IRFS4321TRLPBF vs IRL540NSTRLPBF Сравнение
Подробное сравнение бок о бок IRFS4321TRLPBF от Infineon и IRL540NSTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFS4321TRLPBF | IRL540NSTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,73 | $0,51 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Рабочая температура перехода | -55C to +175C | — |
| Корпус | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | — |
| Статус RoHS | Compliant | Compliant (LPBF suffix indicates lead-free) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Total Gate Charge (Qg) | — | 49.3 nC |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Диапазон рабочих температур | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |