IRFS4321TRLPBF vs IRL540NSTRLPBF Comparison
Detailed side-by-side comparison of IRFS4321TRLPBF by Infineon and IRL540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4321TRLPBF | IRL540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.73 | $0.51 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Tc=25C | 85 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | β |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-to-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) Typ | 71 nC | β |
| Total Gate Charge (Qg) Max | 110 nC | β |
| Power Dissipation (PD) at Tc=25C | 350 W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | 0.45 C/W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | β |
| RoHS Status | Compliant | Compliant (LPBF suffix indicates lead-free) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | β | 44 mΞ© |
| On-Resistance (RDS(on)) max @ VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-Source Voltage (VGS) max | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level |
| Total Gate Charge (Qg) | β | 49.3 nC |
| Power Dissipation (PD) at Tc=25Β°C | β | 140 W |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Operating Temperature Range | β | -55Β°C to +175Β°C |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |