IRFZ48NSTRLPBF vs IRFZ24NPBF Сравнение
Подробное сравнение бок о бок IRFZ48NSTRLPBF от Infineon и IRFZ24NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFZ48NSTRLPBF | IRFZ24NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $0,46 |
| FET Type | N-Channel Power MOSFET | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 54 nC | 13.3 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| Рабочая температура перехода | -55C to +175C | -55C to +175C |
| Корпус | D2PAK (TO-263) Surface Mount | TO-220AB (through hole) |
| Тип монтажа | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel, TRL) | — |
| Lead Finish | Lead-free (PBF) matte tin | — |
| Статус RoHS | Compliant | Compliant |
| Technology Family | HEXFET advanced process technology | — |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Technology | — | HEXFET planar cell |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |