ISZ019N03L5SATMA1 vs ISZ028N03LF2SATMA1 Сравнение
Подробное сравнение бок о бок ISZ019N03L5SATMA1 от Infineon и ISZ028N03LF2SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ АктивенInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISZ019N03L5SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2.35 V |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| Корпус | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (TJ max) | -55C to +175C (junction, typical) |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| FET Type | — | N-Channel |
| Technology | — | StrongIRFET 2 (Trench MOSFET) |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Статус RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |