ISZ019N03L5SATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ019N03L5SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 (<= 40V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| RDS(on) at VGS=10V | 1.9 mΞ© (typical, ID=20A) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2.35 V |
| Gate-Source Voltage Rating (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55C to +175C (junction, typical) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS / REACH | Compliant | β |
| Avalanche Rated | Yes | β |
| RG-tested | 100% | β |
| FET Type | β | N-Channel |
| Technology | β | StrongIRFET 2 (Trench MOSFET) |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| RoHS Status | β | Compliant |
| Avalanche Energy Rated | β | Yes (single-pulse) |