ISZ028N03LF2SATMA1 vs ISC045N03L5SATMA1 Сравнение
Подробное сравнение бок о бок ISZ028N03LF2SATMA1 от Infineon и ISC045N03L5SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ Активен
Сравнение характеристик
| Параметр | ISZ028N03LF2SATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,49 | $0,51 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Корпус | PG-TSDSON-8 FL (FL = flat lead) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (junction, typical) | -55 °C to +150 °C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 13 nC @ VGS=10 V |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | ISC045N03L5SATMA1 |
| Тип транзистора | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |