K6X1008C2D-BF70 vs K6X1008C2D-BF55 Сравнение
Подробное сравнение бок о бок K6X1008C2D-BF70 от Samsung Electronics и K6X1008C2D-BF55 от Samsung Electro-Mechanics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndSamsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteСравнение характеристик
| Параметр | K6X1008C2D-BF70 | K6X1008C2D-BF55 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electro-Mechanics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | NRND | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,28 | $1,18 |
| Тип памяти | Volatile SRAM (asynchronous, static) | Asynchronous CMOS Static RAM (SRAM) |
| Memory Organization | 128K x 8 (1 Mbit total) | 128K x 8 bit (1 Mbit) |
| Number of Words | 131,072 | — |
| Bits per Word | 8 | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | 5 V (single supply) |
| Тип интерфейса | Parallel, asynchronous | — |
| I/O Compatibility | TTL-compatible | — |
| Operating Mode | Fully static (no clock, no refresh) | — |
| Package Type | 32-SOP-525 (PDSO32) | — |
| Speed Grade Suffix | BF70 (= 70 ns) | — |
| Диапазон рабочих температур | [DATA_NEEDED: temperature grade] | — |
| Active Supply Current (ICC) | [DATA_NEEDED: ICC max] | — |
| CMOS Standby Current (ICC2) | [DATA_NEEDED: ICC2 max] | — |
| Output Enable (OE) Pin | Yes (three-state outputs) | — |
| Write Enable (WE) Pin | Yes | — |
| Chip Enable (CE) Pin | Yes | — |
| Lead-Free Finish | Yes (per datasheet revision history) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Process Technology | Low-power CMOS | — |
| Density | — | 1 Mbit |
| Operating Current (ICC) | — | 30 mA typical |
| Standby Current (ICC2) | — | [DATA_NEEDED: standby current value] |
| Интерфейс | — | Parallel, asynchronous |
| Разрядность шины данных | — | 8 bit |
| Address Bus Width | — | 17 bit |
| Корпус | — | 32-SOP-525 (SOP-32) |
| Рабочая температура | — | [DATA_NEEDED: operating temperature grade] |
| Data Retention Voltage | — | Low data retention voltage supported |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes (Lead-Free variant) |
| Статус RoHS | — | Compliant |
| Cell Technology | — | 6T CMOS memory cell |