K9EUGY8S0M-CCK0 vs K9EUGY8S0M-BCK0 Сравнение
Подробное сравнение бок о бок K9EUGY8S0M-CCK0 от Samsung Electronics и K9EUGY8S0M-BCK0 от Samsung Electro-Mechanics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ АктивенСравнение характеристик
| Параметр | K9EUGY8S0M-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electro-Mechanics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory | — |
| Density | [DATA_NEEDED: total device density in Gb] | [DATA_NEEDED: memory density] |
| Cell Type | TLC (3 bits per cell) | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| V-NAND Layers | [DATA_NEEDED: layer count] | — |
| Интерфейс | [DATA_NEEDED: interface type, e.g. Toggle DDR] | — |
| Supply Voltage VCC | [DATA_NEEDED: VCC core supply voltage] | — |
| Supply Voltage VCCQ | [DATA_NEEDED: VCCQ I/O supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Package Type | [DATA_NEEDED: FBGA ball count and dimensions] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Grade Suffix | CCK0 (standard commercial grade) | — |
| Тип монтажа | Surface Mount (BGA) | Surface Mount |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Product Family | — | K9-series V-NAND Flash |
| Тип памяти | — | NAND Flash (non-volatile) |
| Организация памяти | — | [DATA_NEEDED: organization x8/x16] |
| Напряжение питания | — | [DATA_NEEDED: VCC voltage] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Корпус | — | [DATA_NEEDED: package type and dimensions] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |