K9EUGY8S0M-CCK0 vs K9EUGY8S0M-BCK0 Comparaison
Comparaison détaillée côte à côte de K9EUGY8S0M-CCK0 par Samsung Electronics et K9EUGY8S0M-BCK0 par Samsung Electro-Mechanics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9EUGY8S0M-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electro-Mechanics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory | — |
| Density | [DATA_NEEDED: total device density in Gb] | [DATA_NEEDED: memory density] |
| Cell Type | TLC (3 bits per cell) | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| V-NAND Layers | [DATA_NEEDED: layer count] | — |
| Interface | [DATA_NEEDED: interface type, e.g. Toggle DDR] | — |
| Supply Voltage VCC | [DATA_NEEDED: VCC core supply voltage] | — |
| Supply Voltage VCCQ | [DATA_NEEDED: VCCQ I/O supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Package Type | [DATA_NEEDED: FBGA ball count and dimensions] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Grade Suffix | CCK0 (standard commercial grade) | — |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Product Family | — | K9-series V-NAND Flash |
| Type de mémoire | — | NAND Flash (non-volatile) |
| Organisation de la mémoire | — | [DATA_NEEDED: organization x8/x16] |
| Tension d'alimentation | — | [DATA_NEEDED: VCC voltage] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Boîtier | — | [DATA_NEEDED: package type and dimensions] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |