K9KUGY8J7C-BCK0 vs K9NUGY8R6B-BCQ0 Сравнение
Подробное сравнение бок о бок K9KUGY8J7C-BCK0 от Samsung Electronics и K9NUGY8R6B-BCQ0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ АктивенSamsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ АктивенСравнение характеристик
| Параметр | K9KUGY8J7C-BCK0 | K9NUGY8R6B-BCQ0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $9,55 | $0,00 |
| Тип памяти | NAND Flash (TLC V-NAND) | NAND Flash |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Организация памяти | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | — |
| Тип интерфейса | [DATA_NEEDED: toggle DDR / ONFI mode] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: endurance] |
| Package Type | BGA | [DATA_NEEDED: package code] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Рабочая температура | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: temperature range] |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | unknown |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | — | K9NUGY series NAND flash |
| Cell Technology | — | [DATA_NEEDED: SLC/MLC/TLC] |
| Supply Voltage VCC | — | [DATA_NEEDED: VCC range] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ range] |
| Интерфейс | — | Asynchronous NAND I/O (command/address/data multiplexed) |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Data Retention | — | [DATA_NEEDED: retention] |