K9KUGY8J7C-BCK0 vs K9NUGY8R6B-BCQ0 Comparaison
Comparaison détaillée côte à côte de K9KUGY8J7C-BCK0 par Samsung Electronics et K9NUGY8R6B-BCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActifSamsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9KUGY8J7C-BCK0 | K9NUGY8R6B-BCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,55 | $0,00 |
| Type de mémoire | NAND Flash (TLC V-NAND) | NAND Flash |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | — |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI mode] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: endurance] |
| Package Type | BGA | [DATA_NEEDED: package code] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: temperature range] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | unknown |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | — | K9NUGY series NAND flash |
| Cell Technology | — | [DATA_NEEDED: SLC/MLC/TLC] |
| Supply Voltage VCC | — | [DATA_NEEDED: VCC range] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ range] |
| Interface | — | Asynchronous NAND I/O (command/address/data multiplexed) |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Data Retention | — | [DATA_NEEDED: retention] |