K9LCG08U1M vs K9XXG08U0M Сравнение
Подробное сравнение бок о бок K9LCG08U1M от Samsung Electronics и K9XXG08U0M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Flash | Memory ICs |
| Статус жизненного цикла | Активен | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $11,85 | $5,60 |
| Тип памяти | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| Организация памяти | x8 I/O | 1G x 8 bit |
| Интерфейс | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Корпус | BGA | 48-pin TSOP-I |
| Тип монтажа | Surface Mount | Surface Mount |
| Напряжение питания | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Статус RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| Уровень MSL | — | [DATA_NEEDED: moisture sensitivity level] |