K9LCG08U1M vs K9XXG08U0M Vergleich
Detaillierter Direktvergleich von K9LCG08U1M von Samsung Electronics und K9XXG08U0M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $11,85 | $5,60 |
| Speichertyp | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| Speicherorganisation | x8 I/O | 1G x 8 bit |
| Schnittstelle | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Gehäuse | BGA | 48-pin TSOP-I |
| Montageart | Surface Mount | Surface Mount |
| Versorgungsspannung | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |