K9NUGY8R6B-BCQ0 vs K9KUGY8J7C-BCK0 Сравнение
Подробное сравнение бок о бок K9NUGY8R6B-BCQ0 от Samsung Electronics и K9KUGY8J7C-BCK0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ АктивенSamsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ АктивенСравнение характеристик
| Параметр | K9NUGY8R6B-BCQ0 | K9KUGY8J7C-BCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $9,55 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9NUGY series NAND flash | — |
| Тип памяти | NAND Flash | NAND Flash (TLC V-NAND) |
| Density | [DATA_NEEDED: total density] | 1 Tb |
| Cell Technology | [DATA_NEEDED: SLC/MLC/TLC] | — |
| Организация памяти | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Supply Voltage VCC | [DATA_NEEDED: VCC range] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ range] | — |
| Интерфейс | Asynchronous NAND I/O (command/address/data multiplexed) | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size in KB] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E endurance] |
| Data Retention | [DATA_NEEDED: retention] | — |
| Рабочая температура | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range in C] |
| Package Type | [DATA_NEEDED: package code] | BGA |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | unknown | Compliant |
| Cell Type | — | TLC (3 bits/cell) |
| Тип интерфейса | — | [DATA_NEEDED: toggle DDR / ONFI mode] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range in V] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range in V] |
| Package Code | — | [DATA_NEEDED: package code / ball count] |
| Grade Suffix | — | BCK0 |