K9NUGY8R6B-BCQ0 vs K9KUGY8J7C-BCK0 对比

详细并排对比 K9NUGY8R6B-BCQ0 出自 Samsung Electronics 和 K9KUGY8J7C-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9NUGY8R6B-BCQ0 K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 ✓ 量产中
Samsung Electronics
K9KUGY8J7C-BCK0 K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 ✓ 量产中

规格对比

参数 K9NUGY8R6B-BCQ0 K9KUGY8J7C-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.55
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9NUGY series NAND flash —
存储器类型 NAND Flash NAND Flash (TLC V-NAND)
Density [DATA_NEEDED: total density] 1 Tb
Cell Technology [DATA_NEEDED: SLC/MLC/TLC] —
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
Supply Voltage VCC [DATA_NEEDED: VCC range] —
VCCQ Voltage [DATA_NEEDED: VCCQ range] —
接口 Asynchronous NAND I/O (command/address/data multiplexed) —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size in KB]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Page Read Time [DATA_NEEDED: tR] —
Page Program Time [DATA_NEEDED: tPROG] —
Block Erase Time [DATA_NEEDED: tBERS] —
Program/Erase Cycles [DATA_NEEDED: endurance] [DATA_NEEDED: P/E endurance]
Data Retention [DATA_NEEDED: retention] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range in C]
Package Type [DATA_NEEDED: package code] BGA
安装类型 Surface Mount Surface Mount
RoHS 状态 unknown Compliant
Cell Type — TLC (3 bits/cell)
接口类型 — [DATA_NEEDED: toggle DDR / ONFI mode]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range in V]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range in V]
Package Code — [DATA_NEEDED: package code / ball count]
Grade Suffix — BCK0

数据手册与资源

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