K9PRGY8S7M-CCK0 vs K9PKGY8S7M-CCK0 Сравнение
Подробное сравнение бок о бок K9PRGY8S7M-CCK0 от Samsung Electronics и K9PKGY8S7M-CCK0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ Активен
Сравнение характеристик
| Параметр | K9PRGY8S7M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | EEPROM | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $9,40 |
| Тип памяти | NAND Flash | NAND Flash |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Корпус | BGA (surface mount) | BGA |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Lead free / RoHS compliant | Lead free / RoHS compliant |
| Density | [DATA_NEEDED: density] | — |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Напряжение питания | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Интерфейс | [DATA_NEEDED: interface type] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |