K9PRGY8S7M-CCK0 vs K9PKGY8S7M-CCK0 Comparaison
Comparaison détaillée côte à côte de K9PRGY8S7M-CCK0 par Samsung Electronics et K9PKGY8S7M-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ Actif
Comparaison des spécifications
| Paramètre | K9PRGY8S7M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $9,40 |
| Type de mémoire | NAND Flash | NAND Flash |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Boîtier | BGA (surface mount) | BGA |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Lead free / RoHS compliant | Lead free / RoHS compliant |
| Density | [DATA_NEEDED: density] | — |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Tension d'alimentation | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Interface | [DATA_NEEDED: interface type] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |