MRF7S21080HSR3 vs MRF7S21080HR3 Сравнение
Подробное сравнение бок о бок MRF7S21080HSR3 от NXP Semiconductors и MRF7S21080HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP
MRF7S21080HSR3 ✓ Активен
Сравнение характеристик
| Параметр | MRF7S21080HSR3 | MRF7S21080HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $71,50 | $24,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF7S21080HSR3 | — |
| Тип транзистора | Lateral N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral MOSFET, enhancement-mode | RF Power Field Effect Transistor (lateral MOSFET) |
| Operating Frequency | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | 2.11 GHz to 2.17 GHz |
| Drain-Source Voltage (VDS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 800 mA | — |
| Output Power (Average, W-CDMA) | 22 W | — |
| Power Gain | 18 dB | 18 dB |
| Drain Efficiency | 32% | — |
| ACPR at 5 MHz Offset | -38 dBc | — |
| Device Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | 3.84 MHz |
| Корпус | NI-780S (NI-780HS) ceramic-metal sealed | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) |
| Тип монтажа | Surface Mount | Surface Mount / Flange Mount |
| Configuration | Single | — |
| Terminal Form | Flat | — |
| Package Body Material | Ceramic, metal-sealed cofired | — |
| Lead-Free | Yes | — |
| Статус RoHS | Compliant (per NXP product page) | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Rated Drain Voltage | — | 65 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 800 mA |
| Output Power (Avg, W-CDMA) | — | 22 W Avg. |
| Drain Efficiency (typical) | — | 32 % |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Input Signal PAR | — | 7.5 dB at 0.01% CCDF |
| Application | — | CDMA / W-CDMA / LTE base-station power amplifiers |