MRF7S21080HSR3 vs MRF7S21080HR3 Vergleich
Detaillierter Direktvergleich von MRF7S21080HSR3 von NXP Semiconductors und MRF7S21080HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF7S21080HSR3 | MRF7S21080HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $71,50 | $24,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF7S21080HSR3 | — |
| Transistortyp | Lateral N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral MOSFET, enhancement-mode | RF Power Field Effect Transistor (lateral MOSFET) |
| Operating Frequency | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | 2.11 GHz to 2.17 GHz |
| Drain-Source Voltage (VDS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 800 mA | — |
| Output Power (Average, W-CDMA) | 22 W | — |
| Power Gain | 18 dB | 18 dB |
| Drain Efficiency | 32% | — |
| ACPR at 5 MHz Offset | -38 dBc | — |
| Device Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | 3.84 MHz |
| Gehäuse | NI-780S (NI-780HS) ceramic-metal sealed | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) |
| Montageart | Surface Mount | Surface Mount / Flange Mount |
| Configuration | Single | — |
| Terminal Form | Flat | — |
| Package Body Material | Ceramic, metal-sealed cofired | — |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant (per NXP product page) | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Rated Drain Voltage | — | 65 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 800 mA |
| Output Power (Avg, W-CDMA) | — | 22 W Avg. |
| Drain Efficiency (typical) | — | 32 % |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Input Signal PAR | — | 7.5 dB at 0.01% CCDF |
| Application | — | CDMA / W-CDMA / LTE base-station power amplifiers |