MRF8S9102NR3 vs MRFE6S9160HSR3 Сравнение
Подробное сравнение бок о бок MRF8S9102NR3 от NXP Semiconductors и MRFE6S9160HSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MRF8S9102NR3 | MRFE6S9160HSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $24,10 | $55,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF8S9102N / HV8 series | — |
| Тип транзистора | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 920 MHz | 880 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Корпус | OM-780-2 (3-pin ceramic, flange mount) | NI-780S (NI780HS) ceramic, bolted flange |
| Тип монтажа | Chassis / flange mount with bolt-down thermal pad | Through-hole / chassis mount with flange |
| Число выводов | 3 | — |
| Статус RoHS | [DATA_NEEDED: rohs compliance] | [DATA_NEEDED: confirm via latest distributor listing] |
| Operating Mode | Class AB or Class C | — |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Напряжение пробоя сток-исток | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 31% (typical at 35 W avg.) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |