RTAX2000DL-1CQ352V vs RTAX2000DL-CQ352V Сравнение
Подробное сравнение бок о бок RTAX2000DL-1CQ352V от Microchip Technology и RTAX2000DL-CQ352V от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ АктивенMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ АктивенСравнение характеристик
| Параметр | RTAX2000DL-1CQ352V | RTAX2000DL-CQ352V |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2.950,00 | $0,00 |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| Technology | Digital CMOS | CMOS, antifuse (nonvolatile, one-time programmable) |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live-at-power-up (antifuse, no external boot device) |
| Speed Grade | -1 | — |
| Корпус | CQ352 (352-pin ceramic QFP) | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| Тип монтажа | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| Статус RoHS | [DATA_NEEDED: RoHS Status] | — |
| Рабочая температура | [DATA_NEEDED: Operating Temperature] | -55C to +125C |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Terminal Pitch | — | 0.500 mm |