SBRFP2M60SAFQ vs SBRFP3M60SAFQ Сравнение
Подробное сравнение бок о бок SBRFP2M60SAFQ от Diodes Incorporated и SBRFP3M60SAFQ от Diodes Incorporated. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Diodes Incorporated
SBRFP2M60SAFQ - 2A 60V Field-Plated SBR Diode, SMAF | Diodes Inc
SBRFP2M60SAFQ ✓ АктивенDiodes Incorporated
SBRFP3M60SAFQ - 60V 3A SBR Field Plated Rectifier SMAF | Diodes Inc
SBRFP3M60SAFQ ✓ АктивенСравнение характеристик
| Параметр | SBRFP2M60SAFQ | SBRFP3M60SAFQ |
|---|---|---|
| Бренд | Diodes Incorporated | Diodes Incorporated |
| Категория | Diodes | Diodes |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,19 | $0,14 |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Diode Type | Super Barrier Rectifier, Field-Plated (SBR®FP) | — |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Rectified Forward Current (IF(AV)) | 2 A | — |
| Maximum DC Blocking Voltage (VDC) | 60 V | — |
| Forward Voltage (VF) at IF=2A | [DATA_NEEDED: VF at 2A] | — |
| Reverse Leakage Current (IR) at VR=60V | [DATA_NEEDED: IR maximum] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr] | — |
| Диапазон рабочих температур | -55 °C to +150 °C | — |
| Корпус | SMAF | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Single Diode | Single diode, two-terminal |
| Automotive Qualification | AEC-Q101 qualified, PPAP capable | AEC-Q101 qualified, PPAP capable |
| Manufacturing Certification | IATF 16949 certified facilities | — |
| Статус RoHS | Compliant | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Product Series | — | SBR® Field Plated (SBRFP) |
| Device Type | — | Single Rectifier Diode (SBR) |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 60 V |
| Average Rectified Forward Current (I_F(AV)) | — | 3 A |
| Forward Voltage (V_F) at 3 A | — | [DATA_NEEDED: V_F at 3 A typical] |
| Reverse Leakage Current (I_R) | — | [DATA_NEEDED: I_R at V_R typical] |
| Peak Forward Surge Current (I_FSM) | — | [DATA_NEEDED: I_FSM 8.3 ms] |
| Диапазон рабочей температуры перехода | — | -55 °C to +175 °C |
| Storage Temperature Range | — | -55 °C to +175 °C |
| Корпус / Типоразмер | — | SMAF (DO-221AC-like, surface mount) |
| Уровень чувствительности к влаге (MSL) | — | MSL 1 (per JEDEC J-STD-020) |
| Quality Standard | — | Manufactured in IATF 16949 certified facilities |
| RoHS Compliance | — | Compliant |
| Polarity | — | Cathode band marked per SMAF convention |