SBRFP3M60SAFQ - 60V 3A SBR Field Plated Rectifier SMAF | Diodes Inc
Артикул: SBRFP3M60SAFQ ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 10.000 | $0.14 | $1.400,00 |
SBRFP3M60SAFQ Обзор
What is a Super Barrier Rectifier? An SBR is a proprietary second-generation Schottky rectifier structure that uses a MOSFET-like barrier instead of a metal-semiconductor junction. This architecture drops forward voltage (V_F) closer to that of a Schottky diode while keeping reverse leakage far below classic Schottky levels, and it survives automotive surge and avalanche stresses better than a planar Schottky. Within the discrete-semiconductor hierarchy, the SBR sits between standard rectifiers and active OR-ing controllers, and is the preferred passive-rail rectifier in automotive ECU, ADAS, and lighting power trees.
Key specifications include a 60 V repetitive peak reverse voltage (V_RRM), a 3 A average forward current (I_F(AV)), a typical V_F below 0.50 V at 3 A, and ultra-low reverse leakage measured in microamperes at the rated blocking voltage. The device is qualified to AEC-Q101, supports PPAP, and is manufactured in IATF 16949 certified facilities, with a maximum junction temperature of 175 °C and an MSL1 moisture sensitivity rating for robust PCB assembly.
Architecturally, the field-plated termination extends the depletion region across the die surface, suppressing edge leakage that dominates conventional Schottky reverse current. The result is a robust 60 V rating in the SMAF (approximately 3.6 mm × 2.8 mm) package that competes with larger SMA and SMB footprints while preserving a slim profile for dense automotive PCB layouts.
Typical applications include automotive load-dump-protected OR-ing between dual batteries, freewheeling diodes in 12 V/24 V motor and solenoid drivers, polarity protection in body-control modules, and high-efficiency rectification in LED headlamp boost converters. Industrial uses span 24 V bus protection, solar charge controllers, and eMobility auxiliary supplies.
When designing with this part, ensure the PCB land pattern follows the SMAF (DO-221AC-like) footprint and derate I_F using the package's thermal resistance curve above 75 °C ambient. The 60 V rating gives ample margin across 12 V (load-dump up to ~35 V) and 24 V industrial bus environments, but continuous conduction at 3 A into very low V_F loads still requires copper-pour thermal management.
This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical thermal/layout guidance not consolidated on the manufacturer's product brief.
Аналоги без доработки для SBRFP3M60SAFQ — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с SBRFP3M60SAFQ (тот же форм-фактор и посадочное место) — отличается по Automotive Qualification, Configuration, Manufacturing Certification, Package.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
SBRFP3M60SAFQ-13
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SBRFP2M60SAFQ
✅ Прямая замена✓ В наличии
$0.19 / шт.
Открыть даташит →SBRFP8A60P5Q
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SBRFP2M60P1Q
✅ Прямая замена✓ В наличии
$0.26 / шт.
Открыть даташит →SBR3U60P1Q
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
SBRFP3M60SAFQ Максимальные параметры и электрические характеристики
| Manufacturer | Diodes Incorporated |
| Product Series | SBR® Field Plated (SBRFP) |
| Device Type | Single Rectifier Diode (SBR) |
| Repetitive Peak Reverse Voltage (V_RRM) | 60 V |
| Average Rectified Forward Current (I_F(AV)) | 3 A |
| Диапазон рабочей температуры перехода | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C |
| Корпус / Типоразмер | SMAF (DO-221AC-like, surface mount) |
| Тип монтажа | Surface Mount |
| Уровень чувствительности к влаге (MSL) | MSL 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified, PPAP capable |
| Quality Standard | Manufactured in IATF 16949 certified facilities |
| RoHS Compliance | Compliant |
| Configuration | Single diode, two-terminal |
| Polarity | Cathode band marked per SMAF convention |
Конфигурация выводов SBRFP3M60SAFQ
| Контакт 1 | Cathode (K) — Cathode terminal (band-marked) |
| Контакт 2 | Anode (A) — Anode terminal |
Типичное применение
SBRFP3M60SAFQ подходит для 6 применениеs: Automotive ECU Power-Rail Rectification, 12 V / 24 V Solenoid and Motor Freewheeling, OR-ing Between Dual Batteries / Redundant Rails, LED Headlamp Boost-Converter Output Rectifier, Industrial 24 V Bus Polarity Protection, Solar Charge Controller Blocking Diode.
Automotive ECU Power-Rail Rectification
The SBRFP3M60SAFQ provides reverse-battery and reverse-polarity protection between the 12 V automotive bus and ECU power inputs. With its 60 V V_RRM and AEC-Q101 qualification, it survives 12 V load-dump transients up to 35 V while its ultra-low V_F minimizes dissipation at 3 A continuous load. Per the Diodes Incorporated datasheet, the SMAF footprint occupies roughly half the board area of an SMA-package part, allowing denser ECU layouts while keeping junction temperature below the 175 °C maximum.
Рекомендуется
12 V / 24 V Solenoid and Motor Freewheeling
Inductive loads such as solenoids, relays, and small DC motors require freewheeling diodes to clamp back-EMF and protect upstream drivers. The SBRFP3M60SAFQ is rated for 60 V reverse voltage, providing substantial margin above the 24 V bus rail plus inductive overshoot, and its ultra-low reverse leakage keeps blocking-mode loss negligible. According to the datasheet, the 175 °C junction-temperature rating supports underhood and transmission-mounted designs where ambient temperature can exceed 125 °C.
Рекомендуется
OR-ing Between Dual Batteries / Redundant Rails
The SBRFP3M60SAFQ functions as a passive OR-ing rectifier between two redundant supplies such as dual-battery eMobility systems or backup-capacitor banks. Its ultra-low V_F minimizes forward-conduction loss in the main path while the SBR architecture's low reverse leakage prevents back-feeding the depleted source. The 3 A rating suits auxiliary 12 V subsystems and the SMAF footprint allows high-density OR-ing layouts; AEC-Q101 qualification supports safety-critical automotive redundancy paths.
Рекомендуется
LED Headlamp Boost-Converter Output Rectifier
In automotive LED headlamp boost or buck-boost converters, the SBRFP3M60SAFQ can serve as the output rectifier or freewheeling diode. With 60 V reverse-voltage headroom and ultra-low V_F, it improves driver efficiency versus standard Schottky diodes, reducing thermal stress on the LED PCB. The SMAF low-profile package fits behind lamp lenses with strict height constraints; AEC-Q101 / PPAP support is mandatory for headlamp programs requiring automotive change-control documentation.
Рекомендуется
Industrial 24 V Bus Polarity Protection
Industrial 24 V field buses, PLC inputs, and sensor supplies benefit from the SBRFP3M60SAFQ as a polarity-protection rectifier at the connector input. The 60 V rating tolerates 24 V plus typical ±40 V transient bursts, while the 3 A continuous rating supports multi-sensor loads. According to the manufacturer datasheet, the SBRFP architecture's low reverse leakage reduces quiescent loss versus Schottky diodes that would otherwise draw milliamps in blocking mode, which is critical for battery-backed or energy-harvested installations.
Рекомендуется
Solar Charge Controller Blocking Diode
In small solar charge controllers and off-grid renewable systems, the SBRFP3M60SAFQ acts as a blocking diode between the panel and the battery to prevent reverse current at night. Its ultra-low V_F maximizes energy harvest compared to traditional PN-junction rectifiers, while low reverse leakage avoids draining the battery through the panel in low-light conditions. The 60 V reverse rating covers typical 12 V/24 V panel open-circuit voltages with margin, and the SMAF package supports compact IP-rated enclosures.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для SBRFP3M60SAFQ — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | SBRFP3M60SAFQ-13 | SBRFP2M60SAFQ | SBRFP8A60P5Q | SBRFP2M60P1Q | SBR3U60P1Q |
|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package | SMAF | SMAF - same | PowerDI5 (different footprint) | SMAF - same | PowerDI123 (different footprint) | PowerDI123 (different footprint) |
| V_RRM (V) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| I_F(AV) (A) | 3 A | 3 A | 2 A | 8 A | 2 A | 3 A |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| PPAP Capable | Yes | Yes | Yes | Yes | Yes | Yes |
| Architecture | SBR Field Plated (SBRFP) | SBRFP - same | SBRFP - same | SBRFP - same | SBRFP - same | SBR (standard, not field-plated) |
| Operating Junction Temp | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Ключевые отличия
- Ultra-low reverse leakage versus comparable Schottky diodes (против Generic 60 V 3 A SMA-package Schottky (e.g. B360A-series))
- Lower-profile SMAF footprint versus SMA (против Standard SMA-package rectifier)
- Same-family higher-current option available in identical footprint (против SBRFP2M60SAFQ (2 A in PowerDI5))
Заметки по проектированию
Estimated: at I_F = 3 A with V_F ≈ 0.50 V and a PCB copper-pour thermal resistance near 60 °C/W on the SMAF footprint, junction-to-ambient rise is roughly 90 °C above ambient. Keep the SMAF land-pad copper area to at least 100 mm² on the cathode side, and derate I_F using the datasheet's thermal-resistance curve above 75 °C ambient. In sealed automotive housings where ambient reaches 105 °C, expect continuous conduction current below the 3 A rating.
Follow the manufacturer-recommended SMAF land pattern exactly. Per the Diodes Incorporated datasheet, the cathode pad should be the larger copper pour to maximize heat spreading, while the anode pad may be reduced to match the smaller pin. Keep the trace between the diode and the upstream fuse/MOSFET short to limit series inductance during surge events, and use the standard SMAF reflow profile (peak ≤ 260 °C, 30 s above 250 °C).
Do not assume the SBRFP3M60SAFQ is a Schottky diode - the V_F vs I_F curve differs and reverse leakage is far lower than a comparable 60 V Schottky. Avoid paralleling multiple SMAF parts without ballast resistors; the positive temperature coefficient of V_F in SBRFP architecture helps paralleling, but PCB asymmetry can still cause imbalance. For AEC-Q101 programs, always request the PPAP package from the authorized distributor and verify the lot's change-control documentation matches the datasheet revision.
Информация о соответствии
AEC-Q101 qualified (not AEC-Q100 - AEC-Q101 is the discrete-semiconductor automotive standard); PPAP capable; manufactured in IATF 16949 certified facilities per Diodes Incorporated datasheet
