UCC21550BQDWRQ1 vs UCC21550ADWR Сравнение
Подробное сравнение бок о бок UCC21550BQDWRQ1 от Texas Instruments и UCC21550ADWR от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ АктивенTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ АктивенСравнение характеристик
| Параметр | UCC21550BQDWRQ1 | UCC21550ADWR |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,45 | $1,19 |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | 2 (dual) |
| Configuration | Two low-side / two high-side / half-bridge | Dual low-side, dual high-side, or half-bridge |
| Dead Time | Programmable (external resistor) | Programmable |
| Disable Function | Yes | Yes (DISABLE pin) |
| UVLO Threshold | 8 V (driver supply) | — |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | — |
| Корпус | 16-SOIC (DW) | 16-SOIC (DW) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочее напряжение питания | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Driven Devices | — | Power MOSFET, SiC, GaN, IGBT |
| Junction Temperature Range | — | -40C to +150C |
| Статус RoHS | — | Compliant |