UCC21550BQDWRQ1 vs UCC21550ADWR 비교

다음의 상세 나란히 비교: UCC21550BQDWRQ1 제조: Texas Instruments 및 UCC21550ADWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21550ADWR UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR ✓ 활성

사양 비교

파라미터 UCC21550BQDWRQ1 UCC21550ADWR
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $1.19
Driver Type Dual-channel reinforced isolated gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling Reinforced, capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Grade Reinforced isolation —
Number of Channels 2 2 (dual)
Configuration Two low-side / two high-side / half-bridge Dual low-side, dual high-side, or half-bridge
Dead Time Programmable (external resistor) Programmable
Disable Function Yes Yes (DISABLE pin)
UVLO Threshold 8 V (driver supply) —
Target Transistors Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Automotive Qualification AEC-Q100 qualified (Q1) —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
패키지 16-SOIC (DW) 16-SOIC (DW)
실장 유형 Surface Mount Surface Mount
동작 공급 전압 [DATA_NEEDED: VCCI / VDD operating range] —
Common-Mode Transient Immunity [DATA_NEEDED: CMTI value] —
CMTI — > 125 V/ns
Max VDD Output Supply — 25 V
UVLO Threshold Option — 5 V
Driven Devices — Power MOSFET, SiC, GaN, IGBT
Junction Temperature Range — -40C to +150C
RoHS 상태 — Compliant

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