1EDN7511B - 4A/8A Low-Side Gate Driver IC | Infineon
Артикул: 1EDN7511B ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.85 | $8,50 |
| 100 | $0.72 | $72,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.46 | $460,00 |
| 3.000 | $0.38 | $1.140,00 |
1EDN7511B Обзор
A gate driver IC is a specialized power-management semiconductor that sits between a low-current control signal (from a microcontroller, PWM controller, or logic device) and a power transistor's gate. Its primary role is to provide the high peak currents needed to charge and discharge the gate capacitance quickly, minimizing switching losses and dead-time. Within the power-electronics hierarchy, the 1EDN7511B belongs to the gate-driver IC subcategory of power management ICs, with hypernyms: gate driver -> driver IC -> power management IC -> semiconductor device. Synonyms include low-side driver, MOSFET driver, and GaN gate driver.
Key features include a wide 4.5 V to 20 V supply-voltage operating range, two selectable undervoltage lockout (UVLO) thresholds (4.2 V for logic-level MOSFETs/GaN, 8.0 V for normal-level MOSFETs), ±5 ns propagation-delay accuracy between inputs and outputs, 19 ns typical rise/fall times, and an industry-leading reverse-current robustness that eliminates the need for Schottky diodes at the output. The 6-pin SOT-23 footprint with industry-standard pinout enables drop-in PCB layout reuse.
The 1EDN7511B uses a true rail-to-rail CMOS output architecture with matched pull-up (PMOS, 0.85 Ω) and pull-down (NMOS, 0.35 Ω) devices, providing tightly controlled gate-edge symmetry critical for high-frequency half-bridge and synchronous-rectification topologies. The non-inverting + inverting dual-input logic accepts TTL/CMOS-level PWM signals directly, simplifying interface to digital controllers without level-shifters. The integrated UVLO with hysteresis ensures defined startup and prevents partial-drive operation that could overheat the power stage.
Typical applications include server and telecom DC-DC point-of-load converters, industrial SMPS half-bridges, motor-drive gate-driver stages, GaN-based Class-D audio amplifiers, and high-frequency synchronous-rectification circuits. Designers choose this part when they need strong gate drive, tight timing, and minimal external BOM in compact SMD form factors.
Design tip: place the 1EDN7511B within 5 mm of the power-switch gate pad to minimize gate-loop inductance, and use a 1 µF X7R ceramic bypass capacitor directly on the VCC pin to suppress supply ringing during fast dV/dt events.
This page synthesizes distributor pricing, drop-in alternatives from the same Infineon EiceDRIVER family, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для 1EDN7511B — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 1EDN7511B (тот же форм-фактор и посадочное место) — отличается по Package.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
1EDN7512B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1EDN8511BXUSA1
✅ Прямая замена✓ В наличии
$0.54 / шт.
Открыть даташит →1EDN8512B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1EDN7511E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1EDN7511B Максимальные параметры и электрические характеристики
| Driver Type | Single-channel low-side gate driver |
| Number of Channels | 1 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| UVLO Threshold (logic-level variant) | 1.9 V to 2.3 V |
| UVLO Threshold (normal-level variant) | 800 mV to 1.2 V (typ) |
| Propagation Delay | 4.5 ns (typ) |
| Rise Time (typ) | 19 ns |
| Fall Time (typ) | 19 ns |
| Output On-Resistance (pull-up) | 0.85 ohm |
| Output On-Resistance (pull-down) | 0.35 ohm |
| Input Logic | Inverting + Non-inverting |
| Рабочая температура | -40 C to +150 C |
| Корпус | SOT-23-6 (PG-SOT23-6-2) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Supported Switches | MOSFET (OptiMOS, CoolMOS), GaN HEMT |
Конфигурация выводов 1EDN7511B
| Контакт 1 | VCC — Supply voltage (4.5 V to 20 V) |
| Контакт 2 | IN+ — Non-inverting input (CMOS/TTL) |
| Контакт 3 | IN- — Inverting input (CMOS/TTL) |
| Контакт 4 | GND — Ground |
| Контакт 5 | OUT — Gate drive output |
| Контакт 6 | NC — Not connected (per datasheet) |
Типичное применение
1EDN7511B подходит для 6 применениеs: Server/Telecom DC-DC Point-of-Load Converters, Industrial SMPS Half-Bridge Drivers, Motor Drive Gate-Driver Stage, GaN-Based Class-D Audio Amplifiers, Synchronous Rectification in SMPS, USB-PD and Quick-Charge Adapters.
Server/Telecom DC-DC Point-of-Load Converters
The 1EDN7511B drives the low-side MOSFET (or synchronous-rectifier MOSFET) in 48 V-to-POL buck converters used in server and telecom power supplies. Its 4 A/8 A peak output current and sub-5 ns propagation delay minimize switching loss at 500 kHz to 2 MHz switching frequencies, while the rail-to-rail output with 0.35 ohm pull-down resistance ensures fast turn-off even with high gate-charge MOSFETs. The integrated UVLO prevents partial-gate-drive operation that would otherwise overheat the power stage during input-voltage transients. Compared with discrete gate-drive circuits, the 1EDN7511B shrinks the drive-section PCB area by roughly 70% while delivering tighter timing and better EMI performance.
Рекомендуется
Industrial SMPS Half-Bridge Drivers
In isolated half-bridge and full-bridge SMPS topologies for industrial applications, two 1EDN7511B devices drive the low-side MOSFETs of each phase leg. The 4 A source current handles the high gate-charge of 600 V CoolMOS devices efficiently, while the 8 A sink current produces fast turn-off edges critical for reducing body-diode conduction losses. The 4.5 V to 20 V supply range allows the driver to be powered directly from a 12 V bias rail, simplifying the auxiliary supply. The reverse-current robustness eliminates the need for external Schottky diodes at the output, reducing BOM cost and PCB area. Industrial designers appreciate the -40 C to +150 C operating temperature range for harsh-environment deployments.
Рекомендуется
Motor Drive Gate-Driver Stage
The 1EDN7511B serves as the low-side gate driver for small BLDC and stepper motor-drive H-bridges. With 4 A source and 8 A sink drive, it easily handles motor-drive MOSFETs in the 40 V to 100 V class. The dual-input (inverting + non-inverting) logic interface allows direct connection to MCU PWM outputs without external inverters. The wide 4.5 V to 20 V VCC range permits operation directly from a 12 V or 15 V bias, simplifying the auxiliary supply. Designers typically run two 1EDN7511B devices per phase (one per low-side switch) and pair with a high-side driver such as the Infineon 2EDN7524F for full H-bridge capability in compact integrated motor modules.
Рекомендуется
GaN-Based Class-D Audio Amplifiers
GaN HEMT output stages in high-end Class-D audio amplifiers benefit from the 1EDN7511B's 4 A/8 A drive strength and sub-5 ns propagation delay. The fast switching edges (typical 19 ns rise/fall times) reduce switching losses in the GaN output stage, improving amplifier efficiency above 95%. The rail-to-rail output with 0.35 ohm pull-down on-resistance ensures clean dV/dt edges that minimize audio-band EMI. Reverse-current robustness eliminates the external Schottky diode usually required when driving GaN. The small SOT-23-6 footprint supports high-density layouts where the gate driver must sit within 5 mm of the GaN gate pad for optimal switching performance.
Рекомендуется
Synchronous Rectification in SMPS
The 1EDN7511B is well suited for synchronous-rectifier (SR) drive in isolated SMPS forward, half-bridge, and full-bridge converters. Its 8 A sink current produces very fast turn-off of the SR MOSFET, minimizing dead-time and body-diode conduction loss. The wide 4.5 V to 20 V VCC range permits direct supply from a 12 V bias rail. The dual-input (IN+ and IN-) logic accepts either polarity of PWM signal, simplifying interface to digital SR controllers. Compared with diode rectification, this synchronous approach improves efficiency by 3-5% at 100 W load, directly reducing thermal stress on the SR MOSFETs and improving power density.
Рекомендуется
USB-PD and Quick-Charge Adapters
Compact USB-PD and Quick-Charge adapters use the 1EDN7511B to drive the synchronous-rectifier MOSFET on the secondary side of the flyback converter, or the low-side MOSFET in active-clamp topologies. The 4 A/8 A drive current handles small-form-factor GaN and silicon MOSFETs efficiently, while the SOT-23-6 footprint allows the driver to be placed in tight PCB corners. The integrated UVLO and reverse-current robustness simplify compliance with USB-PD fast-transient load steps. The low quiescent current of the driver IC family also helps the adapter meet stringent standby-power regulations such as EU CoC Tier 2 and DOE Level VI.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 1EDN7511B — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 1EDN7512B | 1EDN8511B | 1EDN8512B | 1EDN7511E |
|---|---|---|---|---|---|
| Package | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | WSON-6 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Peak Source Current | 4 A | 4 A | 5 A | 5 A | 4 A |
| Peak Sink Current | 8 A | 8 A | 9 A | 9 A | 8 A |
| Supply Voltage | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| UVLO Threshold | 4.2 V (logic-level) | 8.0 V (normal-level) | 4.2 V (logic-level) | 8.0 V (normal-level) | 4.2 V (logic-level) |
| Propagation Delay | 4.5 ns | 4.5 ns | 4 ns (typ) | 4 ns (typ) | 4.5 ns |
| Operating Temperature | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
Ключевые отличия
- Industry-leading reverse-current robustness (против Generic low-side gate drivers)
- Tight 5 ns propagation-delay accuracy (против 1EDN7512B)
- Compact SOT-23-6 with industry-standard pinout (против TI UCC27517 (different pinout))
Заметки по проектированию
Place the 1EDN7511B within 5 mm of the gate pad of the driven power switch. Keep the gate-drive loop (VCC -> OUT -> gate -> source -> GND) area as small as possible to minimize parasitic inductance. Use a 1 uF X7R ceramic bypass capacitor directly on the VCC pin (pin 1) with the ground return tied to the device GND pin (pin 4) using a short, wide trace. A high dV/dt environment with >5 ns switching edges will couple noise into the supply rail; the bypass capacitor absorbs this charge and prevents false triggering of the input logic. For very high-current applications, add a 100 nF HF bypass in parallel to suppress >100 MHz ringing.
The SOT-23-6 package has limited power dissipation - typically 250 mW to 400 mW at room temperature on a standard 1 oz JEDEC EIA/JESD51 2s2p test board. Estimated: at VCC = 12 V with 1 MHz switching of a 20 nC Qg MOSFET, total gate-drive loss is approximately 240 mW (P = Qg * Vgs * fsw). Ensure PCB copper area beneath the exposed lead frame is maximized, and consider thermal vias to inner planes if operating near 150 C junction. For continuous high-frequency operation above 2 MHz, verify junction temperature with the actual PCB thermal resistance rather than relying on the JEDEC value.
The 1EDN7511B input logic thresholds are TTL/CMOS-compatible. Use the IN+ pin for non-inverting PWM and tie IN- to VCC, or use IN- for inverting PWM and tie IN+ to GND. Do not leave either input floating - unused inputs may drift into the threshold region and cause high-frequency oscillation. For differential PWM signaling, both inputs can be driven with complementary signals. When driving from a long PCB trace or shielded cable, add a 100 kohm pull-down to GND on IN- and a 100 kohm pull-up to VCC on IN+ to define a default state and prevent spurious drive during controller startup.
Информация о соответствии
RoHS compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified - this part targets industrial and consumer applications; for automotive use consult the Infineon automotive-grade gate driver portfolio.
