1EDN7511B - 4A/8A Low-Side Gate Driver IC | Infineon
MPN: 1EDN7511B ✓ فعال1EDN7511B جائزہ
A gate driver IC is a specialized power-management semiconductor that sits between a low-current control signal (from a microcontroller, PWM controller, or logic device) and a power transistor's gate. Its primary role is to provide the high peak currents needed to charge and discharge the gate capacitance quickly, minimizing switching losses and dead-time. Within the power-electronics hierarchy, the 1EDN7511B belongs to the gate-driver IC subcategory of power management ICs, with hypernyms: gate driver -> driver IC -> power management IC -> semiconductor device. Synonyms include low-side driver, MOSFET driver, and GaN gate driver.
Key features include a wide 4.5 V to 20 V supply-voltage operating range, two selectable undervoltage lockout (UVLO) thresholds (4.2 V for logic-level MOSFETs/GaN, 8.0 V for normal-level MOSFETs), ±5 ns propagation-delay accuracy between inputs and outputs, 19 ns typical rise/fall times, and an industry-leading reverse-current robustness that eliminates the need for Schottky diodes at the output. The 6-pin SOT-23 footprint with industry-standard pinout enables drop-in PCB layout reuse.
The 1EDN7511B uses a true rail-to-rail CMOS output architecture with matched pull-up (PMOS, 0.85 Ω) and pull-down (NMOS, 0.35 Ω) devices, providing tightly controlled gate-edge symmetry critical for high-frequency half-bridge and synchronous-rectification topologies. The non-inverting + inverting dual-input logic accepts TTL/CMOS-level PWM signals directly, simplifying interface to digital controllers without level-shifters. The integrated UVLO with hysteresis ensures defined startup and prevents partial-drive operation that could overheat the power stage.
Typical applications include server and telecom DC-DC point-of-load converters, industrial SMPS half-bridges, motor-drive gate-driver stages, GaN-based Class-D audio amplifiers, and high-frequency synchronous-rectification circuits. Designers choose this part when they need strong gate drive, tight timing, and minimal external BOM in compact SMD form factors.
Design tip: place the 1EDN7511B within 5 mm of the power-switch gate pad to minimize gate-loop inductance, and use a 1 µF X7R ceramic bypass capacitor directly on the VCC pin to suppress supply ringing during fast dV/dt events.
This page synthesizes distributor pricing, drop-in alternatives from the same Infineon EiceDRIVER family, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل 1EDN7511B — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 1EDN7511B (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package.
1EDN7512B
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
1EDN8511BXUSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN8512B
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
1EDN7511E
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
1EDN7511B زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Driver Type | Single-channel low-side gate driver |
| Number of Channels | 1 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| UVLO Threshold (logic-level variant) | 1.9 V to 2.3 V |
| UVLO Threshold (normal-level variant) | 800 mV to 1.2 V (typ) |
| Propagation Delay | 4.5 ns (typ) |
| Rise Time (typ) | 19 ns |
| Fall Time (typ) | 19 ns |
| Output On-Resistance (pull-up) | 0.85 ohm |
| Output On-Resistance (pull-down) | 0.35 ohm |
| Input Logic | Inverting + Non-inverting |
| آپریٹنگ درجہ حرارت | -40 C to +150 C |
| پیکیج | SOT-23-6 (PG-SOT23-6-2) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| Supported Switches | MOSFET (OptiMOS, CoolMOS), GaN HEMT |
1EDN7511B پن کنفیگریشن
| پن 1 | VCC — Supply voltage (4.5 V to 20 V) |
| پن 2 | IN+ — Non-inverting input (CMOS/TTL) |
| پن 3 | IN- — Inverting input (CMOS/TTL) |
| پن 4 | GND — Ground |
| پن 5 | OUT — Gate drive output |
| پن 6 | NC — Not connected (per datasheet) |
عام استعمالات
1EDN7511B کے لیے موزوں ہے 6 ایپلیکیشنs: Server/Telecom DC-DC Point-of-Load Converters, Industrial SMPS Half-Bridge Drivers, Motor Drive Gate-Driver Stage, GaN-Based Class-D Audio Amplifiers, Synchronous Rectification in SMPS, USB-PD and Quick-Charge Adapters.
Server/Telecom DC-DC Point-of-Load Converters
The 1EDN7511B drives the low-side MOSFET (or synchronous-rectifier MOSFET) in 48 V-to-POL buck converters used in server and telecom power supplies. Its 4 A/8 A peak output current and sub-5 ns propagation delay minimize switching loss at 500 kHz to 2 MHz switching frequencies, while the rail-to-rail output with 0.35 ohm pull-down resistance ensures fast turn-off even with high gate-charge MOSFETs. The integrated UVLO prevents partial-gate-drive operation that would otherwise overheat the power stage during input-voltage transients. Compared with discrete gate-drive circuits, the 1EDN7511B shrinks the drive-section PCB area by roughly 70% while delivering tighter timing and better EMI performance.
تجویز کردہ
Industrial SMPS Half-Bridge Drivers
In isolated half-bridge and full-bridge SMPS topologies for industrial applications, two 1EDN7511B devices drive the low-side MOSFETs of each phase leg. The 4 A source current handles the high gate-charge of 600 V CoolMOS devices efficiently, while the 8 A sink current produces fast turn-off edges critical for reducing body-diode conduction losses. The 4.5 V to 20 V supply range allows the driver to be powered directly from a 12 V bias rail, simplifying the auxiliary supply. The reverse-current robustness eliminates the need for external Schottky diodes at the output, reducing BOM cost and PCB area. Industrial designers appreciate the -40 C to +150 C operating temperature range for harsh-environment deployments.
تجویز کردہ
Motor Drive Gate-Driver Stage
The 1EDN7511B serves as the low-side gate driver for small BLDC and stepper motor-drive H-bridges. With 4 A source and 8 A sink drive, it easily handles motor-drive MOSFETs in the 40 V to 100 V class. The dual-input (inverting + non-inverting) logic interface allows direct connection to MCU PWM outputs without external inverters. The wide 4.5 V to 20 V VCC range permits operation directly from a 12 V or 15 V bias, simplifying the auxiliary supply. Designers typically run two 1EDN7511B devices per phase (one per low-side switch) and pair with a high-side driver such as the Infineon 2EDN7524F for full H-bridge capability in compact integrated motor modules.
تجویز کردہ
GaN-Based Class-D Audio Amplifiers
GaN HEMT output stages in high-end Class-D audio amplifiers benefit from the 1EDN7511B's 4 A/8 A drive strength and sub-5 ns propagation delay. The fast switching edges (typical 19 ns rise/fall times) reduce switching losses in the GaN output stage, improving amplifier efficiency above 95%. The rail-to-rail output with 0.35 ohm pull-down on-resistance ensures clean dV/dt edges that minimize audio-band EMI. Reverse-current robustness eliminates the external Schottky diode usually required when driving GaN. The small SOT-23-6 footprint supports high-density layouts where the gate driver must sit within 5 mm of the GaN gate pad for optimal switching performance.
تجویز کردہ
Synchronous Rectification in SMPS
The 1EDN7511B is well suited for synchronous-rectifier (SR) drive in isolated SMPS forward, half-bridge, and full-bridge converters. Its 8 A sink current produces very fast turn-off of the SR MOSFET, minimizing dead-time and body-diode conduction loss. The wide 4.5 V to 20 V VCC range permits direct supply from a 12 V bias rail. The dual-input (IN+ and IN-) logic accepts either polarity of PWM signal, simplifying interface to digital SR controllers. Compared with diode rectification, this synchronous approach improves efficiency by 3-5% at 100 W load, directly reducing thermal stress on the SR MOSFETs and improving power density.
تجویز کردہ
USB-PD and Quick-Charge Adapters
Compact USB-PD and Quick-Charge adapters use the 1EDN7511B to drive the synchronous-rectifier MOSFET on the secondary side of the flyback converter, or the low-side MOSFET in active-clamp topologies. The 4 A/8 A drive current handles small-form-factor GaN and silicon MOSFETs efficiently, while the SOT-23-6 footprint allows the driver to be placed in tight PCB corners. The integrated UVLO and reverse-current robustness simplify compliance with USB-PD fast-transient load steps. The low quiescent current of the driver IC family also helps the adapter meet stringent standby-power regulations such as EU CoC Tier 2 and DOE Level VI.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 1EDN7511B — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 1EDN7512B | 1EDN8511B | 1EDN8512B | 1EDN7511E |
|---|---|---|---|---|---|
| Package | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | SOT-23-6 (PG-SOT23-6-2) | WSON-6 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Peak Source Current | 4 A | 4 A | 5 A | 5 A | 4 A |
| Peak Sink Current | 8 A | 8 A | 9 A | 9 A | 8 A |
| Supply Voltage | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| UVLO Threshold | 4.2 V (logic-level) | 8.0 V (normal-level) | 4.2 V (logic-level) | 8.0 V (normal-level) | 4.2 V (logic-level) |
| Propagation Delay | 4.5 ns | 4.5 ns | 4 ns (typ) | 4 ns (typ) | 4.5 ns |
| Operating Temperature | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
اہم امتیازی خصوصیات
- Industry-leading reverse-current robustness (بمقابلہGeneric low-side gate drivers)
- Tight 5 ns propagation-delay accuracy (بمقابلہ1EDN7512B)
- Compact SOT-23-6 with industry-standard pinout (بمقابلہTI UCC27517 (different pinout))
ڈیزائن نوٹس
Place the 1EDN7511B within 5 mm of the gate pad of the driven power switch. Keep the gate-drive loop (VCC -> OUT -> gate -> source -> GND) area as small as possible to minimize parasitic inductance. Use a 1 uF X7R ceramic bypass capacitor directly on the VCC pin (pin 1) with the ground return tied to the device GND pin (pin 4) using a short, wide trace. A high dV/dt environment with >5 ns switching edges will couple noise into the supply rail; the bypass capacitor absorbs this charge and prevents false triggering of the input logic. For very high-current applications, add a 100 nF HF bypass in parallel to suppress >100 MHz ringing.
The SOT-23-6 package has limited power dissipation - typically 250 mW to 400 mW at room temperature on a standard 1 oz JEDEC EIA/JESD51 2s2p test board. Estimated: at VCC = 12 V with 1 MHz switching of a 20 nC Qg MOSFET, total gate-drive loss is approximately 240 mW (P = Qg * Vgs * fsw). Ensure PCB copper area beneath the exposed lead frame is maximized, and consider thermal vias to inner planes if operating near 150 C junction. For continuous high-frequency operation above 2 MHz, verify junction temperature with the actual PCB thermal resistance rather than relying on the JEDEC value.
The 1EDN7511B input logic thresholds are TTL/CMOS-compatible. Use the IN+ pin for non-inverting PWM and tie IN- to VCC, or use IN- for inverting PWM and tie IN+ to GND. Do not leave either input floating - unused inputs may drift into the threshold region and cause high-frequency oscillation. For differential PWM signaling, both inputs can be driven with complementary signals. When driving from a long PCB trace or shielded cable, add a 100 kohm pull-down to GND on IN- and a 100 kohm pull-up to VCC on IN+ to define a default state and prevent spurious drive during controller startup.
تعمیل کی معلومات
RoHS compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified - this part targets industrial and consumer applications; for automotive use consult the Infineon automotive-grade gate driver portfolio.
