2N7000TA - 60V 200mA N-Channel Small-Signal MOSFET | onsemi
Артикул: 2N7000TA ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.34 | $3,40 |
| 100 | $0.22 | $22,00 |
| 500 | $0.15 | $75,00 |
| 1.000 | $0.11 | $110,00 |
| 3.000 | $0.08 | $240,00 |
2N7000TA Обзор
A small-signal MOSFET is a low-power field-effect transistor designed primarily for switching and amplification of analog or digital signals below roughly 1 A, rather than for power conversion. In the broader taxonomy, the 2N7000TA sits within discrete semiconductors -> MOSFETs -> small-signal MOSFETs -> N-channel enhancement-mode MOSFETs. Its standard JEDEC registration as "2N7000" reflects decades of cross-vendor second-source availability.
Key features include a typical on-resistance of approximately 5 ohm at VGS = 10 V (per the onsemi datasheet), a gate threshold voltage VGS(th) typically 1.7 V (min 0.8 V, max 3 V), and fast switching times suitable for low-side switching of relays, LEDs, and small motors. The DMOS process minimises conduction loss while preserving ruggedness and switching speed, and the device is RoHS compliant in lead-free TO-92 form.
From an architectural standpoint, the 2N7000TA uses a vertical DMOS cell layout that achieves low specific on-resistance per unit silicon area relative to older planar MOSFET processes. The result is a single-device solution that delivers low gate charge and low input capacitance for fast edges, even when driven directly from a 5 V microcontroller GPIO.
Typical applications include microcontroller GPIO low-side switching of relays and solenoids, level shifters, LED drivers and indicators, signal gating and multiplexing, hobbyist robotics, and small DC motor speed control. The 200 mA continuous rating covers the vast majority of 5 V logic-level interfaces. The TO-92 package is breadboard-friendly and hand-solderable.
When designing with this part, note that continuous DC drain current is limited to 200 mA at TC; at 25 C ambient with no heatsink, derate to roughly 115 mA continuous. For higher currents, use the SMD cousin 2N7002 (SOT-23) or upgrade to a logic-level power MOSFET such as AO3400.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes that are not consolidated in any single manufacturer datasheet, making it faster to choose, source, and design in the 2N7000TA.
Аналоги без доработки для 2N7000TA — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
2N7000BU
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BS170
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VN10KM
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BS170
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
2N7000
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BS170
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
2N7000TA Максимальные параметры и электрические характеристики
| Тип транзистора | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 200 mA (at TC) |
| Power Dissipation (PD) | 400 mW (Ta) |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 3 V (typ 1.7 V) |
| On-Resistance (RDS(on)) | approx. 5 ohm at VGS = 10 V (typ) |
| Switching Speed | Fast switching (DMOS technology) |
| Диапазон рабочих температур | -55 C to +150 C (junction) |
| Корпус / Типоразмер | TO-92-3 (Through Hole) |
| Тип монтажа | Through Hole |
| Pin Configuration | Pin 1: Source, Pin 2: Gate, Pin 3: Drain (EBC style A1) |
| Lead-Free / RoHS | Lead-free, RoHS compliant |
| Process Technology | High cell-density DMOS |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) |
Конфигурация выводов 2N7000TA
| Контакт 1 | Source — MOSFET source terminal (connected to GND in low-side switch configuration) |
| Контакт 2 | Gate — MOSFET gate terminal (driven by logic-level control signal) |
| Контакт 3 | Drain — MOSFET drain terminal (connected to the load in low-side switch configuration) |
Типичное применение
2N7000TA подходит для 6 применениеs: Microcontroller Low-Side Switching, Relay and Solenoid Drivers, LED Drivers and PWM Dimming, Logic Level Shifters, Signal Gating and Multiplexing, Hobbyist and Educational Electronics.
Microcontroller Low-Side Switching
The 2N7000TA's 60 V VDS, 200 mA continuous ID, and guaranteed VGS(th) of 3 V max make it a textbook low-side switch for 3.3 V and 5 V microcontroller GPIO outputs. With VGS(th) typically 1.7 V, the device fully turns on from a 3.3 V STM32 or ESP32 output. In a typical circuit, drain connects to the relay/LED/buzzer negative terminal, source to GND, and gate to the GPIO through a 100 ohm series resistor for inrush control. RDS(on) of approximately 5 ohm at 10 V drive dissipates roughly 0.2 W at 200 mA - well within the 400 mW TO-92 envelope. Compared to a BJT like 2N2222, the 2N7000TA requires no base current, freeing the GPIO for other tasks.
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Relay and Solenoid Drivers
The 2N7000TA is widely used to switch small 5 V and 12 V signal relays, latching solenoids, and small DC valves in industrial control boards. The 60 V rating comfortably covers 12 V and 24 V inductive loads with a flyback diode across the coil. Add a 1N4148 reverse-biased across the coil (cathode to +V, anode to drain) to clamp the turn-off transient to roughly +V plus one diode drop. Drain current of 200 mA continuous covers most signal relays (typically 30-70 mA coil current). For >500 mA inductive loads, upgrade to a logic-level power MOSFET such as AO3400 (SOT-23) or IRLZ44N (TO-220).
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LED Drivers and PWM Dimming
The 2N7000TA efficiently drives LED strings, segment displays, and indicator lamps from a microcontroller. A common circuit places the LED anode at +5 V through a current-limit resistor, cathode at the drain, source at GND, and gate at the PWM GPIO. With VGS(th) of 3 V max and full turn-on at 10 V, the 2N7000TA delivers clean PWM edges at up to 10 kHz with no visible flicker. RDS(on) of approximately 5 ohm drops only 1 V at 200 mA, giving reasonable efficiency for low-power LEDs. Compared to bipolar drivers, the MOSFET's voltage-driven gate means no continuous base current and no thermal runaway.
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Logic Level Shifters
The 2N7000TA is used in simple low-side level-shifting and logic inversion circuits, particularly for shifting 3.3 V microcontroller signals up to 5 V loads. The classic configuration connects drain to +5 V via a 10 kohm pull-up, source to GND, and gate to the 3.3 V GPIO. Driving the gate LOW turns the MOSFET off and the drain rises to +5 V (logic high); driving the gate HIGH turns the MOSFET on and the drain falls to ~0 V (logic low). This circuit inverts logic and provides a clean 5 V output capable of driving CMOS or TTL inputs at up to tens of kHz. It is cheaper and faster than a dedicated level-shifter IC for unidirectional signals.
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Signal Gating and Multiplexing
In test equipment and analog signal-path designs, the 2N7000TA acts as a low-leakage analog switch or signal gate for signals up to tens of kHz. Its high off-state impedance (>10 Mohm) and low on-resistance (~5 ohm) make it suitable for routing low-level analog signals in educational lab kits and hobbyist instruments. A common configuration places the 2N7000TA in series with a signal path, with gate driven by a logic-level control line. For RF or precision audio applications where charge injection and capacitance matter, prefer a dedicated analog switch IC such as the 74HC4066 or MAX3219.
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Hobbyist and Educational Electronics
The 2N7000TA is a staple of hobbyist electronics, Arduino and Raspberry Pi tutorials, and university electronics labs because of its breadboard-friendly TO-92 package and forgiving 60 V / 200 mA ratings. Common projects include driving small DC motors, controlling high-brightness LEDs, building electronic dice, audio mixers, and interfacing vintage logic families. The TO-92 package hand-solders easily and the standard S-G-D pinout is well-documented. Many open-source hardware designs on Arduino Project Hub, Hackaday, and Adafruit use the 2N7000 as the canonical introductory MOSFET. Its five-decade production history and cross-vendor second-sourcing make it nearly impossible to obsolete.
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Сводка рекомендуемых товаров
Справочные инженерные данные для 2N7000TA — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 2N7000BU | BS170 | VN10KM | BS170 (Vishay) | 2N7000 (Fairchild/onsemi) | BS170 (Diodes Incorporated) |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Vishay Intertechnology | onsemi | Diodes Incorporated |
| Package | TO-92-3 | TO-92-3 (same) | TO-92-3 (same) | TO-92-3 (same) | TO-92-3 (same) | TO-92-3 (same) | TO-92-3 (same) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID) | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 3 V (typ 1.7 V) | 0.8 V to 3 V (typ 1.7 V) | 0.8 V to 3 V (typ 1.7 V) | 0.8 V to 2.5 V | 0.8 V to 3 V (typ 1.7 V) | 0.8 V to 3 V (typ 1.7 V) | 0.8 V to 3 V (typ 1.7 V) |
| On-Resistance (RDS(on)) at 10 V | approx. 5 ohm | approx. 5 ohm | approx. 5 ohm | approx. 7.5 ohm | approx. 5 ohm | approx. 5 ohm | approx. 5 ohm |
| Pinout | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) | S-G-D (TO-92 A1) |
| Process Technology | DMOS (high cell density) | DMOS | DMOS | VMOS | DMOS | DMOS | DMOS |
| Lead-Free / RoHS | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1000) | $0.11 | $0.10 (slightly cheaper bulk pack) | $0.10 | $0.18 | $0.12 | $0.10 | $0.10 |
Ключевые отличия
- JEDEC-registered base part with multi-vendor second-sourcing (против BS170)
- Higher typical on-resistance at 10 V gate drive (против VN10KM)
- Tape-and-Ammo packing vs bulk pack (против 2N7000BU)
Заметки по проектированию
The TO-92-3 package has a thermal resistance junction-to-ambient (theta_JA) of approximately 200 C/W when mounted on a small PCB pad with no heatsink. At 200 mA continuous drain current and a worst-case RDS(on) of 10 ohm, the device would dissipate roughly 0.4 W - close to the 400 mW absolute maximum. Estimated: a 25 C ambient would push the junction to approximately 105 C, which is within the 150 C rating but leaves only 45 C margin. For sustained 200 mA operation, use a copper pour (>= 100 sq mm) under the TO-92 leads or reduce load current to 115 mA continuous.
Do not assume the 2N7000TA is fully enhanced at 3.3 V VGS. While VGS(th) is guaranteed <= 3 V (so the device will turn on), the on-resistance at 3.3 V gate drive can be 2-3x higher than at 10 V, leading to excessive voltage drop and heat. For switching loads above 100 mA from a 3.3 V GPIO, use a true logic-level MOSFET (RDS(on) specified at 2.5 V or 4.5 V VGS) such as Si2302 (SOT-23) or AO3400A. Always add a 100 ohm gate resistor to limit inrush current and dampen LC ringing in long gate traces.
When driving inductive loads (relays, solenoids, motors) with the 2N7000TA, always add a flyback diode (1N4148 or 1N4007) reverse-biased across the coil. Connect cathode to the higher-voltage end and anode to the drain. This clamps the turn-off inductive kick to one diode drop above the supply rail and protects the MOSFET from drain-voltage transients that can otherwise exceed the 60 V VDS rating. For maximum robustness, add a TVS diode such as P6KE36A across the drain-source junction for 24 V supply rails.
Информация о соответствии
RoHS compliant per onsemi datasheet. TO-92-3 lead-free package uses matte-tin finish. AEC-Q100 not applicable - this is a through-hole through-hole general-purpose part, not automotive qualified. Choose AEC-Q100 qualified logic-level MOSFETs (e.g. NVMFS5C460N) for automotive applications.
