ATSAMD21E15L-MNT - 48MHz Cortex-M0+ MCU, 32KB Flash, 32-VQFN | Microchip
Артикул: ATSAMD21E15L-MNT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.66 | $26,60 |
| 100 | $2.37 | $237,00 |
| 500 | $2.08 | $1.040,00 |
| 1.000 | $1.85 | $1.850,00 |
| 3.000 | $1.62 | $4.860,00 |
ATSAMD21E15L-MNT Обзор
What is a Cortex-M0+ microcontroller? A microcontroller is a single-chip computer that integrates a CPU core, program Flash, data SRAM, and a rich set of peripherals (timers, ADC, communication interfaces, GPIO) onto one silicon die. The ARM Cortex-M0+ is the smallest and most energy-efficient member of the ARMv6-M architecture family, designed for deterministic embedded control in cost- and power-sensitive applications. Cortex-M0+ MCUs sit within the hierarchy: microcontroller -> embedded MCU -> ARM-based MCU -> Cortex-M class -> Cortex-M0+ sub-class -> semiconductor IC. The SAM D21 family extends the basic Cortex-M0+ with Microchip's SERCOM (serial communication) peripheral set and advanced analog such as 12-bit ADC, DAC, and analog comparators.
Key features of the ATSAMD21E15L-MNT include a 1.6 V to 3.6 V supply voltage range, an internal 48 MHz oscillator (with PLL), full-speed USB 2.0 device support on select SAM D21 pins, and a powerful 12-channel event system that lets peripherals trigger each other without CPU intervention. The device is supported by the Atmel/Microchip Studio IDE and the MPLAB X IDE ecosystem, with code reuse across the SAM D20/D21 family through the ASF and Harmony 3 frameworks. Native 1.6 V operation allows direct connection to a single Li-ion cell or two AA cells without an external LDO, simplifying the BOM for battery-powered designs.
Typical applications include low-power IoT sensor nodes, LED lighting control, brushed DC and stepper motor control (via the on-chip PWM timers and TCC counter/timer capture blocks), consumer Human-Interface Devices (HID) such as keyboards and mice, and industrial control daughter boards. The combination of a Cortex-M0+ core, deep-sleep currents in the microamp range, and a rich peripheral set makes the part particularly attractive for battery-powered and USB-powered products.
When designing with this device, note that the 'L' in the part number denotes the 105 C industrial temperature grade, while the 'MNT' suffix denotes 32-VQFN (5x5 mm) with Tape-and-Reel packaging. Pin assignment must be cross-checked against the SAM D21 family datasheet pinout table, since identical SAM D21E die is offered in QFN, QFP and WLCSP variants. Decoupling into NMOS-capable rails should include 100 nF + 4.7 uF near VDDIN, plus a bulk capacitor on VDDANA when the analog peripherals are active.
This page synthesizes distributor pricing, drop-in same-family alternatives, and design notes not always surfaced on the manufacturer product page.
Аналоги без доработки для ATSAMD21E15L-MNT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с ATSAMD21E15L-MNT (тот же форм-фактор и посадочное место) — отличается по Operating Temperature, Package, RoHS Status, ADC, Core Architecture.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ATSAMD21E15L-MFT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ATSAMD21E15L-MFN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ATSAMD21E15L-MF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ATSAMD21E16L-MNT
✅ Прямая замена✓ В наличии
$1.78 / шт.
Открыть даташит →ATSAMD21E15B-AU
✅ Прямая замена✓ В наличии
$1.45 / шт.
Открыть даташит →ATSAMD21E15L-MNT Максимальные параметры и электрические характеристики
| Core Architecture | ARM Cortex-M0+ (SAM D21E family) |
| CPU Bit Width | 32-bit |
| Maximum CPU Frequency | 48 MHz |
| Program Flash Memory | 32 KB (32K x 8) |
| Data SRAM | 4 KB |
| Supply Voltage (VDDIN) | 1.6 V to 3.6 V |
| Рабочая температура | -40 C to +105 C (industrial, 'L' suffix) |
| Корпус | 32-VQFN (5x5 mm) |
| Packaging Form | Tape and Reel ('NT' suffix) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant (Green, Pb-free per Mouser description) |
| GPIO Count | Up to 26 (per SAM D21E family datasheet) |
| Functional Safety Standards | ISO 26262 (ASIL B), IEC 61508 (SIL 2), IEC 60730 (Class B) capable |
Конфигурация выводов ATSAMD21E15L-MNT
| Контакт 1 | PA00 — GPIO / XIN32 (external 32.768 kHz crystal input) |
| Контакт 2 | PA01 — GPIO / XOUT32 (external 32.768 kHz crystal output) |
| Контакт 3 | PA02 — GPIO / AIN[0] (ADC analog input) |
| Контакт 4 | PA03 — GPIO / AIN[1] / VREFA (ADC reference) |
| Контакт 5 | GND — Ground |
| Контакт 6 | VDDANA — Analog supply voltage (1.6 V to 3.6 V) |
| Контакт 7 | PB08 — GPIO / SERCOM4 PAD[0] |
| Контакт 8 | PB09 — GPIO / SERCOM4 PAD[1] |
| Контакт 9 | PA04 — GPIO / AIN[2] / VREFB |
| Контакт 10 | PA05 — GPIO / AIN[3] |
| Контакт 11 | PA06 — GPIO / AIN[4] |
| Контакт 12 | PA07 — GPIO / AIN[5] |
| Контакт 13 | PA08 — GPIO / SERCOM0 PAD[0] / I2S SD |
| Контакт 14 | PA09 — GPIO / SERCOM0 PAD[1] / I2S MCK |
| Контакт 15 | PA10 — GPIO / SERCOM0 PAD[2] |
| Контакт 16 | PA11 — GPIO / SERCOM0 PAD[3] |
| Контакт 17 | VDDIN — Digital supply voltage (1.6 V to 3.6 V) |
| Контакт 18 | GND — Ground |
| Контакт 19 | PB10 — GPIO / SERCOM4 PAD[2] |
| Контакт 20 | PB11 — GPIO / SERCOM4 PAD[3] |
| Контакт 21 | PA12 — GPIO / SERCOM2 PAD[0] / I2S FS |
| Контакт 22 | PA13 — GPIO / SERCOM2 PAD[1] / I2S SCK |
| Контакт 23 | PA14 — GPIO / SERCOM2 PAD[2] / XCLK |
| Контакт 24 | PA15 — GPIO / SERCOM2 PAD[3] |
| Контакт 25 | PA16 — GPIO / SERCOM1 PAD[0] / I2C SDA |
| Контакт 26 | PA17 — GPIO / SERCOM1 PAD[1] / I2C SCL |
| Контакт 27 | PA18 — GPIO / SERCOM1 PAD[2] |
| Контакт 28 | PA19 — GPIO / SERCOM1 PAD[3] |
| Контакт 29 | PA20 — GPIO / SERCOM3 PAD[2] |
| Контакт 30 | PA21 — GPIO / SERCOM3 PAD[3] |
| Контакт 31 | PA22 — GPIO / SERCOM3 PAD[0] / SWDIO |
| Контакт 32 | PA23 — GPIO / SERCOM3 PAD[1] / SWCLK |
Типичное применение
ATSAMD21E15L-MNT подходит для 6 применениеs: Low-Power IoT Sensor Nodes, LED Lighting Control, Brushed DC and Stepper Motor Control, USB Human Interface Devices (HID), Industrial Control Daughter Boards, Battery-Powered Wearable Devices.
Low-Power IoT Sensor Nodes
The ATSAMD21E15L-MNT is well suited for battery-powered IoT sensor nodes. Its ARM Cortex-M0+ core at 48 MHz delivers enough MIPS for sensor-fusion algorithms while the SAM D21E deep-sleep modes (down to a few microamps with RTC running) extend coin-cell or Li-ion battery life to months or years. With 32 KB of Flash and 4 KB of SRAM, the part hosts a small RTOS or bare-metal LoRaWAN/BLE HCI bridge, while the six SERCOM instances map flexibly to UART/SPI/I2C sensor buses. The 1.6 V to 3.6 V supply directly accepts a single Li-ion cell. Designers typically pair this MCU with a sub-GHz or BLE module and a low-power sensor (temperature, accelerometer, or environmental). Estimated: at 0.1% duty cycle with periodic wake-and-transmit, average current stays under 50 uA, so a 1200 mAh Li-ion cell lasts roughly 2-3 years.
Рекомендуется
LED Lighting Control
The ATSAMD21E15L-MNT drives multi-channel LED lighting strips and fixtures via its on-chip Timer/Counter (TCC) peripherals. The TCC supports complementary PWM outputs with dead-time insertion, which is critical for half-bridge LED driver topologies. With 32 KB Flash and 4 KB SRAM, designers implement lighting effects, DMX512 or DALI protocol stacks, and color-mixing firmware directly on-chip. The 1.6 V minimum supply allows direct operation from a 2-cell NiMH battery pack. Up to 26 GPIO let one MCU drive several LED strings plus a user interface (buttons, encoder). Estimated: a 48 MHz core can refresh 8 PWM channels at 16 kHz without CPU saturation, leaving headroom for protocol and UI tasks.
Рекомендуется
Brushed DC and Stepper Motor Control
The ATSAMD21E15L-MNT is well matched for brushed-DC and stepper motor control loops. The Cortex-M0+ at 48 MHz executes a PID loop in roughly 5-10 us, and the TCC peripheral generates the precise center-aligned PWM waveforms needed for H-bridge drivers. The 12-bit ADC samples motor current through dedicated ADC channels with hardware-averaged conversions, while the on-chip analog comparators implement hardware over-current protection. With 32 KB Flash, the part stores field-oriented-control tables or simple motion profiles. The 32-VQFN package's exposed thermal pad handles the modest dissipation of a Cortex-M0+ core. Pair this MCU with a DRV8871 or A4950 H-bridge driver for a complete motion subsystem.
Рекомендуется
USB Human Interface Devices (HID)
The ATSAMD21E15L-MNT is widely used for USB keyboards, mice, and game controllers when paired with the larger SAM D21E pin-count variants; the 32-pin VQFN variant used here focuses on non-USB HID such as BLE mice or wireless keyboards. The Cortex-M0+ core handles HID report parsing, debouncing, and wireless packet forwarding with ample headroom. The six SERCOM peripherals let the MCU connect to a wireless transceiver over SPI while serving additional GPIOs for switches and LEDs. The SAM D21E 1.6 V minimum supply suits single-cell Li-ion power, common in wireless peripherals. Designers typically add a vendor-specific HID descriptor stack in the 32 KB Flash.
Рекомендуется
Industrial Control Daughter Boards
The ATSAMD21E15L-MNT targets industrial control applications including sensor conditioning, simple PLC I/O expansion, and HMI buttons. The -40 C to +105 C industrial temperature grade ('L' suffix) covers most industrial environments, while the Cortex-M0+ deterministic interrupt latency handles real-time I/O. Functional-safety standards support (ISO 26262 ASIL B, IEC 61508 SIL 2, IEC 60730 Class B) helps engineers designing safety-relevant appliances or sub-systems. With 32 KB Flash and 4 KB SRAM, the part implements Modbus RTU slave, IO-Link PHY bridging, or simple HMI logic. The VQFN-32 package is compact enough for densely populated control boards.
Рекомендуется
Battery-Powered Wearable Devices
The ATSAMD21E15L-MNT fits battery-powered wearables such as fitness bands, smart watches, and medical sensors. The Cortex-M0+ core's low active current, combined with SAM D21E sleep currents in the microamp range, lets wearables run for weeks on a small Li-ion or coin cell. The 32 KB Flash stores BLE HCI bridge firmware or simple sensor-fusion code, while the 4 KB SRAM holds data buffers. The six SERCOM peripherals connect to BLE/SPI sensors over a shared bus, and the 12-bit ADC reads analog bio-sensors (PPG, temperature). The 1.6 V minimum supply suits single-cell Li-ion directly. Estimated: at 10 Hz sensor sampling and BLE notifications every 5 seconds, average current is well under 100 uA.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ATSAMD21E15L-MNT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ATSAMD21E15L-MFT | ATSAMD21E15L-MFN | ATSAMD21E15L-MF | ATSAMD21E16L-MNT | ATSAMD21E15B-AU |
|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | 32-VQFN (5x5 mm) | 32-QFN (5x5 mm) - same footprint | 32-QFN (5x5 mm) - same footprint | 32-QFN (5x5 mm) - same footprint | 32-VQFN (5x5 mm) - same footprint | TQFP-32 - same pin count, different land pattern |
| CPU Core | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz | ARM Cortex-M0+ 48 MHz |
| Program Flash | 32 KB | 32 KB | 32 KB | 32 KB | 64 KB (+100%) | 32 KB |
| SRAM | 4 KB | 4 KB | 4 KB | 4 KB | 8 KB (+100%) | 4 KB |
| Operating Temperature | -40 C to +105 C (industrial) | -40 C to +105 C | -40 C to +105 C | 0 C to +85 C (commercial) | -40 C to +105 C | -40 C to +85 C |
| Supply Voltage | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V | 1.6 V to 3.6 V |
| Approximate Qty-1 Price (USD) | 2.95 | 2.85-2.95 | 2.75-2.85 | 2.65-2.75 | 3.45-3.65 | 2.95-3.15 |
Ключевые отличия
- 32-VQFN (5x5 mm) with industrial -40 C to +105 C temperature grade (против ATSAMD21E15L-MF)
- Drop-in 64 KB Flash upgrade available within same footprint (против ATSAMD21E15L-MFT)
- Functional-safety standards capability (ISO 26262 ASIL B, IEC 61508 SIL 2, IEC 60730 Class B) (против Generic Cortex-M0+ MCU from another vendor)
Заметки по проектированию
The ATSAMD21E15L-MNT requires decoupling on both VDDIN and VDDANA rails. Use a 100 nF ceramic + 4.7 uF bulk on VDDIN placed within 5 mm of the pin, plus a 100 nF ceramic on VDDANA within 5 mm when ADC/DAC/analog comparators are active. Estimated: at 48 MHz active CPU, VDDIN draws roughly 7-10 mA peak; at 3.3 V this is well within the VQFN thermal envelope (typically 50 C/W theta_JA on a 4-layer 1 oz PCB) so a small copper pour is sufficient.
Do not assume all SAM D21E 32-pin variants expose the USB D+/D- pins; the 32-VQFN package does NOT break out USB, so this part cannot be used for USB device designs. For USB HID or CDC, choose the 48-pin or 64-pin SAM D21E variants. Also note the 'L' suffix means -40 C to +105 C industrial grade; the part without 'L' (commercial) tops out at +85 C. Verify the suffix in your BOM matches your deployment environment.
The 32-VQFN package has an exposed thermal pad that must be soldered to a copper pour of at least 25 mm^2 on a 4-layer PCB. Estimated: with theta_JA of 50 C/W on a JEDEC 2s2p test board, the part dissipates 0.5 W at +25 C ambient before reaching the +105 C thermal limit. For higher-power applications (active CPU at 48 MHz with all peripherals on), consider the ATSAMD21E16L-MNT or upgrade to a 48-pin/64-pin variant in the same SAM D21E family for better thermal performance.
Keep the SWDIO/SWCLK traces (PA22/PA23) short and length-matched within 25 mm for reliable Atmel/Microchip Studio programming. Place the 32.768 kHz crystal traces (PA00/PA01) symmetrically and surround them with ground pour to minimize noise coupling into the RTC. Avoid routing high-frequency signals (PWM, SERCOM) under the crystal area. Decoupling capacitors should be placed between the IC and the supply source, with vias placed close to the pad for low inductance.
For the VQFN-32 land pattern, follow Microchip's recommended PCB footprint in the SAM D21/DA1 family datasheet. The exposed thermal pad should have at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) for heat transfer to inner copper layers. Avoid solder-mask-defined pads on the thermal pad; use non-solder-mask-defined (NSMD) pads to allow proper solder wicking and inspection. Estimated: a properly-landed VQFN-32 reduces junction-to-ambient thermal resistance by 30-40% versus a poorly-landed one.
Информация о соответствии
RoHS and Green compliance per Mouser product description (Pb-free, 105C industrial). Functional-safety capability (ISO 26262 ASIL B, IEC 61508 SIL 2, IEC 60730 Class B) per Microchip product page. AEC-Q100 not specifically listed for the ATSAMD21E15L-MNT - not generally marketed as automotive grade.
