BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
Артикул: BSC023N08NS5SCATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.95 | $1,95 |
| 10 | $1.78 | $17,80 |
| 100 | $1.52 | $152,00 |
| 500 | $1.31 | $655,00 |
| 1.000 | $1.18 | $1.180,00 |
| 5.000 | $1.05 | $5.250,00 |
BSC023N08NS5SCATMA1 Обзор
An N-channel power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or block current in power-conversion circuits. In the broader taxonomy, it sits inside the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, which sits alongside GaN and SiC as one of the dominant power-switch technologies for sub-200 V applications. Low RDS(on) directly translates into lower conduction losses, smaller heat sinks, and higher system efficiency.
Key specifications include 2.3 mΩ typical RDS(on) at 10 V VGS, a gate threshold of 3.8 V, a total gate charge of 98 nC at 10 V VGS, an input capacitance of 6.8 nF, an output capacitance of 74 pF, and a junction-to-case thermal resistance of 0.72 K/W. The combination of low charge and low capacitance supports high-frequency switching in telecom, server, and motor-drive converters.
The MOSFET is built on Infineon's OptiMOS 5 trench process, which reduces cell pitch and on-state losses versus earlier OptiMOS generations. The SuperSO8 DSC package exposes the die through a large top-side cooling pad, achieving the 0.72 K/W RthJC figure that allows the device to dissipate 188 W with proper PCB thermal design.
Typical applications include telecom and server point-of-load converters, 48 V battery-management FETs, AGV and e-forklift motor drives, synchronous rectification in telecom bricks, and high-current DC-DC buck stages for hyperscale data centers. The wide -55 °C to +175 °C junction range also supports harsh-environment industrial designs.
Designers should plan thermal copper area and gate-drive strength carefully. With a 98 nC total gate charge, a 1 A gate driver is recommended for nanosecond-class switching, and a Kelvin-source connection (pin 4 on SuperSO8 DSC) must be tied to the gate-return path to suppress common-source inductance.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes not consolidated in the Infineon datasheet.
Аналоги без доработки для BSC023N08NS5SCATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC023N08NS5SCATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID) at Tc.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC117N08NS5ATMA1
✅ Прямая замена✓ В наличии
$0.46 / шт.
Открыть даташит →ISC080N10NM6ATMA1
✅ Прямая замена✓ В наличии
$1.05 / шт.
Открыть даташит →BSC0902NSIATMA1
✅ Прямая замена✓ В наличии
$0.32 / шт.
Открыть даташит →BSC022N04LS6ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.66 / шт.
Открыть даташит →IPB020N10N5LFATMA1
✅ Прямая замена✓ В наличии
$2.62 / шт.
Открыть даташит →BSC023N08NS5SCATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 202 A |
| Power Dissipation (PD, Tc=25°C) | 188 W |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V |
| Total Gate Charge Qg | 98 nC at VGS=10 V |
| Input Capacitance Ciss | 6.8 nF |
| Output Capacitance Coss | 74 pF |
| Thermal Resistance RthJC | 0.72 K/W |
| Рабочая температура перехода | -55 °C to +175 °C |
| Корпус | PG-WSON-8-2 (SuperSO8 DSC) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Конфигурация выводов BSC023N08NS5SCATMA1
| Контакт 1 | Source — Source connection (bonded to exposed top-side pad) |
| Контакт 2 | Source — Source connection |
| Контакт 3 | Source — Source connection |
| Контакт 4 | Kelvin-Source — Gate-return source sense pin - tie to gate-driver return to suppress common-source inductance |
| Контакт 5 | Source — Source connection |
| Контакт 6 | Source — Source connection |
| Контакт 7 | Source — Source connection |
| Контакт 8 | Drain — Drain terminal |
| Контакт PAD | Drain (Exposed Pad) — Drain thermal pad - must be soldered to PCB copper for rated thermal performance |
Область безопасной работы - DC
Типичное применение
BSC023N08NS5SCATMA1 подходит для 6 применениеs: 48 V Telecom Point-of-Load Converters, Server & Hyperscale Data-Center Buck Converters, E-Forklift and AGV Motor Drives, Battery Management System (BMS) Protection FETs, Synchronous Rectification in Telecom AC-DC Adapters, Solar Inverter DC-Side Switches.
48 V Telecom Point-of-Load Converters
The BSC023N08NS5SCATMA1 is a strong fit for the synchronous-rectifier (SR) and main-switch positions in 48 V telecom isolated DC-DC bricks. Its 80 V VDS gives over 60% margin above a 48 V nominal bus while tolerating transient ringing, and the 2.3 mΩ typical RDS(on) at 10 V VGS keeps conduction loss below 1% at 50 A output. Placed on the secondary-side low-side SR, the device's 98 nC total gate charge supports 200-500 kHz switching typical in modern telecom converters, and the 0.72 K/W RthJC allows designers to drop heatsinks in favor of PCB copper. Source: Infineon OptiMOS 5 datasheet.
Рекомендуется
Server & Hyperscale Data-Center Buck Converters
For 48 V-to-12 V or 48 V-to-1 V direct-conversion stages in hyperscale data centers, the BSC023N08NS5SCATMA1's 188 W power dissipation and 202 A continuous current let one part replace two paralleled 60-80 V competitors, reducing board area and BOM cost. The 0.72 K/W RthJC supports dense layouts with only top-side copper thermal relief, while the 6.8 nF Ciss and 74 pF Coss enable 500 kHz switching without exceeding 10 nC gate-drive losses. Source: Infineon OptiMOS 5 datasheet; design example patterns from Server System Infrastructure Consortium.
Рекомендуется
E-Forklift and AGV Motor Drives
Battery-electric forklift and AGV traction inverters operating from 48 V or 72 V battery packs benefit from the BSC023N08NS5SCATMA1's 80 V VDS, 202 A continuous current, and SuperSO8 DSC footprint. Used as the low-side switch in three-phase inverter legs driving 5-15 kW PMSM motors, the device's 2.3 mΩ RDS(on) cuts I²R losses and extends battery runtime by 4-6% versus higher-RDS(on) competitors. Its -55 °C to +175 °C junction range supports cold-warehouse and outdoor-deployed AGVs.
Рекомендуется
Battery Management System (BMS) Protection FETs
For 48 V lithium-ion battery packs in e-mobility and stationary storage, the BSC023N08NS5SCATMA1 serves as the high-side or low-side protection FET, where its 80 V VDS comfortably exceeds 48 V nominal plus transient spike margins. The 2.3 mΩ RDS(on) minimizes pack-to-load voltage drop during 100-200 A peak discharge pulses, while the 98 nC Qg keeps BMS FET-driver power consumption below 50 mW. Source: Infineon OptiMOS 5 datasheet and Infineon BMS reference designs.
Рекомендуется
Synchronous Rectification in Telecom AC-DC Adapters
The BSC023N08NS5SCATMA1 placed on the secondary-side synchronous-rectifier slot of a 90-265 VAC-to-48 VDC telecom adapter achieves >97% efficiency at 500 W output, thanks to the 2.3 mΩ RDS(on) and 188 W dissipation capability. The exposed-pad SuperSO8 DSC package allows direct attachment to the chassis ground plane for additional heatsinking in fan-less 1U adapters. Source: Infineon application note on 80 V SR design.
Рекомендуется
Solar Inverter DC-Side Switches
In string-inverter DC-side disconnect and short-circuit protection circuits, the BSC023N08NS5SCATMA1 handles 60-80 VDC solar-array short-circuit currents up to its 202 A rating. The 80 V VDS provides adequate margin above Voc-cold of typical 60-cell residential strings. Designers benefit from the 0.72 K/W RthJC for fan-less outdoor enclosures, where the 175 °C junction limit supports high-ambient rooftop operation.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC023N08NS5SCATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC117N08NS5ATMA1 | ISC080N10NM6ATMA1 | BSC0902NSIATMA1 | BSC022N04LS6ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same |
| Drain-Source Voltage VDS | 80 V | 80 V | 100 V | 80 V | 40 V | 100 V |
| Technology | OptiMOS 5 (N-channel) | OptiMOS 5 (N-channel) | OptiMOS 6 (N-channel) | OptiMOS 5 (N-channel) | OptiMOS 6 (N-channel) | OptiMOS 5 (N-channel) |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Ключевые отличия
- Industry-leading 2.3 mΩ RDS(on) at 80 V in SuperSO8 DSC (против BSC0902NSIATMA1)
- Dedicated Kelvin-source pin for high-frequency switching (против ISC080N10NM6ATMA1)
- 0.72 K/W RthJC supports fan-less high-current designs (против IPB020N10N5LFATMA1)
Заметки по проектированию
The PG-WSON-8-2 (SuperSO8 DSC) package achieves 0.72 K/W RthJC only when the exposed top-side and bottom-side pads are soldered to a continuous copper pour. Estimated: at PD = 5 W with a 4-layer 2 oz copper PCB and 1 square inch top-side copper, total RthJA is approximately 25-30 K/W, producing a 125-150 °C junction rise above ambient. Without the top pad soldered, RthJA can exceed 60 K/W, halving safe power dissipation.
Always connect the SuperSO8 DSC's pin 4 Kelvin-source to the gate-driver return path, not the power-source plane. The dedicated Kelvin pin suppresses common-source inductance that otherwise slows switching edges and causes drain-voltage overshoot. Route the gate-drive loop (gate-driver output -> pin 8 gate pad -> pin 4 Kelvin-source -> gate-driver return) as a tight, area-minimized loop less than 10 mm in perimeter.
Do not operate the BSC023N08NS5SCATMA1 above its 80 V VDS rating even for short transients - avalanche breakdown degrades RDS(on) over time. Add a transient-voltage suppressor or RC snubber (typically 10 Ω + 1 nF) across the drain-source if the layout inductance exceeds 10 nH. Estimated: at 100 A turn-off with 10 nH loop inductance, inductive overshoot reaches V = L*dI/dt = 10 nH * 100 A / 10 ns = 100 V, exceeding 80 V rating.
Use at least 2 oz copper on top and bottom layers for the drain pad area, with thermal vias (0.3 mm diameter, 1.0 mm pitch) connecting to inner copper planes. Avoid placing signal traces under the device to maximize continuous copper. For >5 W continuous dissipation, add a small aluminum heatsink (e.g., 10 mm x 10 mm x 5 mm) with thermal interface material on the top exposed pad.
Информация о соответствии
RoHS compliance per Infineon product page and DigiKey listing. Standard-grade part - not AEC-Q100 qualified; AEC-Q100 automotive alternatives exist in the OptiMOS 5 family under different suffixes. Halogen-free status not explicitly stated in verified data.
