BSC190N15NS3G - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
Артикул: BSC190N15NS3G ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.42 | $2,42 |
| 10 | $2.05 | $20,50 |
| 100 | $1.62 | $162,00 |
| 500 | $1.35 | $675,00 |
| 1.000 | $1.18 | $1.180,00 |
BSC190N15NS3G Обзор
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-channel between drain and source, allowing current flow with very low conduction-loss. Power MOSFETs belong to the broader family of discrete semiconductors used for power management, sitting hierarchically under transistors, then discrete power devices. They are typically specified by R_DS(on), V_DS breakdown, Qg (gate charge), and Qrr (reverse-recovery charge), all of which govern switching and conduction efficiency.
OptiMOS 3 is Infineon's third-generation power-MOSFET platform that delivers an order-of-magnitude lower R_DS(on) per die area than earlier planar generations, achieved through a trench-gate architecture and refined epitaxial profile. For the BSC190N15NS3G, this translates to 19 mOhm max R_DS(on) at 10 V V_GS, allowing the device to replace older 200 V/40 A parts with the same PCB footprint while cutting conduction loss roughly in half.
Typical applications include 48 V telecom and server point-of-load (POL) converters, synchronous rectification in telecom brick supplies, motor-drive half-bridges for e-bike and industrial fans, hot-swap controllers in 48 V backplanes, and primary-side switching in solar micro-inverters. The device's low Qg and absence of body-diode reverse-recovery charge make it especially suitable for high-frequency hard-switched topologies up to several hundred kHz.
When laying out a PCB for the BSC190N15NS3G, place the gate-drive return and power-source return on the same continuous copper pour to minimize source-inductance-driven gate ringing. The exposed pad (pin 5) must be soldered to a sufficiently large copper area for thermal dissipation; without it, the device can dissipate only a fraction of its rated power before thermal shutdown.
This page synthesizes Infineon's OptiMOS 3 datasheet data, distributor pricing snapshots, cross-reference alternatives from DigiKey/Mouser, and practical design notes - content not consolidated anywhere else on the web for the BSC190N15NS3G.
Аналоги без доработки для BSC190N15NS3G — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC190N15NS3G (тот же форм-фактор и посадочное место) — отличается по Package, Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC190N15NS3GATMA1
✅ Прямая замена✓ В наличии
$0.98 / шт.
Открыть даташит →BSC190N15NS3G-G
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
FDMS86200
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
FDMS86200DC
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VBQA1152N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC190N15NS3G Максимальные параметры и электрические характеристики
| FET Type | N-Channel |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (trench-gate) |
| Drain-Source Voltage (V_DS max) | 150 V |
| Continuous Drain Current (I_D, Tc) | 50 A |
| Gate-Source Voltage (V_GS max) | +/-20 V |
| Static Drain-Source R_DS(on) max @ 10 V | 19 mOhm |
| Total Power Dissipation (P_D, Tc=25C) | 125 W |
| Рабочая температура перехода | -55C to +150C |
| Корпус | SuperSO8 5x6 / PG-TDSON-8-1 |
| Тип монтажа | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) |
| Число выводов | 8 |
Конфигурация выводов BSC190N15NS3G
| Контакт 1 | G — Gate (MOSFET gate input, drive with respect to source) |
| Контакт 2 | D — Drain (internally bonded to pins 3 and 4 for low R_DS(on)) |
| Контакт 3 | D — Drain (internally bonded to pin 2 and pin 4) |
| Контакт 4 | D — Drain (internally bonded to pins 2 and 3) |
| Контакт 5 | S — Source (large thermal/exposed pad on bottom of device) |
| Контакт 6 | S — Source (internally bonded to pins 5, 7, 8) |
| Контакт 7 | S — Source (internally bonded to pins 5, 6, 8) |
| Контакт 8 | S — Source (internally bonded to pins 5, 6, 7) |
Область безопасной работы (DC, T_C = 25C)
Типичное применение
BSC190N15NS3G подходит для 6 применениеs: 48 V Telecom Point-of-Load (POL) Synchronous Rectification, Industrial Motor-Drive Half-Bridge (BLDC / PMSM), Solar Micro-Inverter Primary-Side Switching, 48 V Hot-Swap / ORing Controllers in Telecom Backplanes, Automotive 48 V Mild-Hybrid Auxiliary Loads, High-Frequency Isolated DC-DC Primary-Side Switch.
48 V Telecom Point-of-Load (POL) Synchronous Rectification
The BSC190N15NS3G fits 48 V-bus POL synchronous rectification with 150 V V_DS providing a 3x safety margin over nominal 48 V plus inductive transients. Its 19 mOhm R_DS(on) at V_GS=10 V keeps synchronous-rectifier conduction loss well under 1 W at 2-3 A outputs typical of POL bricks. The OptiMOS 3 low Qg (~30 nC typical) enables 300-500 kHz switching without excessive gate-drive loss. Compared to older 200 V planar parts, the trench-gate architecture roughly halves switching loss, reducing the heatsink requirement for 100-200 W brick converters.
Рекомендуется
Industrial Motor-Drive Half-Bridge (BLDC / PMSM)
The BSC190N15NS3G's 50 A continuous drain current (Tc=25C) and 150 V breakdown make it suitable for BLDC and PMSM motor half-bridges driving 24-48 V brushed/brushless motors in industrial fans, e-bikes, and small-EV traction. The SuperSO8 5x6 package's low R_theta_JA (~50 C/W on 1 sq-in. copper pour) keeps the junction under 125C at 100 W pulsed dissipation typical of PWM switching at 20-50 kHz. The OptiMOS 3 low Qrr reverse-recovery charge reduces dead-time losses and shoot-through risk during complementary switching.
Рекомендуется
Solar Micro-Inverter Primary-Side Switching
For sub-1 kW solar micro-inverters running from a 40-60 V panel input, the BSC190N15NS3G's 150 V V_DS absorbs boost-converter switching spikes up to 100 V with adequate margin. The 19 mOhm R_DS(on) keeps full-load conduction loss under 2 W at the 10-15 A primary-side currents typical of 600 W micro-inverters. OptiMOS 3 trench technology achieves higher figure-of-merit (R_DS(on) x Qg) than planar MOSFETs, enabling higher switching frequency and smaller magnetics - critical for the small-form-factor micro-inverter enclosure.
Рекомендуется
48 V Hot-Swap / ORing Controllers in Telecom Backplanes
In 48 V telecom backplane hot-swap and ORing applications, the BSC190N15NS3G serves as the switching element that interrupts load current during board insertion. The 150 V V_DS handles 48 V nominal plus 100 V transient with margin, while 50 A continuous current meets typical 30-40 A backplane slot ratings. The 19 mOhm R_DS(on) keeps full-load voltage drop below 1 V, preserving downstream DC-DC converter headroom. The SuperSO8 footprint allows direct footprint compatibility with established telecom ORing designs.
Рекомендуется
Automotive 48 V Mild-Hybrid Auxiliary Loads
Although not AEC-Q101 qualified by Infineon for this exact SKU, the BSC190N15NS3G is widely used in non-safety automotive 48 V mild-hybrid auxiliary loads (cooling fans, water pumps, auxiliary DC-DC stages). Its 150 V breakdown tolerates 48 V load-dump transients up to ~80 V, and 50 A continuous current drives 2-3 kW auxiliary inverters. The OptiMOS 3 platform shares process technology with Infineon's automotive-qualified parts, giving designers confidence for non-safety subsystems where full Q101 qualification is not mandated.
Рекомендуется
High-Frequency Isolated DC-DC Primary-Side Switch
The BSC190N15NS3G is well-matched to isolated half-bridge or full-bridge primary-side switch positions in 48 V-input telecom bricks, where its 150 V V_DS handles the reflected 80-100 V rail and low Qg enables 200-500 kHz operation. The trench-gate OptiMOS 3 architecture's low Qrr eliminates the body-diode reverse-recovery loss that plagues planar MOSFETs in hard-switched bridge topologies. Power dissipation at 5-10 A primary-side current is dominated by conduction loss; the 19 mOhm R_DS(on) keeps this under 2 W even at full load.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC190N15NS3G — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC190N15NS3GATMA1 | BSC190N15NS3G-G | FDMS86200 | FDMS86200DC | VBQA1152N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | onsemi | VBsemi |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (5x6) - same | PG-TDSON-8-1 (Dual-Cool 5x6) - same | DFN8 (5x6) - pin-to-pin |
| Drain-Source Voltage V_DS (V) | 150 | 150 | 150 | 150 | 150 | 150 |
| R_DS(on) max @ 10 V (mOhm) | 19 | 19 | 19 | ~25 | ~22 | 15.8 |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | onsemi N-channel trench | onsemi N-channel trench (dual-cool) | VBsemi trench |
| Pin-to-Pin Compatible | Yes (baseline) | Yes (identical die) | Yes (identical die) | Yes (per GlobalSpec cross-ref) | Yes (per GlobalSpec cross-ref) | Yes (per VBsemi datasheet) |
Ключевые отличия
- OptiMOS 3 trench technology achieves industry-leading figure-of-merit (FOM = R_DS(on) x Qg) for 150 V class (против FDMS86200 (onsemi))
- Authorized Infineon factory-pack availability with full lot traceability (против TECH PUBLIC BSC190N15NS3G-TP (third-party distributor at LCSC))
- Lower R_DS(on) than the onsemi FDMS86200 alternative (против VBQA1152N (VBsemi))
Заметки по проектированию
Estimated: at P_D = 10 W and R_theta_JA = 50 C/W (1 sq-in. copper pour, still air), the junction temperature rise above ambient is ~50C; at full 125 W rated dissipation with adequate heatsinking the die reaches the 150C junction maximum. The exposed pad (pin 5) must be soldered to a continuous copper pour of at least 1 sq. inch on top and bottom layers, stitched with thermal vias, to achieve the datasheet R_theta_JA. Without the exposed-pad connection, sustained power must be derated to ~5 W to stay below Tj=125C at 25C ambient.
Place the gate-driver return (gate-pull-down component ground) and the power-source return on the same continuous copper pour to minimize source-inductance-driven gate ringing. Keep the gate-loop area under 0.5 sq. cm and use a 10-100 ohm gate-source resistor to damp V_GS oscillations. Add a TVS or 100 ohm gate-source resistor to prevent V_GS from exceeding +/-20 V during drain-voltage transients (dV/dt can couple through C_gd and lift the gate above threshold).
Do not operate the BSC190N15NS3G in linear mode - the SOA curve shown on the datasheet is for pulsed/DC switching, not DC linear operation. At V_DS = 75 V and I_D = 1.7 A the device is at the edge of the SOA; sustained linear operation at high V_DS x I_D will rapidly exceed thermal limits. For linear applications (e.g., hot-swap, e-fuse) use a dedicated linear-mode MOSFET. Also verify V_GS never exceeds +/-20 V; electrostatic damage on the gate is the most common failure mode for this part.
The SuperSO8 5x6 footprint is pin-compatible with PowerPAK SO-8 from Vishay and the onsemi TDSON-8 family, enabling drop-in second sourcing from FDMS86200. Use a 2-oz copper pour on top and bottom layers stitched with 0.3 mm thermal vias (8-12 vias under the exposed pad) for optimal thermal performance. Solder paste stencil aperture of 1:1 ratio on the thermal pad with multiple smaller openings (window-pane pattern) reduces solder voiding.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Lead-free terminal finish ('-G' suffix denotes RoHS-compliant plating). Halogen-free per OptiMOS 3 family datasheet declaration. NOT AEC-Q100/Q101 qualified - this exact part is industrial/consumer grade; for automotive safety applications use an Infineon AEC-Q101 qualified OptiMOS variant.
