CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
Артикул: CGD65A055S2 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.05 | $40,50 |
| 100 | $3.6 | $360,00 |
| 500 | $3.2 | $1.600,00 |
| 1.000 | $2.85 | $2.850,00 |
CGD65A055S2 Обзор
What is a GaN HEMT? A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap field-effect transistor built on an AlGaN/GaN heterojunction. Compared with traditional silicon MOSFETs, GaN HEMTs offer lower on-resistance per unit area, zero reverse-recovery charge (Qrr), and much faster switching edges. They belong to the broader hierarchy of power semiconductors (power transistor → FET → HEMT → GaN HEMT → wide-bandgap device) and are typically deployed in switched-mode power supplies (SMPS), where they enable higher power density and efficiency than silicon super-junction MOSFETs.
Key features of the CGD65A055S2 include CGD's proprietary ICeGaN™ gate technology, which makes the device directly compatible with virtually all standard gate drivers and controller ICs without requiring a negative-rail bias supply. The device integrates a current-sense (CS) pin that outputs a proportional signal of the drain current, eliminating the need for an external shunt resistor in many topologies. An integrated NL³ (non-linear, low-loss, low-R) circuit reduces dead-time losses in half-bridge configurations, improving overall converter efficiency.
Typical applications include totem-pole bridgeless PFC, LLC and QR flyback converters, half-bridge and full-bridge motor drivers, on-board chargers (OBC), telecom rectifier modules, and Class-D audio amplifiers where audio-grade linearity and high dV/dt immunity are required. The 650 V rating provides generous derating margin for universal-input AC/DC converters operating from rectified 230 VAC mains.
When designing with this device, ensure the gate-drive loop inductance is minimized to keep switching edges clean. Use a 4.7-10 Ω external gate resistor and Kelvin-source connection where available. Place a small ferrite bead or RC snubber on the switching node to damp high-frequency ringing caused by the very fast dV/dt capability of the GaN die.
Аналоги без доработки для CGD65A055S2 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с CGD65A055S2 (тот же форм-фактор и посадочное место) — отличается по Package, Manufacturer, Operating Mode, Continuous Drain Current (I_D), Gate Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CGD65A055SH2
✅ Прямая замена✓ В наличии
$7.4 / шт.
Открыть даташит →CGD65A055S2-T07
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CGD65A055SH2
✅ Прямая замена✓ В наличии
$7.4 / шт.
Открыть даташит →CGD65A055S2-T07
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CGD65A055S2 Максимальные параметры и электрические характеристики
| Manufacturer | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | 650 V |
| On-Resistance (RDS(on)) | 55 mΩ |
| Непрерывный ток стока (TC=25°C) | 27 A |
| Gate Technology | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | Yes (integrated CS output) |
| Integrated Protection Circuit | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) |
| Корпус | 16-pin DFN 8x8 mm |
| Тип монтажа | Surface Mount |
| Channel Type | N-Channel |
| Operating Mode | Enhancement-mode (normally-off) |
| Статус RoHS | Compliant (lead-free) |
| Polarity | Single FET |
Конфигурация выводов CGD65A055S2
| Контакт 1 | GATE — Gate drive input (ICeGaN, 0/10 V or 0/12 V standard) |
| Контакт 2 | CS — Current sense output (proportional to drain current) |
| Контакт 3 | SOURCE — Power source (Kelvin source recommended) |
| Контакт 4 | NC — Not connected (per datasheet) |
| Контакт 5 | SOURCE — Power source |
| Контакт 6 | NC — Not connected (per datasheet) |
| Контакт 7 | SOURCE — Power source |
| Контакт 8 | NC — Not connected (per datasheet) |
| Контакт 9 | SOURCE — Power source |
| Контакт 10 | NC — Not connected (per datasheet) |
| Контакт 11 | SOURCE — Power source |
| Контакт 12 | NC — Not connected (per datasheet) |
| Контакт 13 | SOURCE — Power source |
| Контакт 14 | NC — Not connected (per datasheet) |
| Контакт 15 | DRAIN — Power drain |
| Контакт 16 | DRAIN — Power drain (also exposed thermal pad) |
Forward-Bias Область безопасной работы
Типичное применение
CGD65A055S2 подходит для 6 применениеs: Totem-Pole Bridgeless PFC, LLC and QR Flyback DC-DC Converters, On-Board Charger (OBC) for EV, Class-D Audio Amplifiers, Solar / PV Inverters and Microinverters, Industrial Motor Drives and Robotics.
Totem-Pole Bridgeless PFC
The CGD65A055S2 is a strong fit for totem-pole bridgeless PFC stages operating from universal-input AC mains at 1-3 kW power levels. Its zero reverse-recovery charge (Qrr) eliminates the body-diode conduction losses that plague silicon super-junction MOSFETs in continuous-conduction-mode (CCM) totem-pole designs, and the 650 V rating provides ample derating margin for 380 VDC bulk-rail operation from rectified 230 VAC mains. The integrated NL³ dead-time reduction circuit further trims switching losses during the AC-frequency synchronous-rectifier transitions, where the slow leg switches at line frequency and the fast leg operates at PWM frequency. Compared with a silicon MOSFET solution, the CGD65A055S2 typically enables 0.5-1.0 percent efficiency improvement at full load and allows the switching frequency to be raised from 65 kHz to 200 kHz or beyond, shrinking the inductor and EMI filter size. The integrated current-sense pin simplifies cycle-by-cycle current-mode control and provides OCP without an external shunt, reducing BOM cost and improving accuracy.
Рекомендуется
LLC and QR Flyback DC-DC Converters
In LLC half-bridge and quasi-resonant flyback DC-DC converters, the CGD65A055S2 enables switching frequencies of 500 kHz to 1 MHz, far above what is practical with silicon MOSFETs of similar RDS(on). The device's low output capacitance (Coss) and zero Qrr reduce dead-time and valley-switching losses, raising full-load efficiency by 1-3 percent compared with silicon super-junction alternatives at the same 650 V rating. The ICeGaN standard-driver gate compatibility simplifies the gate-drive transformer or bootstrap half-bridge driver design, since no negative rail is required and standard 0/10 V or 0/12 V gate-drive ICs can be used directly. Typical target applications include 240 W to 1 kW telecom rectifier modules, USB-PD laptop adapters, and server CRPS front-end DC-DC stages.
Рекомендуется
On-Board Charger (OBC) for EV
The CGD65A055S2 targets 3.3 kW to 22 kW on-board chargers (OBC) used in plug-in hybrid and battery-electric vehicles, where power density, efficiency, and bidirectional V2X capability are essential. The 650 V rating accommodates the 400 V or 800 V traction battery bus, while the 55 mΩ RDS(on) keeps conduction losses low in both PFC boost and DCDC LLC stages. The fast switching edges enable a 4x to 10x reduction in magnetics size compared with IGBT-based OBCs of equivalent power, and the integrated current-sense pin supports the ASIL-grade over-current and short-circuit protection requirements. Compared with silicon MOSFETs, the CGD65A055S2 typically allows OBC efficiency to exceed 96 percent at full load.
Рекомендуется
Class-D Audio Amplifiers
The CGD65A055S2 is well-suited for high-power Class-D audio amplifiers in the 500 W to 2 kW per-channel range, including subwoofer amplifiers, professional touring amplifiers, and home-theater receivers. GaN HEMTs offer superior dV/dt immunity and zero reverse-recovery charge compared with silicon MOSFETs, which translates to lower dead-time distortion and improved THD+N figures at high output power. The integrated NL³ dead-time control circuit optimizes the switching transition timing, while the ICeGaN gate interface allows direct drive from standard half-bridge gate-driver ICs. The 650 V rating provides generous headroom for 230 VAC mains-rectifier-fed ±170 V or 340 V single-rail supply rails. In professional audio applications, the resulting sound quality is typically described as more detailed and less harsh than equivalent silicon-output amplifiers.
Рекомендуется
Solar / PV Inverters and Microinverters
In string inverters and DC-optimized microinverters for photovoltaic solar systems, the CGD65A055S2 enables higher efficiency and power density than silicon-based designs. The 650 V rating covers 1500 VDC string inverter DC-bus voltages with appropriate derating, and the zero Qrr simplifies the implementation of HERIC, H6, or full-bridge topologies that suffer from body-diode reverse recovery in silicon implementations. Microinverters benefit from the very small 16-DFN 8x8 footprint and the elimination of bulky heatsinks, since GaN's lower switching losses allow higher switching frequencies at the same junction temperature.
Рекомендуется
Industrial Motor Drives and Robotics
The CGD65A055S2 suits low-voltage three-phase motor drives in industrial automation, robotics, and drone applications where high PWM frequency (50-200 kHz) reduces audible noise and improves torque ripple. The integrated current-sense pin supports field-oriented control (FOC) feedback loops without an external shunt, reducing PCB area and improving reliability. The wide 650 V rating also handles 400 VAC rectified industrial bus rails. In BLDC and PMSM drives for cobots, AGVs, and small CNC spindles, the CGD65A055S2's fast edges enable quieter operation and higher control-loop bandwidth than silicon MOSFET solutions at the same power level.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CGD65A055S2 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CGD65A055SH2 | CGD65A055S2-T07 |
|---|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 16-DFN (8x8) | 16-DFN (8x8) - same | 16-DFN (8x8) - same |
| Drain-to-Source Voltage (VDS) | 650 V | 650 V | 650 V |
| On-Resistance (RDS(on)) | 55 mΩ | 55 mΩ | 55 mΩ |
| Continuous Drain Current (TC=25°C) | 27 A | 27 A | 27 A |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN™ (standard-driver compatible) | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | Yes (integrated CS output) | No (CS pin omitted) | Yes (integrated CS output) |
| Price (qty-1, USD) | 4.50 | 3.90 | 4.50 |
Ключевые отличия
- ICeGaN gate technology eliminates need for negative gate-drive bias rail (против GaN Systems GS-065-011-1-L)
- Integrated current-sense pin eliminates external shunt resistor (против Most discrete 650 V GaN HEMTs)
- Integrated NL³ circuit reduces dead-time losses in half-bridge configurations (против Silicon super-junction MOSFETs at same RDS(on))
Заметки по проектированию
Minimize the gate-drive loop inductance by placing the gate driver physically close to the CGD65A055S2 and routing the gate-source traces directly over a continuous ground plane. Use a Kelvin-source connection (separate source-sense trace tied to the driver's ground reference) to eliminate source-inductance-induced gate-rail ringing. This prevents false turn-on events caused by the very fast dV/dt (>50 V/ns) capability of the GaN die.
Estimated: at VDS=400 V and ID=10 A in a half-bridge, the CGD65A055S2 dissipates approximately 1.5 W conduction + switching losses, requiring thermal management to keep junction temperature below 150 °C. Solder the exposed thermal pad (pin 16 / drain) to a copper pour of at least 25 mm² on each PCB layer, stitched with thermal vias (0.3 mm drill, 1 mm pitch) to an inner-plane heat-spreader. Add a small clip-on heatsink for applications dissipating >5 W continuous.
Do not exceed VGS of ±20 V absolute maximum - the ICeGaN gate is robust against standard driver voltages but can be damaged by transient over-voltage from an undersized gate-driver bootstrap. Add a 4.7-10 Ω external gate resistor to damp high-frequency ringing, and place a small ferrite bead or RC snubber (1-2 Ω + 1-2 nF) on the switching node to suppress parasitic-oscillation ringing that GaN HEMTs can excite in poorly laid-out half-bridges.
Информация о соответствии
RoHS compliant and lead-free per Cambridge GaN Devices product page. Not AEC-Q100 qualified; for AEC-Q100 GaN HEMT applications, contact Cambridge GaN Devices for automotive-grade part numbers in the same 16-DFN 8x8 family.
