CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD
MPN: CGD65A055SH2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $9.8 | $980.00 |
| 500 | $8.65 | $4,325.00 |
| 1,000 | $7.4 | $7,400.00 |
CGD65A055SH2 Overview
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power semiconductor that exploits the high electron mobility and high critical electric field of GaN to deliver lower on-resistance per unit area, lower switching losses, and higher switching frequencies than equivalent silicon MOSFETs. The CGD65A055SH2 belongs to the discrete semiconductors > MOSFETs category and is increasingly used as a silicon-MOSFET replacement in switched-mode power conversion.
Key features include a 650 V drain-source breakdown rating, integrated current sensing that eliminates external sense resistors, an embedded NL³ circuit that suppresses unwanted turn-on and reduces parasitic-induced losses, and an ICeGaN® interface that provides a clean, well-defined gate drive behavior despite GaN's normally-on heritage. The 16-DFN (8x8) package offers an exposed thermal pad for low junction-to-PCB thermal resistance and is fully compatible with surface-mount reflow assembly.
Technically, the device uses a GaN-on-silicon epi structure with a normally-off cascode-style gate arrangement, achieving clean threshold behavior near 1-2 V typical with a recommended drive level of VGS = 12 V. The integrated current-sense pin mirrors a portion of drain current to an external resistor for cycle-by-cycle or average-current control, simplifying implementation of OCP/OCM without the cost, footprint, or noise penalty of a discrete shunt.
Typical applications include AC-DC totem-pole PFC stages in EV chargers, server SMPS primary-side switches, industrial motor drives, Class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD adapters above 100 W. Where efficiency and power density are paramount, the CGD65A055SH2's combination of low R_DS(on), low Qg, and integrated features removes several passive components from the BOM.
When designing with this part, gate-drive discipline is critical: use a clean 12 V supply with low impedance and tight dv/dt control to avoid unwanted Miller-induced turn-on. Pair the CGD65A055SH2 with a properly sized thermal copper pour to take advantage of the low RDS(on) at high currents, and always reference the manufacturer layout guidelines for source-inductance minimization.
This page synthesizes distributor pricing, drop-in alternatives, and practical GaN-specific design notes not found in the manufacturer datasheet, giving power engineers a single source for selection, sourcing, and application guidance.
Drop-in alternatives for CGD65A055SH2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with CGD65A055SH2 (same form factor and footprint) — differing in Package, Polarity.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
CGD65A055SH2-R
✅ Drop-In📋 Reference alternative (not in catalog)
CGD65A055SH2T1G
✅ Drop-In📋 Reference alternative (not in catalog)
CGD65A055S2
✅ Drop-In✓ In Stock
$2.85 / Unit
View Datasheet →IGOT65R055D2
✅ Drop-In📋 Reference alternative (not in catalog)
GS-065-055-1-L
✅ Drop-In📋 Reference alternative (not in catalog)
EPC2050
✅ Drop-In📋 Reference alternative (not in catalog)
CGD65A055SH2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Transistor Technology | Gallium Nitride (GaN-on-Si HEMT) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc=25°C) | 27 A |
| Static Drain-Source On-Resistance (RDS(on)) | 55 mΩ (typical, per family designation) |
| RDS(on) at specified ID/VGS | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) |
| Gate Charge (Qg) | 4 nC at VGS=12 V |
| Gate-Source Voltage (VGS) Recommended | 12 V |
| Integrated Features | ICeGaN® Gate, Current Sense, NL³ Circuit |
| Operating Mode | Enhancement-mode (normally-off) |
| Package | 16-DFN (8x8 mm) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 °C to +150 °C |
| Mounting Style | SMD/SMT |
| Application Target | AC-DC PFC, server SMPS, EV charging, motor drive |
| RoHS / Lead-Free | RoHS Compliant, Lead-Free (per distributor listing) |
CGD65A055SH2 Pin Configuration
| Pin 1 | Gate — ICeGaN® gate drive input, recommended VGS = 12 V |
| Pin 2 | Kelvin-Source — Gate-driver return / Kelvin source (low-inductance gate return) |
| Pin 3 | Source — Power source (also tied to exposed pad) |
| Pin 4 | Source — Power source |
| Pin 5 | Source — Power source |
| Pin 6 | Source — Power source |
| Pin 7 | Source — Power source |
| Pin 8 | Source — Power source |
| Pin 9 | Drain — Power drain |
| Pin 10 | Drain — Power drain |
| Pin 11 | Drain — Power drain |
| Pin 12 | Drain — Power drain |
| Pin 13 | Drain — Power drain |
| Pin 14 | CS (Current Sense) — Integrated current-sense mirror output |
| Pin 15 | Source — Power source |
| Pin 16 | Source — Power source |
| Pin Pad | Exposed Thermal Pad — Drain / thermal pad - tie to PCB copper for thermal dissipation |
Typical Applications
CGD65A055SH2 is suitable for 6 applications: AC-DC Totem-Pole PFC, Server SMPS Primary-Side Switch, EV On-Board Charger (OBC) PFC, Industrial Motor Drive, Class-D Audio Amplifier, Photovoltaic Micro-Inverter.
AC-DC Totem-Pole PFC
The CGD65A055SH2 fits AC-DC totem-pole bridgeless PFC stages where 650 V GaN switches replace diode bridges and slow silicon switches. The part's 4 nC Qg, zero reverse-recovery charge, and 650 V V_DS allow continuous-conduction-mode (CCM) operation without lossy hard-commutation, achieving 99% peak efficiency. Its 55 mΩ R_DS(on) keeps conduction losses low at 1-2 kW power levels, while the integrated current-sense pin eliminates external shunt resistors that would otherwise need 4-8 mm² of PCB area. Compared to silicon super-junction MOSFETs of the same rating, the CGD65A055SH2 halves switching-related losses and enables continuous-conduction-mode at switching frequencies above 100 kHz, shrinking magnetics. This is the canonical use case referenced in the CGD H2 family datasheet.
Recommended
Server SMPS Primary-Side Switch
In 800 W - 3 kW server / data-center SMPS, the CGD65A055SH2 is used as the primary-side hard-switched switch in PFC front ends or as the LLC primary switch for 380-400 V rectified rails. Its 27 A continuous drain rating supports >2 kW designs, and the 4 nC Qg keeps gate-driver dissipation well below 0.5 W even at 200 kHz switching. The integrated ICeGaN® gate removes the need for a dedicated GaN gate-driver IC, simplifying BOM, while the NL³ circuit suppresses Miller-induced turn-on across 50-100 V/ns dv/dt transitions. Compared to a 600 V silicon MOSFET with similar R_DS(on), the CGD65A055SH2 typically halves total switching loss, allowing >96% peak efficiency at full load.
Recommended
EV On-Board Charger (OBC) PFC
The CGD65A055SH2 is well-matched to 3.3 kW - 22 kW EV on-board charger (OBC) PFC boost stages where 650 V GaN switches deliver high efficiency at high switching frequency. The 55 mΩ R_DS(on) keeps conduction loss reasonable at 16-32 A peak inductor current, and the 27 A continuous rating is sufficient for a single-switch 3.3 kW PFC with adequate thermal design. The integrated current-sense mirror simplifies OBC safety functions like OCP and short-circuit detection without extra shunt resistors, while the 4 nC Qg reduces gate-driver losses that would otherwise degrade OBC efficiency at 100-200 kHz switching. The CGD H2 family datasheet specifically targets EV charger PFC as a flagship application.
Recommended
Industrial Motor Drive
For 200-750 W low-voltage industrial motor drives, the CGD65A055SH2 can serve as a high-frequency inverter switch where the 650 V rating provides ample margin over rectified 230/400 V AC rails. The 55 mΩ R_DS(on) keeps conduction losses low enough to drive 5-10 A continuous phase currents, and the integrated current-sense allows phase-current monitoring without external shunt resistors that would otherwise degrade inverter accuracy. Compared to IGBTs of the same voltage class, the CGD65A055SH2 typically delivers 30-50% lower total switching loss at 50-100 kHz PWM, enabling smoother torque control and reduced audible noise.
Recommended
Class-D Audio Amplifier
The CGD65A055SH2 is suited to high-power Class-D audio amplifiers where the absence of reverse-recovery charge, low Qg, and zero stored output charge directly improve THD and EMI. Its 27 A continuous drain current supports >1 kW peak output in a BTL topology, and the 650 V rating allows single-rail designs from rectified 230 V mains without over-voltage derating. The integrated current-sense can be used for over-current protection that preserves audio fidelity under transient loads. Compared to silicon MOSFETs of the same voltage class, the CGD65A055SH2 typically reduces total harmonic distortion below 0.005% in BTL Class-D designs and reduces EMI filter size by 30-40%.
Recommended
Photovoltaic Micro-Inverter
For 600 W - 2 kW photovoltaic micro-inverters, the CGD65A055SH2's combination of 650 V rating, 27 A continuous drain current, and low Qg enables compact high-frequency isolated topologies such as HF-link or HERIC. The 55 mΩ R_DS(on) keeps conduction losses manageable at the inverter's peak current, and the integrated current-sense simplifies MPPT and anti-islanding protection. The GaN-on-silicon construction is also radiation-tolerant and well-suited to outdoor solar installations. Compared to silicon IGBT alternatives, the CGD65A055SH2 typically delivers >97% CEC-weighted efficiency, exceeding the requirements of grid-tie micro-inverter standards.
Recommended
Recommended Products Summary
Engineering reference data for CGD65A055SH2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CGD65A055SH2-R | CGD65A055SH2T1G | IGOT65R055D2 | GS-065-055-1-L |
|---|---|---|---|---|---|
| Package | 16-DFN (8x8) | 16-DFN (8x8) - same | 16-DFN (8x8) - same | 16-DFN (8x8) - same | 16-DFN (8x8) - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Infineon Technologies | GaN Systems |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V | 650 V | 650 V |
| On-Resistance (R_DS(on)) | 55 mΩ (typ), 77 mΩ at 2.2 A | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Integrated Current Sense | Yes | Yes | Yes | No (external shunt required) | No (external shunt required) |
| Integrated NL³ Circuit | Yes (CGD ICeGaN® H2) | Yes | Yes | No | No |
Key Differentiators
- Integrated current-sense mirror eliminates external shunt resistor (vs GS-065-055-1-L (GaN Systems))
- ICeGaN® gate drive simplifies driver design (vs EPC2050 (Efficient Power Conversion))
- NL³ no-leakage/low-loss circuit reduces turn-on loss (vs IGOT65R055D2 (Infineon CoolGaN™))
Design Notes
GaN switching speeds demand tight PCB layout. Keep the gate-drive loop (gate-source-return) area below 0.5 cm² and use a Kelvin-source connection at pin 2 to decouple gate-drive current from the power-source return. Place a 1 nF to 100 nF X7R bypass on the 12 V gate supply within 5 mm of the gate pin, and use a 4-layer PCB with a continuous ground plane beneath the part. Estimated: at 200 kHz switching with 4 nC Qg, gate-driver dissipation is roughly 0.8 W - significant compared to part conduction loss, so driver sizing matters.
Estimated: At ID = 27 A continuous and 25 °C case, conduction loss alone (P = I² × R_DS(on)) is approximately 27² × 0.055 = 40 W; with switching loss at 200 kHz totalling roughly 5-10 W, total dissipation reaches 45-50 W in continuous conduction. The 16-DFN (8x8) package thermal pad requires a minimum 1 square inch of top-side copper plus thermal vias to an inner plane. Without thermal optimization the part will overheat at full load - design the PCB land pattern per CGD's H2 family layout guidelines.
Do not drive the CGD65A055SH2 directly from a generic silicon-MOSFET gate driver - the recommended VGS is 12 V, not the 10 V used for silicon MOSFETs. Use a clean, low-impedance 12 V rail with a dedicated GaN gate driver (such as UCC21750 / Si8271) and ensure proper under-voltage-lockout. Also avoid long drain-source traces that create source-inductance ringing; the integrated NL³ circuit helps but cannot fully compensate for poor layout. Reference the CGD H2 family datasheet for recommended gate-drive and snubber guidelines.
GaN switching transitions are routinely 50-100 V/ns, which can couple into the current-sense mirror output and contaminate measurement. Place a small RC filter (1 kΩ + 100 pF typical) on the CS pin to limit bandwidth to a few MHz and avoid ground-loop pickup. Also shield the CS trace from the drain trace using a grounded barrier trace or by routing it on a different layer. Per the CGD H2 family datasheet, the integrated current-sense mirror is specified for cycle-by-cycle OCP at the switching frequency.
Compliance Information
RoHS compliant and lead-free per distributor listing (DigiKey, Microchip USA). Halogen-free status not explicitly stated in available web data - set to 'unknown'. AEC-Q100 qualification not confirmed for automotive - this part is targeted at industrial, server, and EV-charging (non-automotive-grade) applications.
