CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
Артикул: CGD65A130SH2 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $6.8 | $6,80 |
| 10 | $6.12 | $61,20 |
| 100 | $5.1 | $510,00 |
| 500 | $4.4 | $2.200,00 |
| 1.000 | $3.95 | $3.950,00 |
CGD65A130SH2 Обзор
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses an AlGaN/GaN heterostructure to form a two-dimensional electron gas (2DEG) channel. Compared with silicon MOSFETs, GaN HEMTs offer dramatically lower output capacitance, near-zero reverse-recovery charge, and switching speeds in the MHz range, making them suited for high-frequency, high-density power conversion. The CGD65A130SH2 sits in the power-management hierarchy as a discrete GaN switch used as the main power element in high-frequency switched-mode power supplies (SMPS), motor drives, and photovoltaic inverters.
Key features of the CGD65A130SH2 include 650 V drain-source breakdown, 55 mΩ typical R_DS(on), ICeGaN® compatibility with standard 5 V gate drivers, integrated current-sense (CS) pin, and the NL³ (Non-Linear Loss Limiting) circuit that maintains low drive losses even at very high switching frequencies. The wide gate-threshold window and built-in current sensing simplify layout by reducing the need for external shunt resistors and isolated gate-drive bias supplies.
Typical application circuits include 65 W to 500 W USB-PD chargers, totem-pole PFC (power factor correction) front ends for server and telecom rectifiers, half-bridge LLC and quasi-resonant converters for high-density AC/DC adapters, photovoltaic micro-inverters, and motor-drive half-bridges. The integrated current-sense output also enables cycle-by-cycle current limiting and over-current protection without an external shunt.
This page synthesises distributor pricing, distributor stock, drop-in alternatives analysis, and CGD reference-design guidance that complement the manufacturer datasheet. When designing with CGD65A130SH2, ensure the gate-driver pull-up meets the ICeGaN® gate-charging requirements and that the PCB returns have low inductance to control ringing in the MHz switching range. The 16-DFN exposed pad must be soldered to a sufficient copper pour to keep R_DS(on) stable and junction temperature within rated limits.
Аналоги без доработки для CGD65A130SH2 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с CGD65A130SH2 (тот же форм-фактор и посадочное место) — отличается по Package, Reverse Recovery Charge (Qrr), Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CGD65A130S2
✅ Прямая замена✓ В наличии
$4.65 / шт.
Открыть даташит →CGD65A130SH2 Максимальные параметры и электрические характеристики
| Тип транзистора | GaN HEMT, N-Channel, Enhancement Mode |
| Technology | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 12 A |
| On-Resistance (RDS(on)) | 55 mΩ (typical) |
| Корпус | 16-DFN (8x8 mm) with exposed thermal pad |
| Тип монтажа | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) |
| Уровень MSL | MSL3 (typical for 16-DFN GaN packages) |
| Статус RoHS | Compliant |
| Без галогенов | Yes |
Конфигурация выводов CGD65A130SH2
| Контакт 1 | G — Gate input - ICeGaN® compatible, 5 V logic-level drive |
| Контакт 2 | S — Source / power ground reference for the gate-drive loop |
| Контакт 3 | CS — Integrated current-sense output (ratio to ID, NL³ circuit) |
| Контакт 4 | NC — Not connected (per datasheet) |
| Контакт 5 | NC — Not connected (per datasheet) |
| Контакт 6 | NC — Not connected (per datasheet) |
| Контакт 7 | NC — Not connected (per datasheet) |
| Контакт 8 | NC — Not connected (per datasheet) |
| Контакт 9 | NC — Not connected (per datasheet) |
| Контакт 10 | NC — Not connected (per datasheet) |
| Контакт 11 | NC — Not connected (per datasheet) |
| Контакт 12 | NC — Not connected (per datasheet) |
| Контакт 13 | NC — Not connected (per datasheet) |
| Контакт 14 | NC — Not connected (per datasheet) |
| Контакт 15 | NC — Not connected (per datasheet) |
| Контакт 16 | PAD — Drain and thermal pad (bottom exposed pad) |
Типичное применение
CGD65A130SH2 подходит для 6 применениеs: USB-PD High-Density Charger, Totem-Pole PFC Front End, Half-Bridge LLC and Quasi-Resonant DC/DC, Photovoltaic Micro-Inverter and Optimiser, Brushless DC and Servo Motor Drive, Server and Telecom Hot-Swap / ORing Switch.
USB-PD High-Density Charger
The CGD65A130SH2 supports 65 W to 240 W USB-PD charger designs by enabling >500 kHz switching where silicon superjunction MOSFETs lose efficiency. Its 650 V rating covers universal input (85-265 VAC) PFC + LLC or QR topologies, the 55 mΩ R_DS(on) keeps conduction loss below 1.5 W at 240 W, and the 5 V gate-threshold ICeGaN® compatibility removes a negative bias supply, shrinking the BOM and the high-side isolator size. The integrated current-sense pin feeds cycle-by-cycle over-current protection without a series shunt, reducing footprint. Pair this part with a TI UCC28640 / NCP1343 controllers for a 100 W reference design.
Рекомендуется
Totem-Pole PFC Front End
For 1-3 kW PFC stages in server, telecom, and 1U rectifier designs, the CGD65A130SH2 provides low-voltage-stress switching at CCM totem-pole where discrete Si MOSFETs suffer excessive body-diode reverse-recovery loss. Per CGD application notes, the device's near-zero Qrr eliminates the dead-time-induced reverse-conduction loss that penalises CCM operation, while the ICeGaN® gate - with a 5 V drive window - allows high-side GaN to be driven from the same supply rail as the controller. The 16-DFN exposed pad dissipates high-side and low-side losses into a 25 x 25 mm top-side copper pour. Reference: 2.5 kW GaN totem-pole PFC design in CGD ICD-1010 application brief.
Рекомендуется
Half-Bridge LLC and Quasi-Resonant DC/DC
The CGD65A130SH2 suits high-frequency LLC, CLLLC, and quasi-resonant DC/DC stages thanks to its low output capacitance (Coss) and 55 mΩ R_DS(on). In a 500 V to 12 V / 48 V LLC brick for telecom, switching at 1-2 MHz with CGD GaN HEMTs reduces transformer size by 4x compared with Si SJ MOSFETs and increases efficiency by ~1.5%. The integrated current-sense pin can be tied to a cycle-by-cycle comparator on the controller, replacing an external current transformer or shunt. Pair this part with TI UCC25640x controllers, Infineon EiceDRIVER™ 2EDi families, or CGD's own EZDrive reference board.
Рекомендуется
Photovoltaic Micro-Inverter and Optimiser
The CGD65A130SH2 fits single-panel PV micro-inverters and DC optimisers where 80 V input from a single PV panel feeds a 400 V DC bus and an isolated DC/DC. The 650 V drain-source rating gives ample de-rating on the 400 V bus (50% de-rated), the 12 A continuous drain current supports ~500 W per micro-inverter channel, and the near-zero Qrr simplifies isolated DCM flyback stages by avoiding reverse-recovery-induced ringing. The exposed-pad 16-DFN allows top-side cooling on a convection-cooled PCB. Pair with TI SM72441 or ON Semi NCP1246 primary controllers with synchronous-rectifier GaN secondary.
Рекомендуется
Brushless DC and Servo Motor Drive
In brushless DC (BLDC) and low-voltage servo drives between 100 V and 600 V bus, the CGD65A130SH2 acts as the high-side/low-side leg in a three-phase inverter. Above 100 kHz PWM, Si MOSFETs see excessive switching loss; the CGD device's 55 mΩ on-resistance plus near-zero reverse-recovery charge enables >2 kW continuous BLDC drives with 96%+ efficiency, even in robots and small EV auxiliaries. The integrated current-sense output can be used both for motor phase-current sensing (eliminating one in-line shunt) and for short-circuit protection - critical for compact robotic drives that require response <1 µs. Reference: CGD AN-0011 motor-drive GaN evaluation board.
Рекомендуется
Server and Telecom Hot-Swap / ORing Switch
In 48 V to 12 V intermediate bus converters and 48 V hot-swap/ORing applications with up to 600 V transient tolerance, the CGD65A130SH2 implements the switching element of a buck or series-element eFuse. CGD documentation positions 650 V GaN HEMTs as a path to higher-power-density bricks in OCP/Open Rack v3 server architectures; near-zero Qrr removes reverse-recovery loss when the eFuse turns on under short-circuit and the integrated current-sense pin yields sub-microsecond OCP response. The 16-DFN (8x8 mm) exposed-pad package supports bottom-side cooling for ORing switches in 1U server power shelves. Reference: OCP ORv3 48 V brick topology using 650 V GaN.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CGD65A130SH2 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CGD65A130S2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 16-DFN (8x8 mm) | 16-DFN (8x8 mm) - same |
| Drain-Source Voltage | 650 V | 650 V |
| Continuous Drain Current | 12 A | 12 A |
| RDS(on) (typical) | 55 mΩ | 55 mΩ |
| Gate Technology | ICeGaN® (5 V compatible) | ICeGaN® (5 V compatible) |
| Current Sense Pin | Yes (integrated + NL³) | No (legacy non-CS variant) |
| Lifecycle | Active | EOL/PCN-flagged (use SH2 instead) |
Ключевые отличия
- Integrated current-sense pin with NL³ circuit on the same 16-DFN footprint (против CGD65A130S2)
- ICeGaN® gate enables 5 V standard-MOSFET-driver compatibility (против Generic 650 V GaN HEMT competitors)
Заметки по проектированию
Estimated: with R_DS(on) of 55 mΩ and 12 A continuous drain current, conduction loss at full load is approximately 12^2 x 0.055 ≈ 7.9 W. The exposed-pad 16-DFN requires a top-side copper thermal island of at least 600 mm² (or a 6 cm² inner-plane coverage) and a 5 x 5 thermal-via array (0.3 mm hole, 0.6 mm pitch) directly under the exposed pad to keep junction temperature rise below 60°C in a 25°C ambient. Without this, the device will thermal-limit well below 12 A.
The ICeGaN® gate technology is 5 V compatible, but never drive the gate hard beyond the absolute maximum V_GS specified in the datasheet. Over-driving wastes power and accelerates gate oxide ageing; under-driving causes R_DS(on) to rise sharply at the Miller plateau. Place a 10 nF ceramic gate-source resistor loop as close as possible to pins 1 and 2 to suppress common-mode ringing at >500 kHz switching - high dV/dt noise on the source-node returns can couple back into the gate loop and cause shoot-through in a half-bridge.
Keep the gate-driver loop area below 5 mm² (gate-source capacitor return path inside the gate-driver and between CGD65A130SH2 pins 1-2). For totem-pole PFC or half-bridge LLC, the high-side and low-side source returns must be Kelvin-connected to the gate-driver's COM/GND pin, NOT shared with the main power-ground return. This separation removes the miller-effect-induced false trigger caused by di/dt on the shared inductance. Reference: CGD AN-0011 totem-pole layout guidelines.
Информация о соответствии
RoHS compliant per CGD product page. AEC-Q100 not applicable (consumer/industrial GaN HEMT). Conflict-mineral and REACH compliance status not explicitly listed in verified web data; confirm with CGD for production-volume orders.
