CSD22206W - -8V P-Ch 5A WLP MOSFET | Texas Instruments
Артикул: CSD22206W ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.47 | $4,70 |
| 100 | $0.31 | $31,00 |
| 500 | $0.24 | $120,00 |
| 1.000 | $0.19 | $190,00 |
CSD22206W Обзор
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the power management hierarchy, discrete MOSFETs sit below integrated power stages and above gate drivers as the final switching element in load switches, DC-DC converters, and battery-protection circuits. The NexFET family from TI is optimized for the lowest on-resistance and gate charge in the smallest possible outline.
Key features include the 1.5 mm x 1.5 mm WLP footprint, which minimizes board area in space-constrained designs; low RDS(on) of 4.7-5.7 mOhm, which reduces conduction losses and heat generation; integrated gate ESD protection, improving assembly reliability; and excellent thermal characteristics enabled by the wafer-level chip-scale package with solder balls acting directly as thermal paths.
The NexFET silicon technology balances cell density and ruggedness, achieving very low on resistance and gate charge simultaneously. The ultra-low profile of the DSBGA package suits stacked-board and wearable form factors where height is restricted. The P-channel polarity simplifies high-side load-switch topologies by eliminating the need for a charge pump or bootstrap drive.
Typical applications include battery-operated portable electronics, load switches for power rails, power-path management in smartphones and wearables, and small DC-DC converter stages. The -8V rating and 5A capability fit single-cell lithium-ion battery systems.
Design with care regarding thermal management: at 1.7W maximum dissipation in a tiny footprint, PCB copper pours under the solder balls are essential. Verify gate-drive voltage levels, as RDS(on) is strongly VGS dependent in this low-voltage device.
Аналоги без доработки для CSD22206W — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CSD22203W
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CSD23201W
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CSD25203W3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CSD22206WT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CSD22206W Максимальные параметры и электрические характеристики
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -8 V |
| Continuous Drain Current (ID) | -5 A (Ta) |
| Power Dissipation (PD) | 1.7 W (Ta) |
| RDS(on) Max | 5.7 mOhm |
| RDS(on) Typ | 4.7 mOhm (at higher VGS) |
| Корпус | 9-DSBGA (WLP) 1.5 mm x 1.5 mm |
| Тип монтажа | Surface Mount |
| Gate ESD Protection | Yes (integrated) |
| Technology | NexFET Power MOSFET |
| Configuration | Single FET |
| Способ монтажа | Wafer-Level Chip-Scale Package |
| Статус RoHS | Compliant |
| Applications | Battery-operated space constrained applications |
Конфигурация выводов CSD22206W
| Контакт A1 | D — Drain connection |
| Контакт A2 | D — Drain connection |
| Контакт A3 | D — Drain connection |
| Контакт B1 | S — Source connection |
| Контакт B2 | G — Gate connection (with integrated ESD protection) |
| Контакт B3 | S — Source connection |
| Контакт C1 | D — Drain connection |
| Контакт C2 | D — Drain connection |
| Контакт C3 | D — Drain connection |
Область безопасной работы
Типичное применение
CSD22206W подходит для 6 применениеs: Portable Battery-Powered Electronics, High-Side Load Switches, Smartphone and Wearable Power Path Management, DC-DC Converter Stages, Reverse-Polarity and Battery Protection, Industrial Compact Sensor Nodes.
Portable Battery-Powered Electronics
The CSD22206W fits single-cell Li-ion powered devices where board area is at a premium: its 1.5 mm x 1.5 mm WLP footprint and ultra-low profile allow placement in stacked-board layouts. The -8V rating covers battery plus charger transients, while 5.7 mOhm RDS(on) limits voltage drop and I2R losses at multi-amp loads. Integrated gate ESD protection improves yield in high-volume assembly. Typical use: main power-path switch between battery and PMIC.
Рекомендуется
High-Side Load Switches
P-channel polarity enables simple high-side switching without a charge pump or bootstrap: pull the gate low to turn on. With 4.7-5.7 mOhm RDS(on), conduction drop at 5A is under 30 mV, preserving rail accuracy for downstream SoCs. The 1.7W (Ta) dissipation limit and WLP thermal path require a solid ground/copper plane under the die. Gate ESD protection adds robustness in production handling and in-circuit transients.
Рекомендуется
Smartphone and Wearable Power Path Management
In smartphones and wearables, the CSD22206W serves as a battery disconnect or power-path FET where height is severely restricted - the DSBGA WLP profile is among the lowest available. The -8V rating provides margin above the 4.4V max cell voltage plus ring/transients. Low gate charge reduces switching losses during frequent power-path transitions in power-management IC sequencing, extending effective battery life in always-on wearable use cases.
Рекомендуется
DC-DC Converter Stages
The CSD22206W can serve as the synchronous rectification or load-disconnect element in small non-isolated DC-DC stages for portable systems. Its low RDS(on) minimizes conduction loss while low gate charge suits the moderate switching frequencies typical of portable converters. Pair with an appropriate controller: note that P-channel high-side drive simplifies the gate-driver requirement versus N-channel, removing bootstrap components in compact buck designs.
Рекомендуется
Reverse-Polarity and Battery Protection
In battery-operated systems, the CSD22206W provides reverse-polarity or over-discharge protection on the negative or switched rail. The -8V rating tolerates reversed-battery conditions on low-voltage cells, and the 5A capacity suits main-path protection. The WLP die's solder balls double as thermal vias to spread heat into the PCB. Integrated gate ESD protection withstands handling and field-servicing events common in consumer battery products.
Рекомендуется
Industrial Compact Sensor Nodes
Battery-powered IoT and industrial sensor nodes use the CSD22206W as a rail switch to fully disconnect loads during sleep, cutting leakage to near zero. The tiny 1.5 mm x 1.5 mm WLP footprint fits dense node PCBs, and low gate charge minimizes energy lost in infrequent switching events. With 5A capability, the same FET also covers peak transmit currents of wireless modules without measurable voltage sag.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CSD22206W — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CSD22203W | CSD23201W | CSD22206WT |
|---|---|---|---|---|
| Package | 9-DSBGA (WLP) 1.5x1.5 mm | 9-DSBGA (WLP) 1.5x1.5 mm - same | 9-DSBGA (WLP) 1.5x1.5 mm - same | 9-DSBGA (WLP) 1.5x1.5 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage | -8 V | -12 V | -20 V | -8 V |
| Gate ESD Protection | Yes | Yes | Yes | Yes |
| Packing Option | Tape & Reel | Tape & Reel | Tape & Reel | Alternate reel quantity (T suffix) |
Ключевые отличия
- Smallest footprint in its class (против CSD23201W)
- Higher voltage headroom drop-in (против CSD22203W)
- Integrated gate ESD protection (против generic WLP P-FETs)
Заметки по проектированию
The 1.7W (Ta) dissipation limit in a 1.5 mm x 1.5 mm WLP depends almost entirely on PCB copper. Connect the drain/source balls to generous pours on at least two layers with thermal vias. At 5A and 5.7 mOhm, conduction loss is only ~0.14W, but switching and reduced-VGS operation increase it; verify junction temperature using the datasheet thermal metrics for your board stack-up.
RDS(on) is strongly VGS dependent in this low-voltage NexFET. The 5.7 mOhm max figure assumes adequate gate drive; driving the gate at reduced levels raises channel resistance and conduction losses sharply. Verify the on-resistance vs VGS curves in the TI datasheet at your actual drive level before finalizing thermal and voltage-drop budgets.
Keep gate traces short and away from high dV/dt drain nodes to limit parasitic turn-on from gate-drain capacitance. Although the CSD22206W integrates gate ESD protection, respect the gate voltage rating during layout and add a pulldown resistor on the gate to define the off-state. WLP solder balls require no-flow underfill considerations depending on mechanical shock requirements.
Информация о соответствии
RoHS compliance per TI product page and DigiKey listing. REACH/halogen-free/conflict-minerals status not found in provided data.
