CSD22206W - -8V P-Ch 5A WLP MOSFET | Texas Instruments
MPN: CSD22206W β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.68 | $0.68 |
| 10 | $0.55 | $5.50 |
| 100 | $0.38 | $38.00 |
| 500 | $0.29 | $145.00 |
| 1,000 | $0.24 | $240.00 |
Drop-in alternatives for CSD22206W β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
CSD22206WT
β Drop-Inπ Reference alternative (not in catalog)
CSD25401Q3
β‘ Same Packageπ Reference alternative (not in catalog)
CSD23206W
β‘ Same Packageπ Reference alternative (not in catalog)
CSD17484F4
β‘ Same Packageβ In Stock
$0.14 / Unit
View Datasheet βCSD22206W Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -8 V |
| Continuous Drain Current (Id) | 5 A (Ta) |
| Power Dissipation (Pd) | 1.7 W (Ta) |
| On-Resistance (RDS(on)) | 5.7 mOhm (typ 4.7 mOhm) |
| Technology | NexFET Power MOSFET |
| Package | 9-DSBGA (WLP) 1.5 mm x 1.5 mm |
| Mounting Type | Surface Mount |
| Gate ESD Protection | Yes (integrated) |
| Profile | Ultra-low profile WLP |
| Operating Temperature | [DATA_NEEDED: operating temperature range] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS rating] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] |
| RoHS Status | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: MSL] |
CSD22206W Pin Configuration
| Pin A1 | GATE β Gate of P-channel MOSFET |
| Pin A2 | SOURCE β Source connection (connects to supply for high-side switch) |
| Pin A3 | SOURCE β Source connection (parallel ball for current sharing) |
| Pin B1 | DRAIN β Drain connection |
| Pin B2 | DRAIN β Drain connection (parallel ball) |
| Pin B3 | DRAIN β Drain connection (parallel ball) |
| Pin C1 | GATE/SOURCE β Ball assignment per datasheet ball map |
| Pin C2 | SOURCE β Source connection (parallel ball) |
| Pin C3 | DRAIN β Drain connection (parallel ball) |
Safe Operating Area (CSD22206W, -8V P-Channel)
Typical Applications
CSD22206W is suitable for 6 applications: Portable Battery-Powered Devices, High-Side Load Switching, Single-Cell Li-ion Power-Path Management, Small DC-DC Converter Power Stages, Wearable and IoT Device Power Control, Mobile Display and Peripheral Rail Switching.
Portable Battery-Powered Devices
In smartphones, tablets, and wearables, board area and height are at a premium. The CSD22206W occupies only 1.5 mm x 1.5 mm in an ultra-low-profile 9-DSBGA WLP while carrying 5A from a single-cell Li-ion rail (3.0-4.2V nominal, within the -8V rating). Its 4.7-5.7 mOhm on-resistance limits conduction loss to roughly 143 mW at full load, preserving battery runtime. Used as a high-side P-channel load switch, it needs no charge pump; the integrated gate ESD protection improves assembly yield. Thermal vias under the balls keep junction temperature low during peak current bursts.
Recommended
High-Side Load Switching
P-channel MOSFETs simplify high-side switches because the gate is pulled below the source to turn on, eliminating bootstrap or charge-pump circuitry needed with N-channel devices. The CSD22206W suits this role with -8V VDS headroom, 5A capability, and low gate charge for fast switching with small gate-drive circuits. At 5.7 mOhm, a 3A load dissipates only about 51 mW, allowing the tiny WLP to switch power rails without heatsinking. Add a series gate resistor and pull-up to source for controlled switching; verify inrush with large downstream capacitance to stay within safe operating limits.
Recommended
Single-Cell Li-ion Power-Path Management
Battery-powered systems use P-channel FETs for power-path ORing, discharge protection, and charger isolation. The CSD22206W -8V rating comfortably covers single-cell Li-ion transients, while 5A continuous current supports fast-charge and peak-load conditions. Its low 4.7 mOhm typical RDS(on) minimizes voltage drop, important at 3.0V low-battery conditions where every millivolt counts toward usable capacity. The 1.5 mm x 1.5 mm WLP fits dense power-management clusters beside charger and fuel-gauge ICs. Design the gate drive from the system controller with clamping to respect VGS limits and ensure clean turn-off during fault events.
Recommended
Small DC-DC Converter Power Stages
In compact synchronous or load-switched DC-DC stages, the CSD22206W serves as a P-channel control FET where its low gate charge reduces switching losses and its 4.7-5.7 mOhm RDS(on) limits conduction loss. The ultra-low-profile WLP suits height-restricted converter modules and mezzanine power supplies. Because the package is tiny, switching frequencies of a few hundred kilohertz to 1-2 MHz are practical, but PCB layout is critical: minimize the gate-loop and power-loop inductance with tight placement of input capacitance. Follow TI NexFET layout guidance to keep parasitic ringing within the -8V VDS rating.
Recommended
Wearable and IoT Device Power Control
Wearables and IoT nodes demand minimal board area and profile, making the 1.5 mm x 1.5 mm WLP CSD22206W an excellent rail-switch and power-gating element. Its 5A rating far exceeds typical sensor and radio loads, providing wide margin, while the low on-resistance limits I^2R loss during radio transmit bursts. Power-gating sensors and radios with this FET reduces quiescent system draw, directly extending battery life. The integrated gate ESD protection adds robustness during high-volume assembly. Pair with a small MCU-driven level shifter to translate GPIO voltages to the gate, and always verify VGS ratings against rail voltages.
Recommended
Mobile Display and Peripheral Rail Switching
Handheld devices switch display, camera, and peripheral rails using P-channel high-side FETs. The CSD22206W handles inrush and steady-state loads up to 5A while its small footprint tucks into the dense power section near PMICs. Low gate charge enables controlled soft-start ramp rates with a simple RC on the gate, limiting inrush into large display bulk capacitance. The -8V VDS margin covers battery transient and fault conditions. Because dissipation is only tens of milliwatts at typical 1-2A display loads, no thermal relief beyond standard copper pours is required, keeping the stack-up thin for slim industrial designs.
Recommended
Recommended Products Summary
Engineering reference data for CSD22206W β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD22206WT | CSD25401Q3 | CSD23206W |
|---|---|---|---|---|
| Package | 9-DSBGA (WLP) 1.5x1.5 mm | 9-DSBGA (WLP) 1.5x1.5 mm - same | SON 3x3 - footprint change required | 9-DSBGA (WLP) - verify ball map/polarity |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Polarity | P-Channel | P-Channel - same | P-Channel | N-Channel (verify) |
| VDS Rating | -8 V | -8 V | -40 V | [DATA_NEEDED] |
| Continuous Current | 5 A (Ta) | 5 A (Ta) | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) | 5.7 mOhm (typ 4.7 mOhm) | 5.7 mOhm (typ 4.7 mOhm) | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation | 1.7 W (Ta) | 1.7 W (Ta) | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate ESD Protection | Yes | Yes | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Smallest possible outline with integrated ESD protection (vs CSD25401Q3)
- Identical-die reel variant for volume production (vs CSD22206WT)
- Lowest on resistance and gate charge in its size class (vs CSD23206W)
Design Notes
The CSD22206W dissipates up to 1.7W (Ta) in a 1.5 mm x 1.5 mm WLP with no exposed thermal pad; all heat exits through the solder balls into the PCB. At 5A and 5.7 mOhm, conduction loss is about 143 mW, which is manageable, but design the land pattern with generous copper pours and multiple thermal vias to inner and bottom layers. Estimate junction rise using the PCB-dependent theta_JA from the TI datasheet rather than assuming package-only values.
Use the exact 9-ball DSBGA footprint from the TI datasheet with non-solder-mask-defined (NSMD) pads for reliable ball joints. Keep the gate trace short and routed away from the high-current drain path to minimize parasitic coupling. Place a small gate resistor (10-100 ohm) to damp ringing, and keep source and drain loops tight to reduce stray inductance in switching applications.
Do not exceed the -8V VDS rating; battery transients and inductive ringing can exceed nominal rail voltage. RDS(on) is strongly dependent on VGS - verify the on-resistance at your actual gate drive, not just the headline 4.7 mOhm figure. Finally, because WLP ball maps differ across the TI NexFET family, never assume pin compatibility with sibling part numbers without checking the datasheet ball map.
Compliance Information
Compliance details not present in the retrieved web data. Verify RoHS/REACH status on the TI product quality pages before production procurement.
