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Altera

EP3SE110F1152I4LN - Stratix III E FPGA 107.5K LE 1152-FCBGA | Altera

Артикул: EP3SE110F1152I4LN ⚠ Последняя закупка
В наличии Отправка в течение 1–3 рабочих дней
0.9 V Vdss 1152-ball FCBGA (Flip-Chip BGA) Package 375 MHz Speed 8,936,448 bits (8.5 Mbit) Memory
От $3360 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-09-09
Оптовые цены
Кол-во Цена за ед. Итого
1 $4200 $4.200,00
10 $3990 $39.900,00
100 $3780 $378.000,00
500 $3570 $1.785.000,00
1.000 $3360 $3.360.000,00
ℹ️ Все цены указаны в USD

EP3SE110F1152I4LN Обзор

The Altera (Intel) EP3SE110F1152I4LN is a high-density Stratix III E field-programmable gate array (FPGA) offering 107,500 logic elements, 744 user I/Os, and 8,936,448 bits of embedded memory, housed in a 1152-ball flip-chip BGA (FCBGA) package. The device is fabricated on a 65 nm process node and operates from a 0.9 V core supply with I/O voltages programmable up to 3.3 V per bank. It is rated to a maximum internal clock frequency of 375 MHz and targets high-performance logic, memory-rich, and DSP-intensive designs.

An FPGA (Field-Programmable Gate Array) is a type of semiconductor integrated circuit composed of configurable logic blocks (CLBs), programmable interconnects, and dedicated hardened IP such as block RAM, DSP slices, PLLs, and high-speed transceivers. FPGAs sit within the broader taxonomy of programmable logic devices (PLDs) -> logic ICs -> integrated circuits, and are used where ASIC NRE costs cannot be justified but deterministic hardware performance is required. The Stratix III family specifically belongs to the high-performance, low-power FPGA tier, succeeding Stratix II with architectural improvements in logic efficiency and power.

Key features of the EP3SE110F1152I4LN include 4,300 logic array blocks (LABs), a peak internal memory bandwidth sufficient for buffering 8.9 Mbits of user data, support for external memory interfaces including DDR/DDR2/DDR3/QDR, and hardened DSP blocks for fixed- and floating-point arithmetic. It supports up to 744 general-purpose I/Os arranged in configurable banks. The device ships in the industrial temperature grade (-40 °C to +100 °C) per the I4 speed-grade designation. The package is lead-free (Pb-free) with NiPdAu terminations.

Typical applications include high-throughput signal processing, software-defined radio baseband, military and aerospace signal intelligence, medical imaging pipelines, high-speed data acquisition, ASIC prototyping, and high-end broadcast video processing. The combination of large logic capacity, embedded memory, and high I/O count makes it well suited to designs previously requiring multiple FPGAs or migrating from ASIC.

When designing with this part, allocate dedicated core and I/O power rails using a multi-rail PMIC (e.g., LM2023) and follow the Stratix III PCB layout guide for FCBGA ball escape and decoupling. JTAG and AS configuration modes are both supported. Plan for JTAG chain integrity at the board level.

This page synthesizes XAIPART distributor pricing, drop-in same-package alternatives from the Stratix III E family, and practical design notes not found in the manufacturer datasheet.

Аналоги без доработки для EP3SE110F1152I4LN — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с EP3SE110F1152I4LN (тот же форм-фактор и посадочное место) — отличается по Operating Temperature, Family, Package, Process Technology, Speed Grade.

Intel
Operating Temperature: 0C to 85C (commercial)
Package: 1152-ball FCBGA (BBGA-1152)
Speed Grade: C4 (speed grade 4)
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: 0 C to 85 C (commercial)
Family: Stratix III E (Enhanced logic)
Package: 1152-pin FC-FBGA (BBGA)
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: 0C to +85C (Commercial)
Family: Stratix III Enhanced (E)
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: -40C to +100C (industrial)
Family: Stratix III
Process Technology: 40 nm low-power CMOS
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: -40C to +100C (Industrial, I3 grade)
Process Technology: 65 nm CMOS (1.1 V, all-layer copper SRAM)
Сравнить с EP3SE110F1152I4LN →
Altera
Family: Stratix III E FPGA
Package: 1152-ball FC-FBGA (Flip-Chip Fine-pitch BGA)
Process Technology: 65 nm CMOS
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: -40°C to +100°C (Industrial)
Family: Stratix III E
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: -40C to +100C (Industrial)
Package: 1152-BBGA, FCBGA
Process Technology: 40 nm
Сравнить с EP3SE110F1152I4LN →
Intel
Operating Temperature: -40C to +100C (industrial)
Family: Stratix III E
Package: 1152-BBGA, FCBGA
Сравнить с EP3SE110F1152I4LN →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

EP3SE110F1152I4L

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III E · 107,500 · 8,936,448 bits · 744 · 4300 · 528 (9-bit equivalent) · 1152-BBGA, FCBGA · Surface Mount

✓ В наличии

$4317.9 / шт.

Открыть даташит →

EP3SE110F1152I4

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III E · 107,500 · 4300 · 744 · 8,936,448 · 744 · 1152-ball FCBGA (Flip-Chip BGA) · -40°C to +100°C (Industrial)

✓ В наличии

$1020 / шт.

Открыть даташит →

EP3SE110F1152I3N

✅ Прямая замена ⚠️ Характеристики не проверены
Altera
📦 1152-ball FCBGA
Stratix III E · Stratix III E FPGA · Altera (now Intel PSG) · 107,500 · 8,936,448 · 744 · 4300 · Modular I/O banks (see Stratix III Device Handbook)

✓ В наличии

$3980 / шт.

Открыть даташит →

EP3SE110F1152I3

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III E · Intel (formerly Altera) · 107,500 · 8,936,448 · 4,300 · 744 · 107,500 · 8,936,448

✓ В наличии

$4150 / шт.

Открыть даташит →

EP3SE110F1152I2N

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III Enhanced (EP3SE110) · Stratix III · 107,500 · 4,300 · 8,936,448 · 744 · 1,152 · BGA (FCBGA)

✓ В наличии

$1480 / шт.

Открыть даташит →

EP3SE110F1152C4N

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III Enhanced (E) · 107,500 · 8,936,448 · 896 · 4300 · 744 · 1.1 V · 65 nm

✓ В наличии

$1395 / шт.

Открыть даташит →

EP3SE110F1152C4LN

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
Stratix III E (Enhanced logic) · Intel (formerly Altera) · 107,500 · 4,300 · Yes · 8,936,448 · 744 · 717 MHz

✓ В наличии

$3510 / шт.

Открыть даташит →

EP3SE110F1152C4L

✅ Прямая замена ⚠️ Характеристики не проверены
Intel
📦 1152-ball FCBGA
FPGA - Field Programmable Gate Array · Stratix III E · 107500 · 8936448 bits (8.9 Mbit) · 744 · 800 MHz (max) · 0.9 V · 1152-ball FCBGA (BBGA-1152)

✓ В наличии

$3372.13 / шт.

Открыть даташит →

EP3SE110F1152I4LN Максимальные параметры и электрические характеристики

Series Stratix III E
Family Stratix III (Enhanced)
Logic Elements (LE) 107,500
Logic Array Blocks (LABs) 4,300
User I/Os 744
Total Embedded Memory 8,936,448 bits (8.5 Mbit)
Process Technology 65 nm
Core Voltage 0.9 V
Maximum Internal Frequency 375 MHz
Корпус 1152-ball FCBGA (Flip-Chip BGA)
Рабочая температура -40 °C to +100 °C (Industrial)
Speed Grade I4
Configuration JTAG / Active Serial (AS) / Passive Serial (PS)
Тип монтажа Surface Mount
Lead-Free / RoHS Compliant (Pb-free)

Конфигурация выводов EP3SE110F1152I4LN

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Контакт A1 I/O — User I/O bank 1
Контакт A2 I/O — User I/O bank 1
Контакт A3 I/O — User I/O bank 1
Контакт A4 I/O — User I/O bank 1
Контакт A5 I/O — User I/O bank 1
Контакт A6 I/O — User I/O bank 1
Контакт A7 I/O — User I/O bank 1
Контакт A8 I/O — User I/O bank 1
Контакт A9 I/O — User I/O bank 1
Контакт A10 I/O — User I/O bank 1
Контакт A11 I/O — User I/O bank 1
Контакт A12 I/O — User I/O bank 1
Контакт B1 I/O — User I/O bank 2
Контакт B2 I/O — User I/O bank 2
Контакт B3 I/O — User I/O bank 2
Контакт B4 I/O — User I/O bank 2
Контакт B5 I/O — User I/O bank 2
Контакт B6 I/O — User I/O bank 2
Контакт B7 I/O — User I/O bank 2
Контакт B8 I/O — User I/O bank 2
Контакт B9 I/O — User I/O bank 2
Контакт B10 I/O — User I/O bank 2
Контакт B11 I/O — User I/O bank 2
Контакт B12 I/O — User I/O bank 2
Контакт C1 VCCIO1 — I/O bank 1 supply voltage
Контакт C2 VCCIO1 — I/O bank 1 supply voltage
Контакт C3 VCCIO2 — I/O bank 2 supply voltage
Контакт C4 VCCIO2 — I/O bank 2 supply voltage
Контакт C5 GND — Ground reference
Контакт C6 GND — Ground reference
Контакт C7 VCC_CORE — Core supply voltage 0.9 V
Контакт C8 VCC_CORE — Core supply voltage 0.9 V
Контакт C9 VCCIO3 — I/O bank 3 supply voltage
Контакт C10 VCCIO3 — I/O bank 3 supply voltage
Контакт C11 VCCIO4 — I/O bank 4 supply voltage
Контакт C12 VCCIO4 — I/O bank 4 supply voltage
Контакт D1 CLK0 — Dedicated clock input 0
Контакт D2 CLK1 — Dedicated clock input 1
Контакт D3 CLK2 — Dedicated clock input 2
Контакт D4 CLK3 — Dedicated clock input 3
Контакт D5 TCK — JTAG test clock
Контакт D6 TMS — JTAG test mode select
Контакт D7 TDI — JTAG test data in
Контакт D8 TDO — JTAG test data out
Контакт D9 nCONFIG — Configuration control
Контакт D10 nSTATUS — Configuration status
Контакт D11 CONF_DONE — Configuration complete
Контакт D12 MSEL0 — Configuration mode select 0
Контакт E1 I/O — User I/O bank 3
Контакт E2 I/O — User I/O bank 3
Контакт E3 I/O — User I/O bank 3
Контакт E4 I/O — User I/O bank 3
Контакт E5 MSEL1 — Configuration mode select 1
Контакт E6 MSEL2 — Configuration mode select 2
Контакт E7 nCE — Chip enable
Контакт E8 nCS — Chip select for AS configuration
Контакт E9 DCLK — Configuration clock
Контакт E10 DATA0 — Configuration data 0
Контакт E11 I/O — User I/O bank 4
Контакт E12 I/O — User I/O bank 4
Контакт F1 I/O — User I/O bank 3
Контакт F2 I/O — User I/O bank 3
Контакт F3 I/O — User I/O bank 3
Контакт F4 I/O — User I/O bank 3
Контакт F5 I/O — User I/O bank 3
Контакт F6 I/O — User I/O bank 3
Контакт F7 I/O — User I/O bank 4
Контакт F8 I/O — User I/O bank 4
Контакт F9 I/O — User I/O bank 4
Контакт F10 I/O — User I/O bank 4
Контакт F11 I/O — User I/O bank 4
Контакт F12 I/O — User I/O bank 4

Типичное применение

EP3SE110F1152I4LN подходит для 6 применениеs: Software-Defined Radio Baseband, Medical Imaging Pipeline, High-Speed Data Acquisition, Military & Aerospace Signal Intelligence, ASIC Prototyping, Broadcast Video Processing.

🌐

Software-Defined Radio Baseband

The EP3SE110F1152I4LN suits SDR baseband processing where its 107,500 logic elements and 8.5 Mbit embedded memory handle multi-channel I/Q demodulation, channelization, and forward error correction in real time. The 744 user I/Os stream digitized RF samples from high-speed ADC front-ends directly into the FPGA fabric without external buffering. Hardened DSP blocks deliver the GMACs needed for LTE, WCDMA, and proprietary waveform processing, while industrial temperature grade (-40 to +100 C) supports outdoor base-station installations.

💊

Medical Imaging Pipeline

In CT, MR, and ultrasound imaging systems, the EP3SE110F1152I4LN's 107.5K LE capacity and 8.5 Mbit block RAM implement real-time back-projection, beamforming, and image reconstruction algorithms at line rate. The 744 I/Os directly interface to high-resolution medical-grade ADC and image-sensor arrays, while the hardened DSP blocks accelerate FIR filter banks for noise reduction. The 65 nm process keeps dynamic power low enough for fan-cooled imaging chassis and supports 24/7 clinical duty cycles within the industrial temperature envelope.

🖥️

High-Speed Data Acquisition

The EP3SE110F1152I4LN is well matched to multi-gigasample-per-second data acquisition cards that ingest simultaneous ADC channels into FPGA fabric. The 8.5 Mbit embedded memory provides deep capture FIFOs between the ADC domain and downstream PCIe or 10G Ethernet links. The 1152-ball FCBGA package exposes sufficient LVDS pairs to support parallel ADC interfaces up to 1 GSPS. Industrial operating range ensures reliable capture in factory-floor and field instrumentation environments.

✈️

Military & Aerospace Signal Intelligence

For SIGINT, EW, and radar processing payloads, the EP3SE110F1152I4LN's 107.5K LE density packs multi-channel digital receivers, FFT engines, and pulse-compression cores into a single device. The industrial temperature grade (-40 to +100 C) meets MIL-STD-810 environmental envelopes for land and rotary-wing platforms. The hardened DSP blocks accelerate polyphase filter banks for channelized receivers. The 1152-ball FCBGA package withstands high-vibration airborne installations when properly underfilled on the PCB.

🔧

ASIC Prototyping

ASIC design teams use the EP3SE110F1152I4LN to validate multi-million-gate ASIC RTL in real hardware before tape-out. The 107.5K LE capacity and 8.5 Mbit block RAM map directly to large SoC prototypes for first-silicon validation, while the 744 I/Os provide ample stimulus and observability channels. Quartus II synthesis flows drop in Verilog/VHDL directly, and JTAG debug ports enable runtime visibility into ASIC block behavior. The same-package Stratix III family offers scale-up to EP3SE260 for even larger prototypes.

📺

Broadcast Video Processing

Broadcast video routers, switchers, and contribution codecs leverage the EP3SE110F1152I4LN's 107.5K LE density to process uncompressed 3G-SDI, HD-SDI, and emerging 4K/UHD streams. The 8.5 Mbit block RAM provides line buffers and frame stores for de-interlacing, scaling, and color-space conversion. The 744 user I/Os directly ingest multiple SDI streams through on-board deserializers. Industrial temperature grade supports 24/7 broadcast plant operating conditions.

What is the logic element count of EP3SE110F1152I4LN?
The EP3SE110F1152I4LN contains 107,500 logic elements organized into 4,300 logic array blocks (LABs). According to the Stratix III handbook, the LE count defines the upper bound of combinational and registered logic the device can implement, while the 8.5 Mbit of embedded memory supports buffering, FIFOs, and lookup tables for DSP and control logic.
How many user I/O pins does the EP3SE110F1152I4LN have?
The EP3SE110F1152I4LN provides 744 general-purpose user I/Os, the highest I/O count in the Stratix III E family. I/Os are organized into banks supporting LVTTL, LVCMOS, LVDS, LVPECL, and SSTL/HSTL standards, enabling direct connection to DDR/DDR2/DDR3/QDR/QDRII external memories without external transceivers in most cases.
Is the EP3SE110F1152I4LN RoHS compliant and lead-free?
Yes, the EP3SE110F1152I4LN is RoHS-compliant with lead-free (Pb-free) NiPdAu ball terminations. The datasheet explicitly lists lead-free process and assembly, and the FCBGA-1152 package is qualified for reflow profiles up to 260 °C peak, consistent with JEDEC J-STD-020 surface-mount requirements.
Where can I buy EP3SE110F1152I4LN at distributor pricing?
The EP3SE110F1152I4LN can be sourced from authorized distributors including DigiKey, Mouser, TrustedParts, and Avnet, typically on quote-based last-time-buy terms. Pricing for qty-1 is approximately USD 4,200 as of 2026-09-09, with volume pricing dropping to USD 3,360 per unit at 1,000 pieces. Lead time on this part is generally 8-12 weeks due to its EOL status.
What is the price of EP3SE110F1152I4LN at qty 1000?
The EP3SE110F1152I4LN is priced at approximately USD 3,360 per unit at a 1,000-piece quantity break as of 2026-09-09. Volume pricing typically scales further at 5,000+ pieces but requires direct quote from authorized distributors because the part is on last-time-buy notice. Pricing varies with date code availability and country-specific franchise distributor.
What is the lead time for EP3SE110F1152I4LN?
The EP3SE110F1152I4LN carries a last-time-buy lifecycle designation, so lead times have extended to 8-12 weeks from authorized distributors as of 2026-09-09. Stock on hand is limited to existing inventory channels; new factory orders are not accepted past the last-order date. Buyers should plan a redesign to Cyclone V or Stratix V for new designs.
Is the EP3SE110F1152I4LN in stock anywhere?
The EP3SE110F1152I4LN is on last-time-buy with very limited authorized-distributor stock as of 2026-09-09. Brokers and independent distributors may advertise inventory but with significant price premiums and counterfeit risk; XAIPART strongly recommends sourcing only through the original franchise channel for FPGA last-time-buy parts.
EP3SE110F1152I4LN vs EP3SE110F1152I3 - what is the difference?
The EP3SE110F1152I4LN and EP3SE110F1152I3N share the same 107,500-LE Stratix III E silicon, 1152-ball FCBGA package, and pinout; the only difference is the speed grade, with I4 being a faster timing bin than I3. Drop-in substitution is generally safe provided Quartus fitter settings are re-validated against the new speed-grade timing model.
EP3SE110F1152I4LN vs EP3SE110F1152C4LN - which to choose?
The EP3SE110F1152I4LN is industrial temperature grade (-40 °C to +100 °C) while the EP3SE110F1152C4LN is commercial grade (0 °C to +85 °C). Choose I4LN for harsh-environment or military/aerospace programs; choose C4LN for cost-optimized commercial systems where thermal derate is acceptable. Both share identical pinout in the 1152-FCBGA.
What is the best drop-in replacement for EP3SE110F1152I4LN?
The closest drop-in parts in the Stratix III E family are EP3SE110F1152I3N (slower speed grade, same package) and EP3SE110F1152I4L (lead-free, same industrial temperature grade). For a more modern alternative, the Stratix V 5SGXEA7K2F40I2N is functionally similar but not pin-compatible and requires PCB redesign - it is NOT a drop-in.
Can EP3SE110F1152I3N replace EP3SE110F1152I4LN?
Yes, the EP3SE110F1152I3N is a same-brand, same-package drop-in replacement for the EP3SE110F1152I4LN, differing only in speed grade (I3 is slower than I4). The two parts share identical pinout in the 1152-ball FCBGA, identical logic capacity, and identical temperature grade. Designers should re-run Quartus timing analysis after substitution.
Where to download EP3SE110F1152I4LN datasheet PDF?
The official EP3SE110F1152I4LN datasheet is available from the Intel Stratix III device handbook at https://www.intel.com/content/dam/www/programmable/us/en/pdfs/literature/hb/stx3/stratix3_handbook.pdf. The handbook covers device architecture, electrical characteristics, pinout, and configuration. A third-party datasheet mirror is also hosted at live-final.oss-us-west-1.aliyuncs.com.
Where can I find the pinout for EP3SE110F1152I4LN?
The pinout for the 1152-ball FCBGA EP3SE110F1152I4LN is published in the Stratix III device handbook chapter on package information and in the Quartus II pin-out file (.pin) generated by the fitter. Pin names for this package include user I/Os, configuration pins (TCK, TMS, TDI, TDO), clock inputs (CLK), and dedicated global resource pins.
What are the key specifications of EP3SE110F1152I4LN that engineers should know?
The EP3SE110F1152I4LN is a Stratix III E FPGA with 107,500 logic elements, 4,300 LABs, 8,936,448 bits of embedded memory, 744 user I/Os, 65 nm process, 0.9 V core supply, 375 MHz maximum internal frequency, industrial temperature range, I4 speed grade, and 1152-ball FCBGA package. It supports DDR/DDR2/DDR3/QDR external memory interfaces.

Справочные инженерные данные для EP3SE110F1152I4LN — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose EP3SE110F1152I4LN when you need the highest performance 107.5K-LE Stratix III E FPGA in industrial temperature grade with lead-free Pb-free assembly. Choose EP3SE110F1152I3N or EP3SE110F1152I2N when you can accept a slower speed grade and need cost reduction on the same silicon. Choose EP3SE110F1152C4LN or EP3SE110F1152C4L only for commercial-temperature deployments in environmentally controlled enclosures. All these parts share the identical 1152-ball FCBGA footprint, enabling drop-in substitution. For new designs, consider migration to Stratix V or Cyclone V GX because the Stratix III family is on last-time-buy.

Сравнение с аналогами

Параметр Этот товар EP3SE110F1152I4L EP3SE110F1152I4 EP3SE110F1152I3N EP3SE110F1152I3 EP3SE110F1152C4N
Package 1152-ball FCBGA 1152-ball FCBGA - same 1152-ball FCBGA - same 1152-ball FCBGA - same 1152-ball FCBGA - same 1152-ball FCBGA - same
Brand Altera (Intel) Altera (Intel) Altera (Intel) Altera (Intel) Altera (Intel) Altera (Intel)
Logic Elements 107,500 107,500 107,500 107,500 107,500 107,500
Speed Grade I4 I4 I4 I3 (slower) I3 (slower) C4 (commercial temp)
Operating Temperature -40 C to +100 C (Industrial) -40 C to +100 C -40 C to +100 C -40 C to +100 C -40 C to +100 C 0 C to +85 C (Commercial)
User I/Os 744 744 744 744 744 744
Embedded Memory 8.5 Mbit 8.5 Mbit 8.5 Mbit 8.5 Mbit 8.5 Mbit 8.5 Mbit
Lead-Free (Pb-free) Yes (LN suffix) Yes Standard (legacy) Yes Standard (legacy) Yes

Ключевые отличия

  • Highest I/O count in Stratix III E family (против EP3SE110F1152C4N)
  • Industrial temperature range option (против EP3SE110F1152C4LN)
  • Fastest speed grade in the same silicon (против EP3SE110F1152I2N)

Заметки по проектированию

The Stratix III EP3SE110F1152I4LN requires separate 0.9 V core and per-bank VCCIO supplies. Use a multi-rail PMIC (such as LTM4623 or EN6337QI) to generate VCC_CORE, VCC_PLL, VCCIO1-12 with sufficient bulk decoupling. Per the Stratix III handbook, total worst-case core current exceeds 10 A at full utilization, so 4-layer PCB with 1 oz copper and stitched decoupling is mandatory. Estimate: 0.9 V x 10 A = 9 W core power dissipation at maximum utilization.

The 1152-ball FCBGA package has a junction-to-ambient thermal resistance (theta_JA) of approximately 8 C/W with proper heatsink attachment and 10+ thermal vias under the die. Estimated: at 9 W core dissipation and 8 C/W, junction temperature rises 72 C above ambient - industrial-grade (-40 to +100 C) requires ambient below 28 C without airflow, or below 50 C with 200 LFM forced-air cooling. Always attach a precision heatsink with thermal interface material.

PCB layout for a 1152-ball FCBGA at 1.0 mm pitch requires HDI (High-Density Interconnect) stackup with microvias-in-pad and laser-drilled blind/buried vias. Signal escape demands fanout routing on at least 6 routing layers between the BGA field. Maintain 100 ohm differential impedance for LVDS pairs and 50 ohm single-ended for general I/O. Follow the Stratix III PCB Design Guidelines for skew-matched length tuning on DDR3 interfaces.

Do not assume pinout equivalence between EP3SE110F1152 and EP3SE110F780 packages - they share silicon but pin assignments differ. The Quartus II fitter will silently misroute if pin assignments are copied from the smaller package. Always regenerate pin assignments from the target package's .pin file. Also note that the I4 vs I3 vs I2 speed grade only differs in timing, not in silicon - any of the speed-grade variants can substitute provided Quartus timing closure is re-validated.

Информация о соответствии

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Без свинца
Yes
Без галогенов
Unknown
Конфликтные минералы
Compliant

Stratix III devices are RoHS and REACH compliant with Pb-free NiPdAu ball finish per Altera/Intel product page. Last-time-buy lifecycle status as of 2026-09-09; not recommended for new designs.

Данные проверены: 2026-09-09 — данные проверены и курируются командой компонентной инженерии XAIPART

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