ESD351DPYR - 30kV ESD Protection Diode, 0.1 Ohm | TI
Артикул: ESD351DPYR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.1454 | $0,15 |
| 10 | $0.1309 | $1,31 |
| 100 | $0.1091 | $10,91 |
| 500 | $0.0873 | $43,65 |
| 1.000 | $0.0727 | $72,70 |
ESD351DPYR Обзор
An ESD protection diode, also called a TVS (transient voltage suppressor) diode, is a semiconductor device that diverts fast electrostatic discharge and surge events away from sensitive ICs. It sits at the bottom of the circuit-protection hierarchy - below board-level surge suppressors and above nothing - acting as the last line of defense on high-speed signal lines. ESD protection devices are classified as discrete semiconductors within the broader TVS and surge protection category.
Key differentiating features of the ESD351 include the 0.1 ohm dynamic resistance, which is among the lowest available for a 0402-package ESD diode, delivering extremely low clamping voltage during a real IEC 61000-4-2 strike. The 1.8 pF line capacitance preserves signal integrity on high-speed interfaces, and the 3.3 V operating voltage suits modern low-voltage rails.
Technically, the ESD351 uses a snap-back-free deep-trench process that minimizes parasitic inductance and capacitance. The low R_DYN means the on-state voltage rise during a 16 A TLP event is only about 0.65 V above the breakdown knee, keeping residual clamp energy - and therefore IC stress - very low. This is critical because system-level ESD survivability correlates strongly with residual clamping voltage, not datasheet breakdown voltage alone.
Typical applications include USB 2.0 port protection, high-speed digital I/O on portable and wearable devices, and antenna or RF front-end line protection where capacitance must stay low.
Design consideration: place the ESD351DPYR within a few millimeters of the connector, before any series termination resistors, so the strike current is diverted at the board edge; every millimeter of trace adds inductance that raises effective clamping voltage.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для ESD351DPYR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с ESD351DPYR (тот же форм-фактор и посадочное место) — отличается по Clamping Voltage, Package, Peak Pulse Current (Ipp), Reverse Standoff Voltage.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ESD352DPYR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ESD353DPYR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ESD321DPYR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
TPD1E05U06DPYR
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
PESD5V0S1UB
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ESD351DPYR Максимальные параметры и электрические характеристики
| Type | Uni-directional TVS ESD protection diode |
| ESD Rating (IEC 61000-4-2) | 30 kV contact / 30 kV air |
| Dynamic Resistance (RDYN) | 0.1 ohm |
| Clamping Voltage | 6.5 V at 16 A TLP |
| Peak Pulse Current (Ipp) | 16 A |
| Junction Capacitance | 1.8 pF |
| Reverse Standoff Voltage | 3.3 V |
| Каналы | 1 |
| Корпус | 2-X1SON (DPY), 0402 footprint |
| Тип монтажа | Surface Mount |
| Applications | USB 2.0, high-speed digital I/O, RF line protection |
Конфигурация выводов ESD351DPYR
| Контакт 1 | ANODE (GND) — Anode / ground connection - divert path for ESD current |
| Контакт 2 | CATHODE (I/O) — Cathode - connects to the protected signal line |
Типичное применение
ESD351DPYR подходит для 6 применениеs: USB 2.0 Port Protection, Wearable and Mobile Device I/O, Portable Audio Headphone Jack Protection, Industrial Sensor Interface Protection, RF and Antenna Line Protection, Consumer Electronics HDMI-Adjacent and Button Line Protection.
USB 2.0 Port Protection
The ESD351DPYR is explicitly designed by Texas Instruments for USB 2.0 protection, combining a 1.8 pF junction capacitance with a 30 kV IEC 61000-4-2 rating and 6.5 V clamping at 16 A TLP. Placed directly at the USB connector on D+ and D- lines, the diode diverts ESD strikes to ground before they reach the USB transceiver. The low 0.1 ohm dynamic resistance means that during a real 8 kV contact strike, the residual voltage at the protected PHY stays low enough to prevent gate oxide damage. The 1.8 pF capacitance keeps USB 2.0 high-speed (480 Mbps) eye diagrams compliant without signal conditioning. TI recommends placing the device within a few millimeters of the connector with a short, wide ground return path to minimize added inductance.
Рекомендуется
Wearable and Mobile Device I/O
In smartphones, smartwatches, and wearables, every external connector is an ESD entry point, and board space is extremely scarce. The ESD351DPYR's 0402 (X1SON DPY) footprint occupies minimal PCB area, and its 3.3 V standoff voltage matches common battery-powered logic rails. The 30 kV contact and air rating handles the frequent human-body ESD events these devices experience in daily use. Because clamping voltage during a strike scales with dynamic resistance, the 0.1 ohm RDYN protects fragile PMIC and processor I/O cells that cannot tolerate high residual voltages. The 1.8 pF capacitance preserves signal timing on button, sensor, and accessory interface lines, and the uni-directional topology suits unipolar digital signaling common in these designs.
Рекомендуется
Portable Audio Headphone Jack Protection
Headphone jacks are among the most ESD-exposed nodes in portable electronics because users plug and unplug accessories constantly. The ESD351DPYR protects the left/right audio output lines with its 3.3 V standoff voltage covering line-level and biased-headset signals. The low clamping voltage ensures the codec's output amplifier survives repeated direct strikes to the jack. Its 1.8 pF capacitance is negligible at audio frequencies, so THD and frequency response are unaffected. In CTIA-style headset detection circuits, where the MIC line carries a bias voltage, the uni-directional characteristic cleanly clamps positive transients. TI's portable-media reference designs routinely place a per-line ESD diode of this class immediately at the jack contacts with a direct via to the ground plane.
Рекомендуется
Industrial Sensor Interface Protection
Factory automation and industrial sensor interfaces connect to long cables and field-wired connectors, making them frequent victims of ESD and cable-discharge events. The ESD351DPYR's 30 kV IEC 61000-4-2 rating and 16 A TLP current capability give substantial headroom on 3.3 V logic-level sensor buses such as SPI, I2C, and digital output lines. The low dynamic resistance is important here because industrial controllers often use sensitive MCU inputs with tight absolute-maximum ratings; a 0.1 ohm RDYN keeps residual clamp voltage below damage thresholds even at high strike currents. The tiny 0402 footprint allows protection to be added per-line at connector headers without expanding board area, and the uni-directional rating suits single-ended digital signaling.
Рекомендуется
RF and Antenna Line Protection
Antenna feed points and RF front-end inputs accumulate static charge, especially when systems use external antennas or touch-exposed enclosures. The ESD351DPYR's 1.8 pF capacitance is low enough for sub-GHz and low-band RF lines where modest shunt capacitance can be tuned out with the matching network, while its 30 kV rating protects the sensitive LNA input from direct strikes. TI's RF application guidance emphasizes that clamping voltage at the LNA is the figure of merit - the 0.1 ohm dynamic resistance of the ESD351 delivers a much lower residual voltage than generic TVS diodes with 1-3 ohm RDYN. For higher-frequency bands where even 1.8 pF is excessive, pair with or substitute an ultra-low-capacitance device from the same protection family.
Рекомендуется
Consumer Electronics HDMI-Adjacent and Button Line Protection
Consumer boards expose many secondary lines - buttons, LEDs, accessory detect, and configuration straps - that are touched or probed during manufacturing and use, each needing compact ESD protection. The ESD351DPYR provides per-line 30 kV protection at a very low cost point (around $0.15 in single quantity as of 2026-10-21), making per-line deployment economical even in cost-driven consumer designs. The 3.3 V standoff matches the majority of consumer logic rails, and the 1.8 pF capacitance is transparent on slow digital lines. During ESD test lab qualification to IEC 61000-4-2 level 4, the low clamping voltage prevents latch-up in neighboring CMOS circuitry, a common field-failure mode that per-line low-RDYN diodes directly mitigate.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ESD351DPYR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ESD352DPYR | ESD353DPYR | ESD321DPYR | PESD5V0S1UB |
|---|---|---|---|---|---|
| Package | 2-X1SON (DPY), 0402 footprint | 2-X1SON (DPY) - same | 2-X1SON (DPY) - same | 2-X1SON (DPY) - same | 2-X1SON (DPY) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Nexperia |
Ключевые отличия
- Ultra-low 0.1 ohm dynamic resistance (против PESD5V0S1UB)
- Lower working voltage for 3.3 V rails (против PESD5V0S1UB)
- Extremely low clamping in minimal footprint (против ESD321DPYR)
Заметки по проектированию
Place the ESD351DPYR as close to the board-edge connector as possible, before any series resistors or common-mode chokes, so strike current is diverted at the entry point. Keep the ground connection via as short and wide as practical - via inductance in series with the diode raises effective residual clamping voltage during fast ESD events. Use at least one solid via to the ground plane directly at the anode pad, and keep the protected trace on the cathode side short to the IC being protected.
Confirm the reverse standoff voltage (3.3 V) exceeds the maximum continuous voltage on the protected line, including ringing and bias voltages such as headset MIC bias. Using a diode with a standoff voltage too close to the line voltage causes leakage and partial conduction, degrading signal quality. Also verify polarity: the ESD351 is uni-directional, so it cannot be used on AC-symmetric or bipolar signal lines - a bi-directional device is required there.
The 1.8 pF junction capacitance of the ESD351DPYR adds shunt loading on high-speed lines. On USB 2.0 high-speed (480 Mbps) this is generally acceptable without compensation, but on faster interfaces account for the capacitance in impedance calculations: it lowers the effective trace impedance locally and can cause small reflections. Keep stub length to the diode minimal and, if needed, compensate with slight trace-width tuning on impedance-controlled routing.
Информация о соответствии
Compliance data not stated in the retrieved web data. Texas Instruments standard product is typically RoHS compliant; verify against the official TI product page before design-in.
