IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
Артикул: IAUS300N08S5N012T ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.85 | $168,50 |
| 100 | $14.2 | $1.420,00 |
| 500 | $12.4 | $6.200,00 |
| 1.000 | $10.95 | $10.950,00 |
IAUS300N08S5N012T Обзор
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages. MOSFETs belong to the transistor family within discrete semiconductors, and they are the fundamental building blocks of switched-mode power conversion. The IAUS300N08S5N012T sits in the 80 V N-channel subcategory and is specifically engineered for 48 V automotive systems including mild-hybrid powertrains, e-machines, DC-DC converters, and battery switches.
The device's headline parameter is its ultra-low R_DS(on) of 1.2 mΩ at V_GS = 10 V, which minimises conduction losses in high-current paths. The 300 A continuous drain current rating (current limited by bondwire, with the chip itself capable of carrying 400 A at 25 °C with R_thJC = 0.4 K/W) makes it well-suited to high-power switching nodes. The device is qualified to AEC-Q101 for automotive use, and the TOLT topside-cooled package offers a low thermal resistance path to a cold plate or heatsink.
Typical applications include 48 V traction inverters, 48 V DC-DC converters, 48 V battery main switches, high-current OR-ing circuits, and synchronous rectification in telecom and industrial power supplies. Its AEC-Q101 qualification also supports industrial-grade high-current switching where long-term reliability is required.
When designing with the IAUS300N08S5N012T, careful PCB layout is critical: minimise source-loop inductance, use a wide copper pour on the topside pad, and ensure the V_GS gate-drive voltage is firmly above the threshold with adequate gate-drive strength to avoid shoot-through.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for BOM decisions and second-source selection.
Аналоги без доработки для IAUS300N08S5N012T — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUS300N08S5N012T (тот же форм-фактор и посадочное место) — отличается по Package, Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUS300N08S5N012
✅ Прямая замена✓ В наличии
$3.88 / шт.
Открыть даташит →IAUS300N08S5N012TATMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IAUS300N08S5N012T Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | IAUS300N08S5N012T |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | 80 V |
| On-State Resistance (R_DS(on)) | 1.2 mΩ max @ V_GS = 10 V |
| Continuous Drain Current (I_D) | 300 A (Tj) |
| Power Dissipation (P_D) | 375 W (Tc) |
| Thermal Resistance Junction-to-Case (R_thJC) | 0.4 K/W |
| Maximum Chip Current | 400 A at 25°C (chip-limited) |
| Корпус | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Тип монтажа | Surface Mount |
| Channel Polarity | N-Channel |
| Automotive Qualification | AEC-Q101 qualified |
| Marking Code | 5N08012 |
| Статус RoHS | Compliant (per Infineon product page) |
Конфигурация выводов IAUS300N08S5N012T
| Контакт 1 | Source — Source terminal |
| Контакт 2 | Source — Source terminal |
| Контакт 3 | Source — Source terminal |
| Контакт 4 | Source — Source terminal |
| Контакт 5 | Source — Source terminal |
| Контакт 6 | Source — Source terminal |
| Контакт 7 | Source — Source terminal |
| Контакт 8 | Source — Source terminal |
| Контакт 9 | Gate — Gate drive input |
| Контакт 10 | Source — Source terminal |
| Контакт 11 | Source — Source terminal |
| Контакт 12 | Source — Source terminal |
| Контакт 13 | Source — Source terminal |
| Контакт 14 | Source — Source terminal |
| Контакт 15 | Drain — Drain terminal (top-side cooled) |
| Контакт 16 | Drain — Drain terminal (top-side cooled) |
Область безопасной работы (DC, Tj = 25°C)
Типичное применение
IAUS300N08S5N012T подходит для 6 применениеs: 48V Automotive Traction Inverter, 48V DC-DC Converter, 48V Battery Main Switch, High-Current OR-ing / Load Switch, Synchronous Rectifier in Telecom Power Supplies, Industrial High-Power Motor Drive.
48V Automotive Traction Inverter
The IAUS300N08S5N012T is engineered for 48 V mild-hybrid traction inverter switches. Its 1.2 mΩ maximum R_DS(on) at V_GS = 10 V minimises conduction loss in the high-current phase legs, while the 80 V V_DS rating provides generous transient headroom above the 48 V bus. The 300 A continuous drain current rating handles peak inverter loads, and the TOLT topside-cooled package enables direct attachment to a cold plate for sustained 375 W dissipation. In a typical 48 V e-machine inverter, two of these MOSFETs per phase minimise switching and conduction loss while meeting AEC-Q101 reliability.
Рекомендуется
48V DC-DC Converter
The IAUS300N08S5N012T serves as the primary synchronous rectifier or high-side switch in 48 V to 12 V or 48 V to 24 V DC-DC converters. Its ultra-low 1.2 mΩ R_DS(on) directly reduces I²R losses across hundreds of amps of switching current, improving converter efficiency by 1-2 percentage points compared to higher-R_DS(on) parts. The 80 V rating easily handles 48 V bus transients, and the AEC-Q101 qualification suits automotive under-hood environments. The topside-cooled TOLT package simplifies thermal design in dense converter modules where board space is constrained.
Рекомендуется
48V Battery Main Switch
For 48 V lithium-ion battery main disconnect and protection switches, the IAUS300N08S5N012T provides the high-current carrying capability and ultra-low resistance required for minimal voltage drop under full load. With 300 A continuous current and 1.2 mΩ R_DS(on), the device dissipates only 27 W at 150 A, eliminating active cooling in many designs. The 80 V rating handles series-battery stack voltages up to 14 cells, while AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.
Рекомендуется
High-Current OR-ing / Load Switch
In redundant 48 V power systems, the IAUS300N08S5N012T enables high-current OR-ing switches that combine two independent power sources with minimal loss. Its 1.2 mΩ R_DS(on) introduces only 0.3 V drop at 250 A, well within tolerance for most downstream regulators. The 80 V V_DS rating handles transient back-feed events, and the topside-cooled package simplifies heatsinking in high-density server and telecom power shelves.
Рекомендуется
Synchronous Rectifier in Telecom Power Supplies
For high-current 48 V telecom rectifier modules delivering 50-100 A at 12 V or 5 V outputs, the IAUS300N08S5N012T functions as the synchronous rectifier on the secondary side, replacing Schottky diodes and eliminating forward-voltage losses. The 1.2 mΩ R_DS(on) reduces rectification loss by 50-70% versus equivalent Schottky diodes at high currents, while the 80 V rating handles voltage spikes from the transformer leakage inductance. The TOLT topside-cooled package enables compact module designs.
Рекомендуется
Industrial High-Power Motor Drive
Beyond automotive, the IAUS300N08S5N012T fits industrial motor drives up to 30 kW operating from 48-72 V DC buses. Its 300 A current rating and 375 W power dissipation in the TOLT package support peak motor currents during acceleration, while AEC-Q101 qualification (which exceeds industrial requirements) ensures extended service life. Designers should provide adequate heatsinking via the topside pad and follow Infineon PCB layout guidelines for high-current switching.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUS300N08S5N012T — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUS300N08S5N012 | IAUS300N08S5N012TATMA1 |
|---|---|---|---|
| Package | PG-HDSOP-16-2 (TOLT) | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same |
| V_DS (Drain-Source Voltage) | 80 V | 80 V | 80 V |
| R_DS(on) max @ V_GS=10V | 1.2 mΩ | 1.2 mΩ | 1.2 mΩ |
| Continuous Drain Current | 300 A | 300 A | 300 A |
| Power Dissipation | 375 W (Tc) | 375 W (Tc) | 375 W (Tc) |
| Thermal Resistance R_thJC | 0.4 K/W | 0.4 K/W | 0.4 K/W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Ordering Code Suffix | T (tape & reel) | no suffix (base part) | TATMA1 (specific reel code) |
Ключевые отличия
- Ultra-low R_DS(on) at 80 V rating (против Standard 80 V MOSFETs in DPAK/TO-220)
- Topside-cooled TOLT package (против Bottom-cooled packages (DPAK, D2PAK))
- AEC-Q101 automotive qualification (против Industrial-grade only MOSFETs)
Заметки по проектированию
The TOLT package is designed for topside cooling - the drain pad is on top of the package for direct attachment to a heatsink or cold plate via a thermal interface material. With R_thJC = 0.4 K/W, the device can dissipate 375 W at Tc = 25°C. For a 48 V inverter switching 200 A continuous, conduction loss alone is P = I² × R_DS(on) = 200² × 0.0012 = 48 W. Designers should size the heatsink for a junction temperature below 150°C, and use thermal interface material rated for automotive temperature cycling (-40°C to +150°C).
PCB layout for high-current MOSFET switching must minimise source-loop inductance to prevent V_GS ringing and possible shoot-through. Place gate-drive components within 5 mm of the gate pin, use a ground return directly under the gate-drive signals, and keep the high-current source-drain loop area minimal. Use a 4-layer PCB with a solid ground plane on layer 2 directly under the source pins. For the topside-cooled package, ensure the PCB copper under the drain pad is solid and continuous to provide mechanical support.
Common pitfalls when using the IAUS300N08S5N012T include: (1) insufficient gate-drive voltage - V_GS must be at least 10 V to achieve the datasheet R_DS(on); (2) undersized gate-drive current - peak gate current must charge Q_G within the switching period, typically requiring a gate-driver with at least 2-4 A peak source/sink capability; (3) missing TVS protection on the gate - sensitive gates can be damaged by ESD or dV/dt-induced ringing; (4) failing to derate for ambient temperature - the 300 A rating is at Tc = 25°C and decreases significantly at higher case temperatures.
For 48 V automotive systems, follow Infineon's PCB layout guidelines for TOLT packages: use the full PCB copper area under the source pads as the high-current return path, place the gate-driver IC as close as possible to the gate pin (within 5 mm), and route the Kelvin-source connection (if available) directly to the gate-driver ground rather than the high-current source. The 80 V V_DS rating requires creepage and clearance per IPC-2221 for the working voltage, plus appropriate margin for pollution degree 3.
Информация о соответствии
AEC-Q101 qualified (automotive grade, supersedes AEC-Q100 for discrete semiconductors). RoHS and lead-free compliant per Infineon product page. REACH compliance confirmed.
