IAUS300N08S5N012T vs IAUS300N08S5N012 Сравнение
Подробное сравнение бок о бок IAUS300N08S5N012T от Infineon и IAUS300N08S5N012 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
IAUS300N08S5N012T ✓ АктивенInfineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ АктивенСравнение характеристик
| Параметр | IAUS300N08S5N012T | IAUS300N08S5N012 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $10,95 | $3,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUS300N08S5N012T | — |
| Technology | OptiMOS 5 | OptiMOS 5 planar trench |
| Drain-Source Voltage (V_DS) | 80 V | — |
| On-State Resistance (R_DS(on)) | 1.2 mΩ max @ V_GS = 10 V | — |
| Continuous Drain Current (I_D) | 300 A (Tj) | — |
| Power Dissipation (P_D) | 375 W (Tc) | — |
| Thermal Resistance Junction-to-Case (R_thJC) | 0.4 K/W | — |
| Maximum Chip Current | 400 A at 25°C (chip-limited) | — |
| Корпус | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-HSOG-8-1 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Polarity | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Marking Code | 5N08012 | — |
| Диапазон рабочих температур | [DATA_NEEDED: full min/max operating temperature range] | -55°C to +175°C |
| Статус RoHS | Compliant (per Infineon product page) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: typical threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: typical total gate charge] | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 300 A |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | — | 1.2 mΩ typical |
| Gate-Source Threshold Voltage VGS(th) | — | 3.8 V at 275 µA |
| Power Dissipation (PD) at TC | — | 375 W |
| Уровень MSL | — | MSL1 (up to 260°C peak reflow) |
| RoHS Compliance | — | RoHS compliant (Green product) |
| Avalanche Rating | — | 100% Avalanche tested |
| Terminals | — | 8 |