IAUTN04S7N005ATMA1 - 40V 0.44mΩ OptiMOS 7 N-MOSFET | Infineon
Артикул: IAUTN04S7N005ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.1 | $2,10 |
| 10 | $1.85 | $18,50 |
| 100 | $1.62 | $162,00 |
| 500 | $1.4 | $700,00 |
| 1.000 | $1.22 | $1.220,00 |
IAUTN04S7N005ATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switching power supplies, motor drives, and battery-management systems. The OptiMOS™7 family represents Infineon's latest-generation 40 V trench MOSFET process, positioned within the broader category of N-channel power MOSFETs, which themselves belong to the larger family of discrete semiconductors. Lower RDS(on) reduces conduction loss directly, while a smaller figure of merit (FOM = RDS(on) × Qg) reduces switching loss - both critical for high-frequency, high-current automotive designs.
Key features include an ultra-low on-state resistance of 0.44 mΩ (max) at VGS = 10 V, low gate charge optimized for high-frequency switching, an avalanche-rated single-pulse body diode, and an operating junction temperature range up to 175 °C. The PG-HSOF-8-8 package exposes the drain on the top side for direct cooling via an attached heatsink or PCB copper inlay, enabling very high current density in compact layouts.
The IAUTN04S7N005 uses Infineon's latest-generation 40 V OptiMOS™7 cell architecture, which delivers roughly a 30% RDS(on) reduction versus the previous OptiMOS™5 generation at the same die area. The TOLL (TO-Leadless) package eliminates the traditional leads and instead uses wide copper tabs, which simultaneously reduces package resistance, improves thermal impedance (junction-to-case), and minimizes parasitic inductance in high-di/dt switching loops.
Typical applications include 12 V/24 V automotive DC-DC converters (e.g., 48 V mild-hybrid buck stages), traction inverter auxiliary rails, e-mobility battery disconnect switches, electric power steering (EPS) controllers, and high-current OR-ing / load-switch circuits. The part is also well suited to industrial high-density point-of-load converters.
When designing with the IAUTN04S7N005, pay particular attention to PCB layout: minimize the high-di/dt loop (VIN → MOSFET → GND) by placing input capacitors and the MOSFET on the same copper layer with the shortest possible path. Use Kelvin-source connection where the gate-driver return attaches directly to the source tab, bypassing the source inductance. Maximum junction-to-ambient thermal resistance depends strongly on the PCB copper area beneath the exposed pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical layout guidance that complements the manufacturer's datasheet. Pricing reflects current stock across DigiKey, Mouser, and element14.
Аналоги без доработки для IAUTN04S7N005ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUTN04S7N005ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Automotive Qualification, Configuration, Technology, MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUCN04S7N005ATMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IAUAN04S7N005AUMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IAUCN04S7N005GATMA1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IAUCN04S7L050HATMA1
✅ Прямая замена✓ В наличии
$0.83 / шт.
Открыть даташит →IAUC60N04S6L030HATMA1
✅ Прямая замена✓ В наличии
$0.94 / шт.
Открыть даташит →IAUC120N04S6N010ATMA1
✅ Прямая замена✓ В наличии
$0.68 / шт.
Открыть даташит →IAUTN04S7N005ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™7 (40 V, Automotive) |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 350 A |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Рассеиваемая мощность (TC=25°C) | 218 W |
| Рабочая температура перехода | -55 °C to +175 °C |
| Корпус | PG-HSOF-8-8 (TOLL) 10 × 12 mm |
| Тип монтажа | Surface Mount |
| Configuration | Single N-Channel |
| Automotive Qualification | AEC-Q101 |
| Статус RoHS | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) |
Конфигурация выводов IAUTN04S7N005ATMA1
| Контакт 1 | Source (S) — Source pad, electrically common with pins 1-3 |
| Контакт 2 | Source (S) — Source pad |
| Контакт 3 | Source (S) — Source pad |
| Контакт 4 | Gate (G) — Gate control input |
| Контакт 5 | Source (S) — Source pad |
| Контакт 6 | Source (S) — Source pad |
| Контакт 7 | Source (S) — Source pad |
| Контакт 8 | Kelvin-Source (KS) — Kelvin-source connection for gate-driver return, minimizes source inductance |
| Контакт Top Tab | Drain (D) — Top-side exposed drain pad for cooling and high-current connection |
Область безопасной работы (DC, Tj=175°C)
Типичное применение
IAUTN04S7N005ATMA1 подходит для 6 применениеs: 48 V Mild-Hybrid DC-DC Buck/Boost Converter, Electric Power Steering (EPS) High-Current Switch, Traction-Inverter Auxiliary 12 V/24 V Rail, High-Current Battery Disconnect Switch (BDU), Industrial High-Current Point-of-Load (POL) Converter, Automotive eFuse / Smart High-Current OR-ing.
48 V Mild-Hybrid DC-DC Buck/Boost Converter
The IAUTN04S7N005ATMA1 is ideal for 48 V mild-hybrid DC-DC converter stages that step 48 V down to 12 V or boost 12 V to 48 V for energy-recovery systems. With 0.44 mΩ RDS(on) at 40 V VDS, 350 A ID, and AEC-Q101 automotive qualification, the part minimizes conduction loss across the high-current path while surviving load-dump transients on the 12 V bus. Placed as the synchronous rectifier on the low-voltage side or the primary switch on the high-voltage side, the OptiMOS 7 die delivers low Qg for high-frequency switching up to 250 kHz, enabling compact magnetics and high power density in 2-3 kW automotive converter modules. The top-side exposed drain pad of the TOLL package allows direct cooling via PCB copper inlay, supporting sustained high current without thermal throttling.
Рекомендуется
Electric Power Steering (EPS) High-Current Switch
The IAUTN04S7N005ATMA1 is well matched to the high-current MOSFET rails in electric power steering controllers, where the device switches currents up to several hundred amps to drive the assist motor. The 0.44 mΩ RDS(on) reduces I²R losses during peak assist events, improving overall steering system efficiency and reducing thermal load on the ECU housing. AEC-Q101 qualification validates long-term reliability under hood-temperature operation (-40 °C to +125 °C ambient, plus transient spikes). The PG-HSOF-8-8 TOLL package's small 10 × 12 mm footprint frees PCB area for motor-control MCUs and signal-conditioning circuitry, while the top-side drain tab enables direct thermal coupling to the EPS controller's metal chassis.
Рекомендуется
Traction-Inverter Auxiliary 12 V/24 V Rail
In traction inverters, the IAUTN04S7N005ATMA1 is deployed on the auxiliary low-voltage rails that power the gate drivers, sensors, and cooling pumps from the high-voltage bus. With 40 V VDS and 350 A current handling, it comfortably supports 12 V and 24 V automotive auxiliary supplies with margin for inductive transients. The OptiMOS 7 cell architecture provides low reverse-recovery charge (Qrr), which is critical when the MOSFET body diode commutates in dead-time intervals - minimizing shoot-through loss and EMI. AEC-Q101 qualification and 175 °C maximum junction temperature allow placement near the traction inverter's hot heatsink area. The TOLL package's top-side thermal pad supports direct cooling via shared PCB copper inlay with the main IGBT/SiC modules.
Рекомендуется
High-Current Battery Disconnect Switch (BDU)
The IAUTN04S7N005ATMA1 functions as a high-current battery disconnect unit (BDU) switch in 12 V/24 V battery management systems, where it interrupts the battery-to-load path during fault conditions and load-dump events. The 0.44 mΩ RDS(on) keeps steady-state voltage drop low even at 200-300 A continuous discharge, preserving battery energy and reducing heat dissipation. AEC-Q101 screening ensures the device survives the high-cycle-count and vibration environment of automotive battery packs. The PG-HSOF-8-8 TOLL package's low package resistance (Rth_JA ~ 0.5 °C/W on proper PCB layout) supports the surge-current handling required during pre-charge and capacitive load engagement without tripping thermal protection.
Рекомендуется
Industrial High-Current Point-of-Load (POL) Converter
Outside the automotive sector, the IAUTN04S7N005ATMA1 is well suited to industrial 48 V-to-12 V or 24 V-to-5 V point-of-load converters supplying AI accelerator cards, networking switches, and telecom base-station equipment. The 0.44 mΩ RDS(on) and 350 A ID translate directly to multi-kilowatt power stages in compact 1U/2U form factors, where board area is at a premium. The OptiMOS 7 platform's low Qg × RDS(on) figure-of-merit enables switching frequencies of 200-500 kHz, allowing smaller magnetics and output filters. For industrial designers willing to operate without AEC-Q101 screening, the IAUCN04S7N005ATMA1 variant offers identical electrical performance at typically lower cost.
Рекомендуется
Automotive eFuse / Smart High-Current OR-ing
The IAUTN04S7N005ATMA1 serves as the primary switch in automotive eFuse and active OR-ing circuits that combine redundant power sources (e.g., dual-battery 12 V/48 V rails). The MOSFET's 0.44 mΩ RDS(on) and 350 A continuous current rating provide the headroom needed for high-current OR-ing and rapid fault isolation. Low Qg supports fast (microsecond-scale) fault response when a short-circuit event is detected downstream, while AEC-Q101 qualification ensures long-term reliability in the harsh automotive environment. The TOLL package's small footprint enables dense eFuse PCB layouts where multiple parallel MOSFETs may be required for load-sharing or N+1 redundancy.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUTN04S7N005ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUCN04S7N005ATMA1 | IAUAN04S7N005AUMA1 | IAUCN04S7L050HATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-8 (TOLL) 10x12 mm | PG-HSOF-8-8 (TOLL) 10x12 mm - same | PG-HSOF-8-8 (TOLL) 10x12 mm - same | PG-HSOF-8-8 (TOLL) 10x12 mm - same | PG-HSOF-8-8 (TOLL) 10x12 mm - same | PG-HSOF-8-8 (TOLL) 10x12 mm - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 0.44 mΩ | 0.44 mΩ | 0.44 mΩ | 0.50 mΩ | 0.30 mΩ | 1.0 mΩ |
| Continuous Drain Current (ID) | 350 A | 350 A | 350 A | 300 A | 517 A | 120 A |
| Power Dissipation (Tc=25°C) | 218 W | 218 W | 218 W | 200 W | 150 W | 83 W |
| Process Generation | OptiMOS 7 (40 V) | OptiMOS 7 (40 V) | OptiMOS 7 (40 V) | OptiMOS 7 (40 V) | OptiMOS 6 (40 V) | OptiMOS 6 (40 V) |
| Automotive Grade (AEC-Q101) | Yes | No (industrial) | Yes (variant) | No (industrial) | No (industrial) | No (industrial) |
Ключевые отличия
- AEC-Q101 automotive qualification with same die as industrial-grade variant (против IAUCN04S7N005ATMA1 (industrial variant))
- Lowest RDS(on) in TOLL package at 40 V / 350 A (против IAUC120N04S6N010ATMA1 (older OptiMOS 6))
- Latest-generation OptiMOS 7 platform (против IAUC60N04S6L030HATMA1 (OptiMOS 6))
- Top-side exposed drain pad for direct cooling (против TO-263 (D2PAK) package MOSFETs)
Заметки по проектированию
The PG-HSOF-8-8 (TOLL) package's top-side exposed drain pad is critical for cooling. To achieve the datasheet's 218 W power dissipation capability, mount the part on a minimum 1 oz copper PCB area of 25 cm × 25 cm with thermal vias to inner copper planes. Estimated junction-to-ambient thermal resistance (Rth_JA) on a JEDEC 4-layer PCB is approximately 50 °C/W; with 1 inch² top-side copper heatsink, Rth_JA drops to ~25 °C/W. Maximum power dissipation must be derated linearly with junction temperature above 25 °C: P_D(max) = (175 °C - T_C) / Rth_JC.
Minimize the high-di/dt switching loop (input capacitor → drain → source → ground return) by placing the input decoupling capacitor as close as possible to the drain tab and source pads. Use Kelvin-source connection: route the gate-driver return directly to pin 8 (Kelvin-source) rather than to the power-source pads (1-3, 5-7), bypassing source-inductance-induced gate-voltage ringing. Gate-drive traces should be > 50 mil wide and routed away from drain switching nodes. With low Qg and high peak drain current, inadequate gate-drive damping can cause 30-50% overshoot on VDS - add a 5-10 Ω gate resistor to control dV/dt.
Do not exceed the ±20 V VGS absolute-maximum rating - exceeding this will damage the gate oxide. During turn-off, inductive voltage spikes on the drain can exceed 40 V VDS and avalanche the body diode; for safety-margin designs, add a TVS clamp or RC snubber (10 Ω + 1 nF) across the drain-source. Avoid paralleling multiple IAUTN04S7N005ATMA1 devices without sufficient source-inductance symmetry - paralleling requires matched gate-driver circuits and source resistors. Estimated parallel-current sharing tolerance is ±15% without Kelvin-source balancing.
Estimated conduction loss at 200 A continuous current is 200² × 0.44 mΩ = 17.6 W per MOSFET - significant for forced-air cooling. In buck-converter applications at 100 kHz switching frequency with 50% duty cycle, additional switching loss (using datasheet Qg × Vdrive × fsw approximation) is ~3-5 W. Total loss budget should target < 25 W per device to maintain Tj < 150 °C under worst-case ambient (85 °C).
Информация о соответствии
AEC-Q101 qualified (automotive discrete semiconductor stress test standard, equivalent reliability profile to AEC-Q100 for ICs). RoHS and REACH compliance confirmed by Infineon product page. Lead-free and halogen-free per PG-HSOF-8-8 datasheet mechanical specifications.
