IGC025S08S1XTMA1 - 80V GaN FET, 1.8mOhm PQFN 3x5 | Infineon
Артикул: IGC025S08S1XTMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.45 | $34,50 |
| 100 | $3.05 | $305,00 |
| 500 | $2.78 | $1.390,00 |
| 1.000 | $2.55 | $2.550,00 |
IGC025S08S1XTMA1 Обзор
A Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is a wide-bandgap power semiconductor that conducts electrons through a two-dimensional electron gas (2DEG) channel formed at an AlGaN/GaN heterojunction. Unlike silicon MOSFETs, GaN HEMTs have no body diode and therefore exhibit no reverse recovery charge (Qrr), making them ideal for hard-switched and half-bridge topologies. GaN transistors sit within the wider power-semiconductor hierarchy: GaN HEMT -> wide-bandgap semiconductor -> power transistor -> discrete semiconductor -> power management.
Key features of the IGC025S08S1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 23 A at TA (25 C ambient) and 86 A at TC (case), power dissipation of 3.3 W (TA) and 45 W (TC), and a threshold voltage of 2.9 V maximum at 10 mA. Its exposed-die PQFN package enables top-side cooling and very low thermal resistance, supporting high power density layouts. The part is offered on Tape & Reel (XTMA1 suffix).
Architecturally, the IGC025S08S1 uses a GaN-on-Si e-mode HEMT with an integrated gate structure that produces a normally-off characteristic without a cascode configuration, simplifying gate drive to a standard logic-level or 0-10 V drive. The result is a hard-switching figure of merit (FOM = RDS(on) x QG) more than 5x better than comparable silicon MOSFETs, which translates directly to lower switching losses, smaller magnetics, and higher system efficiency in compact power-conversion designs.
Typical applications include 48 V DC-DC converters for data-center and telecom intermediate bus converters, server and AI-accelerator point-of-load supplies, high-frequency Class-D audio amplifiers, USB-PD and notebook adapters, photovoltaic microinverters, motor drives, and on-board chargers for light electric vehicles. The combination of high switching frequency (1 MHz+) capability and small footprint makes the IGC025S08S1 especially attractive where power density and efficiency are primary design constraints.
When designing with this part, pay close attention to gate-drive layout - keep the gate-loop inductance below 1 nH by placing the gate driver within 5 mm of the gate pin and using a Kelvin-source connection where possible. Unlike Si MOSFETs, GaN HEMTs have no avalanche rating, so VDS transients must be clamped below 80 V with a low-inductance snubber or TVS.
This page consolidates distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes that complement - rather than duplicate - the Infineon manufacturer datasheet.
Аналоги без доработки для IGC025S08S1XTMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IGC025S08S1XTMA2
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IGC025S08S1-Q1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IGC024S08S1XTMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IGC025N08S7
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IGLD60R190D1S
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IGC025S08S1XTMA1 Максимальные параметры и электрические характеристики
| Technology | GaN HEMT (CoolGaN G3, e-mode, normally-off) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at TA | 23 A |
| Continuous Drain Current (ID) at TC | 86 A |
| Power Dissipation at TA | 3.3 W |
| Power Dissipation at TC | 45 W |
| On-State Resistance (RDS(on)) Typ | 1.8 mOhm |
| On-State Resistance (RDS(on)) Max @ ID, VGS | 2.5 mOhm @ 25 A, 5 V |
| Gate Threshold Voltage (VGS(th)) Max @ ID | 2.9 V @ 10 mA |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
| Корпус | PG-TSON-6-2 (PQFN 3x5) 6-pin |
| Тип монтажа | Surface Mount |
| Рабочая температура | -55 C to +150 C (TJ) |
| Статус RoHS | Compliant |
Конфигурация выводов IGC025S08S1XTMA1
| Контакт 1 | GATE — Gate input (drive with 5 V typical) |
| Контакт 2 | DRAIN (Sub) — Sub-drain / sense |
| Контакт 3 | SOURCE — Source connection |
| Контакт 4 | SOURCE — Source connection |
| Контакт 5 | SOURCE — Source connection |
| Контакт 6 | DRAIN — Main drain connection |
Область безопасной работы (DC, TC=25C)
Типичное применение
IGC025S08S1XTMA1 подходит для 6 применениеs: 48 V Intermediate Bus Converter (IBC) for Data Center, High-Frequency Class-D Audio Amplifier, USB-PD and Notebook Adapter (240 W EPR), Solar Microinverter / Optimizer, 48 V Mild-Hybrid / EV Auxiliary DC-DC Converter, Brushless DC (BLDC) Motor Drive.
48 V Intermediate Bus Converter (IBC) for Data Center
The IGC025S08S1XTMA1's 80 V VDS rating comfortably covers 48 V nominal buses (with margin for 60 V transients), while its 1.8 mOhm typical RDS(on) keeps full-load conduction losses below 25 W at 100 A primary current in a 1 kW IBC. Its zero Qrr eliminates the dead-time and reverse-recovery losses that penalize silicon MOSFETs at high frequency, enabling 1 MHz hard-switched LLC or bridgeless PFC topologies that shrink the bulk capacitor and transformer by 3-5x compared to legacy 100 kHz designs.
Рекомендуется
High-Frequency Class-D Audio Amplifier
GaN HEMTs like the IGC025S08S1XTMA1 eliminate the body-diode reverse recovery that causes dead-time distortion in Class-D amplifiers driven by silicon MOSFETs. With switching frequencies up to 1 MHz and a sub-2 nC total gate charge, this part enables ultra-low-THD audio designs (>110 dB SNR) while maintaining > 95% efficiency, reducing heatsink requirements compared to silicon solutions. The 80 V rating provides ample margin for +/-35 V audio rails in pro-audio and automotive amplifier applications.
Рекомендуется
USB-PD and Notebook Adapter (240 W EPR)
The IGC025S08S1XTMA1's CoolGaN technology enables > 27 W/inch3 power density in flyback or PFC + LLC USB-PD adapters targeting the 240 W Extended Power Range. Its 1.8 mOhm RDS(on) and sub-10 nC QG allow quasi-resonant (QR) flyback controllers to operate above 300 kHz, shrinking the transformer by ~40% versus silicon MOSFET designs. The exposed-die PQFN 3x5 package supports top-side cooling via a thermal pad directly under the adapter's existing heatsink, simplifying mechanical integration.
Рекомендуется
Solar Microinverter / Optimizer
For rooftop solar microinverters and DC power optimizers, the IGC025S08S1XTMA1 supports 80 V maximum input per device, which is more than sufficient when stacked for 60 V PV module strings. Its 1.8 mOhm RDS(on) reduces conduction loss in continuous-current paths, while the high switching frequency capability allows a smaller, lower-cost output inductor. The PQFN 3x5 footprint is compatible with high-density SMD assembly lines, important for cost-sensitive residential solar products where every mm of PCB matters.
Рекомендуется
48 V Mild-Hybrid / EV Auxiliary DC-DC Converter
The IGC025S08S1XTMA1 is qualified for 48 V mild-hybrid and EV auxiliary DC-DC converters that step 48 V down to 12 V for body-control modules, infotainment, and ADAS sensor rails. With 1.8 mOhm RDS(on) and a 45 W power dissipation rating at TC, it handles the 500 W to 2 kW power class in compact underhood enclosures. Pairing with the automotive-grade IGC025S08S1-Q1 variant provides AEC-Q100 qualification required by many OEM specifications.
Рекомендуется
Brushless DC (BLDC) Motor Drive
The IGC025S08S1XTMA1's zero reverse recovery charge makes it ideal for the hard-switched half-bridge stages of BLDC motor drives, particularly in low-voltage (24-48 V) drone, e-bike, and industrial robot applications. Switching at 100-500 kHz reduces audible torque ripple and shrinks the motor filter inductors. Its 80 V margin handles back-EMF spikes from aggressive motor deceleration, and the exposed-die package allows direct PCB copper heatsinking in compact integrated motor-control PCBs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IGC025S08S1XTMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IGC025S08S1XTMA2 | IGC025S08S1-Q1 | IGC024S08S1XTMA1 | IGC025N08S7 | IGLD60R190D1S |
|---|---|---|---|---|---|---|
| Package | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Technology | GaN HEMT (G3 e-mode) | GaN HEMT | GaN HEMT | GaN HEMT | GaN HEMT | Silicon MOSFET (CoolMOS) |
| VDS Max | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| RDS(on) Typ @ VGS=5V | 1.8 mOhm | 1.8 mOhm | 1.8 mOhm | 1.9 mOhm | 2.5 mOhm | 19 mOhm (silicon) |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC | Non-zero (silicon body diode) |
| Automotive (AEC-Q100) | No | No | Yes (AEC-Q100) | No | No | Check variant |
| Pricing (1 pc, USD) | 3.85 | ~3.85 | ~4.20 | ~3.80 | ~3.50 | ~2.10 |
Ключевые отличия
- Lowest RDS(on) in 80 V GaN PQFN 3x5 class (против IGC024S08S1XTMA1)
- Zero reverse recovery charge for hard-switched half-bridge (против IGLD60R190D1S)
- Automotive-qualified variant available in same footprint (против IGC025S08S1XTMA2)
Заметки по проектированию
Keep the gate-drive loop inductance below 1 nH by placing the gate driver within 5 mm of the GATE pin (pin 1) and using a wide, short return path over the SOURCE pad (pins 3-5). Use a Kelvin-source connection if the package allows - this separates the gate-driver return current from the main power current, preventing false turn-on caused by source-bounce inductance. Infineon's 2EDN8524FXTMA1 dual-channel driver is purpose-designed for this topology.
GaN HEMTs have no avalanche rating, so VDS transients must be clamped below 80 V under all switching conditions. A low-inductance snubber (1-2 nF ceramic + 1-2 ohm damping) or a TVS diode (e.g. SMBJ58A) across the drain-source is mandatory in hard-switched half-bridge topologies. Also note that exceeding the absolute maximum VGS of +/-10 V can permanently damage the gate dielectric - never use a generic 12 V silicon MOSFET gate driver with this part.
The exposed top-side die allows direct cooling via a thermal interface material (TIM) pad under a heatsink. For high-current designs (>50 A), use 4 oz copper on inner PCB layers and stitch thermal vias (0.3 mm pitch, filled) directly under the SOURCE/thermal pad to spread heat to the bottom copper plane. Estimated: at PD = 5 W continuous, junction-to-ambient thermal resistance of ~25 C/W (with 1 in^2 top-side heatsink) gives a 125 C junction temperature rise.
Информация о соответствии
Standard variant is not AEC-Q100 qualified - choose IGC025S08S1-Q1 for automotive. RoHS and REACH compliant per Infineon product page.
