IGC025S08S1XTMA1 - 80V GaN FET, 1.8mOhm PQFN 3x5 | Infineon
MPN: IGC025S08S1XTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.55 | $2,550.00 |
Drop-in alternatives for IGC025S08S1XTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IGC025S08S1XTMA2
β Drop-Inπ Reference alternative (not in catalog)
IGC025S08S1-Q1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IGC024S08S1XTMA1
β Drop-Inπ Reference alternative (not in catalog)
IGC025N08S7
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IGLD60R190D1S
β Drop-Inπ Reference alternative (not in catalog)
IGC025S08S1XTMA1 Maximum Ratings & Electrical Characteristics
| Technology | GaN HEMT (CoolGaN G3, e-mode, normally-off) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at TA | 23 A |
| Continuous Drain Current (ID) at TC | 86 A |
| Power Dissipation at TA | 3.3 W |
| Power Dissipation at TC | 45 W |
| On-State Resistance (RDS(on)) Typ | 1.8 mOhm |
| On-State Resistance (RDS(on)) Max @ ID, VGS | 2.5 mOhm @ 25 A, 5 V |
| Gate Threshold Voltage (VGS(th)) Max @ ID | 2.9 V @ 10 mA |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
| Package | PG-TSON-6-2 (PQFN 3x5) 6-pin |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) |
| RoHS Status | Compliant |
IGC025S08S1XTMA1 Pin Configuration
| Pin 1 | GATE β Gate input (drive with 5 V typical) |
| Pin 2 | DRAIN (Sub) β Sub-drain / sense |
| Pin 3 | SOURCE β Source connection |
| Pin 4 | SOURCE β Source connection |
| Pin 5 | SOURCE β Source connection |
| Pin 6 | DRAIN β Main drain connection |
Safe Operating Area (DC, TC=25C)
Typical Applications
IGC025S08S1XTMA1 is suitable for 6 applications: 48 V Intermediate Bus Converter (IBC) for Data Center, High-Frequency Class-D Audio Amplifier, USB-PD and Notebook Adapter (240 W EPR), Solar Microinverter / Optimizer, 48 V Mild-Hybrid / EV Auxiliary DC-DC Converter, Brushless DC (BLDC) Motor Drive.
48 V Intermediate Bus Converter (IBC) for Data Center
The IGC025S08S1XTMA1's 80 V VDS rating comfortably covers 48 V nominal buses (with margin for 60 V transients), while its 1.8 mOhm typical RDS(on) keeps full-load conduction losses below 25 W at 100 A primary current in a 1 kW IBC. Its zero Qrr eliminates the dead-time and reverse-recovery losses that penalize silicon MOSFETs at high frequency, enabling 1 MHz hard-switched LLC or bridgeless PFC topologies that shrink the bulk capacitor and transformer by 3-5x compared to legacy 100 kHz designs.
Recommended
High-Frequency Class-D Audio Amplifier
GaN HEMTs like the IGC025S08S1XTMA1 eliminate the body-diode reverse recovery that causes dead-time distortion in Class-D amplifiers driven by silicon MOSFETs. With switching frequencies up to 1 MHz and a sub-2 nC total gate charge, this part enables ultra-low-THD audio designs (>110 dB SNR) while maintaining > 95% efficiency, reducing heatsink requirements compared to silicon solutions. The 80 V rating provides ample margin for +/-35 V audio rails in pro-audio and automotive amplifier applications.
Recommended
USB-PD and Notebook Adapter (240 W EPR)
The IGC025S08S1XTMA1's CoolGaN technology enables > 27 W/inch3 power density in flyback or PFC + LLC USB-PD adapters targeting the 240 W Extended Power Range. Its 1.8 mOhm RDS(on) and sub-10 nC QG allow quasi-resonant (QR) flyback controllers to operate above 300 kHz, shrinking the transformer by ~40% versus silicon MOSFET designs. The exposed-die PQFN 3x5 package supports top-side cooling via a thermal pad directly under the adapter's existing heatsink, simplifying mechanical integration.
Recommended
Solar Microinverter / Optimizer
For rooftop solar microinverters and DC power optimizers, the IGC025S08S1XTMA1 supports 80 V maximum input per device, which is more than sufficient when stacked for 60 V PV module strings. Its 1.8 mOhm RDS(on) reduces conduction loss in continuous-current paths, while the high switching frequency capability allows a smaller, lower-cost output inductor. The PQFN 3x5 footprint is compatible with high-density SMD assembly lines, important for cost-sensitive residential solar products where every mm of PCB matters.
Recommended
48 V Mild-Hybrid / EV Auxiliary DC-DC Converter
The IGC025S08S1XTMA1 is qualified for 48 V mild-hybrid and EV auxiliary DC-DC converters that step 48 V down to 12 V for body-control modules, infotainment, and ADAS sensor rails. With 1.8 mOhm RDS(on) and a 45 W power dissipation rating at TC, it handles the 500 W to 2 kW power class in compact underhood enclosures. Pairing with the automotive-grade IGC025S08S1-Q1 variant provides AEC-Q100 qualification required by many OEM specifications.
Recommended
Brushless DC (BLDC) Motor Drive
The IGC025S08S1XTMA1's zero reverse recovery charge makes it ideal for the hard-switched half-bridge stages of BLDC motor drives, particularly in low-voltage (24-48 V) drone, e-bike, and industrial robot applications. Switching at 100-500 kHz reduces audible torque ripple and shrinks the motor filter inductors. Its 80 V margin handles back-EMF spikes from aggressive motor deceleration, and the exposed-die package allows direct PCB copper heatsinking in compact integrated motor-control PCBs.
Recommended
Recommended Products Summary
Engineering reference data for IGC025S08S1XTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGC025S08S1XTMA2 | IGC025S08S1-Q1 | IGC024S08S1XTMA1 | IGC025N08S7 | IGLD60R190D1S |
|---|---|---|---|---|---|---|
| Package | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Technology | GaN HEMT (G3 e-mode) | GaN HEMT | GaN HEMT | GaN HEMT | GaN HEMT | Silicon MOSFET (CoolMOS) |
| VDS Max | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Continuous Drain Current (TC) | 86 A | 86 A | 86 A | ~80 A | ~70 A | [DATA_NEEDED] |
| RDS(on) Typ @ VGS=5V | 1.8 mOhm | 1.8 mOhm | 1.8 mOhm | 1.9 mOhm | 2.5 mOhm | 19 mOhm (silicon) |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC | Non-zero (silicon body diode) |
| Automotive (AEC-Q100) | No | No | Yes (AEC-Q100) | No | No | Check variant |
| Pricing (1 pc, USD) | 3.85 | ~3.85 | ~4.20 | ~3.80 | ~3.50 | ~2.10 |
Key Differentiators
- Lowest RDS(on) in 80 V GaN PQFN 3x5 class (vs IGC024S08S1XTMA1)
- Zero reverse recovery charge for hard-switched half-bridge (vs IGLD60R190D1S)
- Automotive-qualified variant available in same footprint (vs IGC025S08S1XTMA2)
Design Notes
Keep the gate-drive loop inductance below 1 nH by placing the gate driver within 5 mm of the GATE pin (pin 1) and using a wide, short return path over the SOURCE pad (pins 3-5). Use a Kelvin-source connection if the package allows - this separates the gate-driver return current from the main power current, preventing false turn-on caused by source-bounce inductance. Infineon's 2EDN8524FXTMA1 dual-channel driver is purpose-designed for this topology.
GaN HEMTs have no avalanche rating, so VDS transients must be clamped below 80 V under all switching conditions. A low-inductance snubber (1-2 nF ceramic + 1-2 ohm damping) or a TVS diode (e.g. SMBJ58A) across the drain-source is mandatory in hard-switched half-bridge topologies. Also note that exceeding the absolute maximum VGS of +/-10 V can permanently damage the gate dielectric - never use a generic 12 V silicon MOSFET gate driver with this part.
The exposed top-side die allows direct cooling via a thermal interface material (TIM) pad under a heatsink. For high-current designs (>50 A), use 4 oz copper on inner PCB layers and stitch thermal vias (0.3 mm pitch, filled) directly under the SOURCE/thermal pad to spread heat to the bottom copper plane. Estimated: at PD = 5 W continuous, junction-to-ambient thermal resistance of ~25 C/W (with 1 in^2 top-side heatsink) gives a 125 C junction temperature rise.
Compliance Information
Standard variant is not AEC-Q100 qualified - choose IGC025S08S1-Q1 for automotive. RoHS and REACH compliant per Infineon product page.
