IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon
Артикул: IPD600N25N3GATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.15 | $575,00 |
| 1.000 | $0.98 | $980,00 |
| 3.000 | $0.84 | $2.520,00 |
IPD600N25N3GATMA1 Обзор
What is an N-channel MOSFET? An N-channel MOSFET (NMOS) is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage creates an n-type conduction channel between drain and source. MOSFETs sit within the hierarchy: power MOSFET -> discrete semiconductor -> power management component. The 250 V OptiMOS 3 family targets high-frequency switching applications where both low conduction loss (RDS(on)) and low switching loss (Qg) are essential to efficient SMPS design.
Key features include an excellent gate-charge x RDS(on) figure-of-merit (FOM), very low on-resistance RDS(on) of 60 mOhm maximum, 175 C maximum operating junction temperature, Pb-free lead plating, RoHS compliance, halogen-free compliance per IEC 61249-2-21, and JEDEC qualification for the target application. The 60 mOhm RDS(on) at 10 V VGS significantly reduces conduction losses versus older planar MOSFET generations.
The OptiMOS 3 technology uses an advanced trench gate structure that minimizes cell pitch while maintaining low gate charge, achieving a 40-50% RDS(on) reduction versus the previous OptiMOS 2 generation at the same voltage class. The DPAK (TO-252) package provides an industry-standard footprint with the tab acting as the drain connection, simplifying PCB layout and heatsink attachment. The 2+Tab pinout means gate, source, and a drain tab, all accessible from one face of the package for through-hole-style surface mounting.
Typical applications include synchronous rectification in 48 V telecom systems, primary-side switches in DC-DC converters, uninterruptable power supplies (UPS), inverters for DC motor drives, and high-frequency switched-mode power supplies. The part is also well suited to industrial SMPS where 200-250 V breakdown is required.
When designing with this device, ensure the gate driver can supply the specified gate charge at the desired switching frequency; under-sized gate drives cause partial turn-on and excessive switching loss. Thermal management through the drain tab is critical because most heat exits through the package lead. Always derate to stay below 175 C junction.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IPD600N25N3GATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPD600N25N3GATMA1 (тот же форм-фактор и посадочное место) — отличается по Technology, Series, Mounting Type, Package, Operating Temperature Range.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPD600N25N3 G
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPP600N25N3GXKSA1
✅ Прямая замена✓ В наличии
$1.62 / шт.
Открыть даташит →IPD60R1K0PFD7SAUMA1
✅ Прямая замена✓ В наличии
$0.36 / шт.
Открыть даташит →IPD60R600PFD7SAUMA1
✅ Прямая замена✓ В наличии
$0.45 / шт.
Открыть даташит →IPD60R600C6ATMA1
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →FDD250N25
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SiHU25N25E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPD600N25N3GATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Series | OptiMOS 3 |
| Тип транзистора | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc | 25 A |
| Power Dissipation (PD) at Tc | 136 W |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V |
| Рабочая температура перехода | -55 C to +175 C |
| Корпус | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Тип монтажа | Surface Mount (Tape & Reel) |
| Technology | OptiMOS 3 trench MOSFET |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| Без галогенов | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | Qualified for target application |
Конфигурация выводов IPD600N25N3GATMA1
| Контакт 1 | Gate — Gate drive input (10V VGS typical for full RDS(on)) |
| Контакт 2 | Source — Source connection (also tied to thermal tab in some variants) |
| Контакт 3 | Drain (Tab) — Drain connection via metal tab; primary thermal path |
Область безопасной работы (DPAK, Tc=25C)
Типичное применение
IPD600N25N3GATMA1 подходит для 6 применениеs: 48V Synchronous Rectification, DC-DC Converter Primary-Side Switch, Uninterruptable Power Supplies (UPS), DC Motor Drive Inverters, High-Frequency Switched-Mode Power Supplies, Telecom Brick Converters.
48V Synchronous Rectification
The IPD600N25N3GATMA1 fits 48 V synchronous rectification because its 250 V VDS provides ample headroom above 48 V rails while the 60 mOhm RDS(on) and low Qg minimize conduction and switching losses at the high frequencies typical of 48 V intermediate bus converters. Per Infineon's OptiMOS 3 family documentation, the part is purpose-built for 48 V telecom and datacom systems where efficiency and thermal density both matter. In a typical 48 V-to-12 V LLC topology, the MOSFET replaces lossy Schottky rectifiers to deliver 96%+ peak efficiency with substantial heatsink area savings.
Рекомендуется
DC-DC Converter Primary-Side Switch
In primary-side switching of 200-250 V input DC-DC converters (telecom bricks, industrial SMPS), the IPD600N25N3GATMA1's 250 V VDS rating, 60 mOhm RDS(on), and JEDEC qualification deliver robust performance. Per Infineon's datasheet, the part is qualified to JEDEC for the target application, ensuring long-term reliability in continuous-conduction-mode forward and flyback topologies. The OptiMOS 3 trench structure cuts switching loss versus planar MOSFET generations, enabling 100 kHz+ switching frequencies with reduced magnetics size.
Рекомендуется
Uninterruptable Power Supplies (UPS)
The IPD600N25N3GATMA1 serves as a robust switching element in UPS inverter and PFC stages where high efficiency at partial load extends battery runtime during outages. Per Infineon's product brief for the 250 V OptiMOS family, the part's excellent FOM (Qg x RDS(on)) and 175 C junction rating ensure reliable operation under harsh thermal cycling common in UPS environments. The DPAK footprint accepts standard clip-on heatsinks for the through-hole-style thermal path.
Рекомендуется
DC Motor Drive Inverters
In DC motor drive inverter bridges for industrial automation, the IPD600N25N3GATMA1's 250 V VDS supports 200 V DC-link buses with safety margin, while the 25 A continuous current handles sub-horsepower motor loads directly. Per Infineon's datasheet, the trench-gate OptiMOS 3 structure enables 20 kHz+ PWM switching for quieter motor operation versus 5-10 kHz IGBT alternatives. The DPAK package simplifies multi-phase PCB layouts with industry-standard land patterns.
Рекомендуется
High-Frequency Switched-Mode Power Supplies
In SMPS designs targeting 200-250 V input voltage for industrial and telecom applications, the IPD600N25N3GATMA1's 60 mOhm RDS(on) and low Qg directly reduce switching loss at 100-300 kHz operating frequencies. Per Infineon's OptiMOS 3 datasheet, this family is engineered for high-frequency switching where the FOM (Qg x RDS(on)) dominates efficiency. Compared to planar MOSFET generations, OptiMOS 3 enables smaller magnetic components and higher power density without sacrificing thermal margin.
Рекомендуется
Telecom Brick Converters
The IPD600N25N3GATMA1 fits telecom brick converters where 36-72 V input is converted to isolated 12 V or 48 V outputs at 1-3 kW power levels. Per Infineon's 250 V OptiMOS family documentation, the part's 250 V breakdown tolerates transient surges common in telecom bus environments while the 25 A continuous rating handles full-load conditions in full-bridge or push-pull topologies. The Pb-free, halogen-free, JEDEC-qualified die ensures compliance with NEBS and ETSI telecom reliability standards.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPD600N25N3GATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPD600N25N3 G | IPP600N25N3GXKSA1 | IPD60R600C6ATMA1 | FDD250N25 | SiHU25N25E |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | onsemi (cross-brand) | Vishay Intertechnology (cross-brand) |
| Drain-Source Voltage (VDS) | 250 V | 250 V | 250 V | 600 V | 250 V | 250 V |
| On-Resistance RDS(on) at VGS=10V | 60 mOhm max | 60 mOhm max | 60 mOhm max | ~600 mOhm | ~60 mOhm | ~60 mOhm |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +150 C | -55 C to +150 C | -55 C to +175 C |
| RoHS / Halogen-Free Compliance | Pb-free, RoHS, halogen-free per IEC 61249-2-21 | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS |
| Technology Family | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | CoolMOS C6 | onsemi trench MOSFET | Vishay E-Series trench |
Ключевые отличия
- Lowest FOM in 250 V-class DPAK footprint (против older planar MOSFET generations)
- JEDEC-qualified for target application (против FDD250N25 (onsemi))
- Wide operating temperature range to +175 C (против IPD60R600C6ATMA1 (150 C max))
Заметки по проектированию
The DPAK package dissipates heat primarily through the drain tab. Estimated: at 25 A continuous and 60 mOhm RDS(on), conduction loss is P = I^2 x R = 37.5 W. With a JEDEC-standard 4-layer PCB, theta_JA is approximately 50 C/W (depending on copper area), yielding a junction temperature rise of ~93 C above ambient - well within the 175 C max. For continuous 25 A operation, attach the DPAK tab to at least 1 square inch of top-side copper or use a clip-on heatsink. Always verify Tj in your application with the datasheet's Zth curves.
Use a wide, short drain-trace copper pour connected directly to the tab pad for primary heat removal. Per Infineon's application notes, place the gate drive resistor (typically 10-100 ohm) close to the gate pin to suppress parasitic oscillation. Keep the source-return loop tight to minimize source inductance; use a kelvin source connection if available in your gate driver circuit.
Do not exceed 250 V VDS - avalanche breakdown above this threshold destroys the die. Do not exceed 175 C junction temperature. The OptiMOS 3 part is NOT a logic-level MOSFET; ensure the gate driver delivers at least 10 V VGS for full RDS(on) - a 3.3 V or 5 V logic signal will leave the MOSFET in partial turn-on with massive conduction loss. Check the gate-source threshold voltage in the datasheet to confirm your driver has margin at cold temperatures.
Maintain at least 4 mm clearance between drain traces and low-voltage signal traces to prevent arcing during transient events. Per JEDEC JESD22-A114 standards referenced in the Infineon datasheet, the part is qualified for industrial environments but should still benefit from conformal coating in humid conditions.
Информация о соответствии
Pb-free lead plating, RoHS compliant, halogen-free per IEC 61249-2-21, JEDEC-qualified for industrial target application. Not AEC-Q100 qualified (automotive).
