IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon
Артикул: IPP600N25N3GXKSA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.62 | $26,20 |
| 100 | $2.18 | $218,00 |
| 500 | $1.86 | $930,00 |
| 1.000 | $1.62 | $1.620,00 |
IPP600N25N3GXKSA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals in power electronics. Within the discrete semiconductor hierarchy, MOSFETs sit below thyristors and IGBTs in voltage class for high-frequency applications, and are subclassed into N-channel and P-channel types by current-carrier polarity. N-channel MOSFETs generally offer lower on-resistance per unit area than equivalent P-channel parts, which is why this part is preferred on the low-side of half-bridges and as the main switch in buck/boost converters.
Key features of this part include 250 V drain-source breakdown voltage, 60 mOhm maximum static on-resistance (VGS = 10 V), 25 A continuous drain current at case temperature, and a TO-220-3-1 through-hole footprint with a metal tab that doubles as the drain connection and a thermal mounting surface. The OptiMOS 3 process technology reduces gate charge Qg and figures of merit (FOM = RDS(on) x Qg) compared with earlier planar generations, which directly translates to lower switching losses at 100 kHz and above.
Internally, the device uses a trench-gate vertical DMOS structure on an N+ substrate, with the source metallization on the top side and the drain on the back side bonded to the TO-220 tab. This vertical layout is what allows the 250 V rating and the 25 A current capability in such a small package. The gate is oxide-isolated, so it draws essentially no DC current; switching transitions are controlled by the gate driver's ability to source and sink charge into the gate-source capacitance.
Typical applications for the IPP600N25N3GXKSA1 include 48 V synchronous rectification in telecom and server DC-DC converters, primary-side switches in industrial SMPS, low-side switches in half-bridge motor drives, and freewheeling diodes (with appropriate body-diode derating) in UPS inverters. The 250 V rating gives comfortable margin on 48 V, 60 V, and 72 V bus rails.
When designing with this MOSFET, ensure the gate driver can supply at least 10 V VGS for full enhancement and verify that switching losses (estimated using Qg and the switching frequency) do not push junction temperature above 175 C. The TO-220 tab should be mounted to a heatsink or substantial copper pour for any continuous current above ~5 A.
This page synthesizes distributor pricing, drop-in alternatives sourced from Infineon's OptiMOS 3 family and from cross-brand parametric equivalents, and practical thermal and gate-drive design notes that are not found in the manufacturer datasheet alone.
Аналоги без доработки для IPP600N25N3GXKSA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPP600N25N3GXKSA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Drain-Source Voltage (VDS), Mounting Type, Manufacturer.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPP600N25N3G
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IPP075N15N3GXKSA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.92 / шт.
Открыть даташит →IPI600N25N3GXKSA1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
STW45NM50
✅ Прямая замена✓ В наличии
$9.5455 / шт.
Открыть даташит →IRF640NPBF
✅ Прямая замена✓ В наличии
$0.88 / шт.
Открыть даташит →IPP600N25N3GXKSA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc=25C | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V |
| Power Dissipation (PD) at Tc=25C | 136 W |
| Корпус / Типоразмер | TO-220-3 (PG-TO220-3-1) |
| Тип монтажа | Through Hole |
| Диапазон рабочих температур | -55C to +175C (junction) |
| Lead Free Status | Lead Free / RoHS Compliant |
| Число выводов | 3 (Gate, Drain, Source) |
Конфигурация выводов IPP600N25N3GXKSA1
| Контакт 1 | Gate (G) — Gate control input - apply VGS = 10V to fully enhance |
| Контакт 2 | Drain (D) — Drain terminal (also connected to the metal tab on TO-220) |
| Контакт 3 | Source (S) — Source terminal and power return |
Область безопасной работы (DC, continuous)
Типичное применение
IPP600N25N3GXKSA1 подходит для 6 применениеs: 48V Synchronous Rectification in Telecom/Server DC-DC Converters, Industrial SMPS Primary-Side Switch, DC Motor Drive Inverter Half-Bridge, Uninterruptable Power Supply (UPS) Inverter Stage, Solar Inverter DC-DC Boost Stage, Battery Management and Protection Switch.
48V Synchronous Rectification in Telecom/Server DC-DC Converters
The IPP600N25N3GXKSA1 is widely used as the low-side synchronous rectifier MOSFET in 48V-input isolated DC-DC converters for telecom and server power supplies. Its 250V VDS rating comfortably covers 48V nominal with 80V transient margin, while the 60 mOhm RDS(on) at 10V VGS keeps conduction losses manageable at 15-25A secondary-side currents. Compared to planar MOSFETs, the OptiMOS 3 trench process reduces Qg and Qgd, which lowers switching losses at 100-300 kHz and improves overall converter efficiency by 0.5-1.0%. Recommended companion parts: 1ED020I12B2XUMA1 (single-channel isolated gate driver), 2ED21064S06JXUMA1 (half-bridge gate driver).
Рекомендуется
Industrial SMPS Primary-Side Switch
As the primary-side main switch in industrial switched-mode power supplies (SMPS) up to about 150W, the IPP600N25N3GXKSA1 handles 250V rectified mains (220VAC nominal) with sufficient margin for transient spikes. Its 136W power dissipation at 25C case, combined with a TO-220 heatsink, supports continuous operation in CCM PFC and flyback topologies. The OptiMOS 3 technology provides low output capacitance Coss and reduced switching losses at 65-100 kHz, making it attractive for high-density industrial PSU designs. Recommended companions: ICE3RBR1765JGXUMA1 (PWM controller), TLD5097EPXUMA1 (LED driver / buck controller).
Рекомендуется
DC Motor Drive Inverter Half-Bridge
The IPP600N25N3GXKSA1 can serve as the low-side switch in half-bridge and full-bridge inverters driving DC motors from 48V to 120V DC bus rails. Its 250V rating tolerates regen-induced overshoot, while 25A continuous and 60 mOhm on-resistance support motor currents up to 15A without exceeding thermal limits on a properly sized heatsink. Pairing with the IRS21867STRPBF high/low-side gate driver enables reliable PWM at 20 kHz, beyond audible range, for smooth torque control in traction and industrial motor applications. Body-diode recovery is acceptable for hard-switched half-bridge operation at moderate frequencies.
Рекомендуется
Uninterruptable Power Supply (UPS) Inverter Stage
In online UPS systems, the IPP600N25N3GXKSA1 is used in the inverter stage that converts battery DC (typically 48V or 192V string) to AC mains. The 250V rating allows direct use on 192V battery strings without complex voltage translation, while the OptiMOS 3 low FOM (RDS(on) x Qg) minimizes inverter switching losses and extends runtime during battery operation. Its TO-220 package is straightforward to heatsink in the densely packed UPS enclosure, and parallel operation is feasible for higher-current 3-5 kVA units with proper gate-source resistor balancing.
Рекомендуется
Solar Inverter DC-DC Boost Stage
For solar micro-inverters and string inverters, the IPP600N25N3GXKSA1 can act as the boost switch raising panel voltage (typically 30-60V) to a 200-400V DC bus for inversion. Its 250V rating handles the boost stage output during MPPT transitions, and the low RDS(on) keeps efficiency above 97% at the converter's continuous operating power. Combined with a TLD1125ELXUMA1 LED driver variant or TLE92633BQXXUMA2 power supply IC, this MOSFET supports compact MPPT stage designs with reliable thermal management.
Рекомендуется
Battery Management and Protection Switch
In 48V battery management systems (BMS), the IPP600N25N3GXKSA1 acts as the main disconnect switch and pre-charge MOSFET, where its 250V rating handles transient flyback from inductive loads and its 60 mOhm RDS(on) keeps full-load voltage drop below 1.5V at 25A. The low gate charge enables fast turn-off in fault conditions with a simple gate driver, providing reliable short-circuit protection when paired with an IPD80R600P7ATMA1-based current-sense chain or BTS710336ESAXUMA1 smart switch for low-side auxiliary control.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPP600N25N3GXKSA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPP600N25N3G | IPP075N15N3GXKSA1 | IPI600N25N3GXKSA1 | STW45NM50 | IRF640NPBF |
|---|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3-1) | TO-220-3 (PG-TO220-3-1) - same | TO-220-3 - same footprint | TO-220-3 FullPAK (insulated) - same footprint | TO-220-3 - same | TO-220-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | Infineon Technologies |
| Drain-to-Source Voltage (VDS) | 250 V | 250 V | 150 V (-40%) | 250 V | 500 V (+100%) | 200 V (-20%) |
| RDS(on) max @ VGS=10V | 60 mOhm | 60 mOhm | 7.5 mOhm (much lower, lower VDS) | 60 mOhm | 70 mOhm (higher) | 150 mOhm (higher) |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | MDmesh (ST, planar-strip) | HEXFET (planar) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Ключевые отличия
- OptiMOS 3 trench technology gives low Qg x RDS(on) FOM (против STW45NM50)
- Higher continuous drain current than comparable 200V Infineon IR series (против IRF640NPBF)
- Higher VDS rating in the same TO-220 footprint (против IPP075N15N3GXKSA1)
Заметки по проектированию
Estimated: at 25A continuous conduction with RDS(on)=60 mOhm, conduction loss = I^2 x R = 25 x 25 x 0.060 = 37.5 W. With TO-220 thermal resistance from junction to case of about 1.0 C/W and a typical junction-to-ambient of 62 C/W (no heatsink), the junction would rise 37.5 x 62 = 2325 C above ambient without heatsinking, far exceeding 175 C maximum. A small clip-on heatsink with thermal resistance below 5 C/W (case-to-ambient), combined with thermal interface material, is required for any continuous current above about 5 A. Mount the TO-220 tab with the mounting screw torqued to 0.5-0.7 N*m for consistent thermal contact.
The TO-220 package requires a 2.54 mm (0.1 inch) hole spacing footprint with hole diameters of 1.0-1.3 mm. The mounting hole for the tab should be 3.5-3.7 mm to clear the M3 screw shoulder. Provide 1 oz copper pour on both sides of the PCB connected to the Source pin to act as a heatsink and ground return; for higher currents use 2 oz copper or stitch vias to inner copper planes. Keep the gate drive trace short (<20 mm) and route it away from the drain-source switching node to avoid dv/dt-induced Miller turn-on.
Do not operate the IPP600N25N3GXKSA1 with VGS below 8V - the gate threshold VGS(th) is typically 2-4V and the part is only fully enhanced above 8V, with RDS(on) guaranteed at VGS=10V. Driving from a logic-level 3.3V or 5V signal through a weak pull-up will leave the MOSFET in the linear region, causing severe overheating. Use a dedicated gate driver IC such as 1ED020I12B2XUMA1 or 2ED21064S06JXUMA1 with at least 1A peak source/sink capability. Add a 10-100 ohm gate resistor to dampen ringing and prevent parasitic turn-on from Miller coupling.
The OptiMOS 3 process provides a low Qg that helps switching speed, but the resulting high di/dt combined with parasitic source inductance (typically 5-10 nH in a TO-220 lead) can produce voltage overshoot on the gate-source waveform. Place the gate driver as close as possible to the TO-220 pins, use a Kelvin connection to the Source lead if available (pin 3 tab), and add a small ferrite bead or 10 ohm resistor in the gate drive path to control ringing. For 48V synchronous rectification, the body-diode reverse recovery can be improved by adding a small antiparallel Schottky diode (e.g., 30V/10A) in continuous conduction mode.
Информация о соответствии
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade part. Halogen-free status not explicitly stated in the source data and is therefore listed as unknown.
