IRF5305PBF - 55V P-Ch HEXFET MOSFET 31A TO-220 | Infineon
Артикул: IRF5305PBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.12 | $11,20 |
| 100 | $0.78 | $78,00 |
| 500 | $0.62 | $310,00 |
| 1.000 | $0.51 | $510,00 |
IRF5305PBF Обзор
A P-Channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel conducts when the gate is pulled below the source potential. P-Channel devices sit at the top of a high-side switch (source at the load supply, drain at the load) and simplify gate-drive circuitry when the system logic ground equals the load ground. Within the broader semiconductor taxonomy, the IRF5305PBF belongs to: power MOSFET -> discrete semiconductor -> power management semiconductor. As a 'P-Channel complement' to the popular N-Channel IRF540N, it enables push-pull half-bridge and synchronous-rectifier topologies using a single ground-referenced gate drive.
Key features include a low typical RDS(on) of 60 mOhm at VGS = -10V, avalanche-rated energy (EAS) per the HEXFET ruggedness spec, fast switching thanks to low Qg and Qgd, and an industry-standard TO-220AB outline with the gate, drain, and source pins on the tab, tab, and 3-pin row respectively. The 'PBF' suffix confirms lead-free (Pb-free) terminal plating compliant with RoHS.
Architecturally, the IRF5305PBF uses Infineon's planar HEXFET cell structure with a vertical DMOS die, allowing high current density and avalanche capability. The through-hole TO-220AB tab provides a low thermal resistance path (~1.0 C/W junction-to-case) so the device can dissipate 110W at TC = 25C with appropriate heatsinking.
Typical applications include high-side switching in 12V/24V automotive and industrial systems, DC motor direction control (H-bridge), load switching and OR-ing, power OR-ing for redundant supplies, and buck/boost converters where a P-Channel high-side switch is preferred for simplicity. The -55V rating gives wide margin for 24V and 40V industrial buses.
When designing with the IRF5305PBF, ensure the gate is pulled fully to at least -10V relative to the source to achieve the rated on-resistance; a logic-level MOSFET is preferable if the driver swings only to -5V. Always heatsink the tab for continuous currents above a few amperes and respect the SOA at high VDS.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IRF5305PBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF5305PBF (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Total Gate Charge (Qg), Lead-Free / RoHS, Continuous Drain Current (ID) at TC=25C.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF5305STRLPBF
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →IRF5305STRRPBF
✅ Прямая замена✓ В наличии
$0.62 / шт.
Открыть даташит →IRFR5305TRLPBF
✅ Прямая замена✓ В наличии
$0.38 / шт.
Открыть даташит →IRFR5305TRPBF
✅ Прямая замена✓ В наличии
$0.32 / шт.
Открыть даташит →IRF4905PBF
✅ Прямая замена✓ В наличии
$0.95 / шт.
Открыть даташит →FQP47P06
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
FQP50P06
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF5305PBF Максимальные параметры и электрические характеристики
| FET Type | P-Channel |
| Drain-to-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A |
| Maximum Power Dissition (PD) at TC=25C | 110 W |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) |
| Total Gate Charge (Qg) | 42 nC (typical) |
| Рабочая температура перехода | -55C to +175C |
| Корпус | TO-220AB (through-hole, 3-pin + tab) |
| Тип монтажа | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) |
| Статус RoHS | Compliant |
| Technology | HEXFET (planar DMOS) |
Конфигурация выводов IRF5305PBF
| Контакт 1 | Gate — MOSFET gate; controls channel conduction |
| Контакт 2 | Drain — MOSFET drain; load connection (P-Channel: drains current from source) |
| Контакт 3 | Source — MOSFET source; tied to higher-potential supply rail (P-Channel) |
| Контакт TAB | Drain — Metal tab electrically connected to pin 2 (drain); provides thermal mounting surface |
Область безопасной работы (DC, TJ=25C)
Типичное применение
IRF5305PBF подходит для 6 применениеs: High-Side Load Switch in 12V/24V Automotive, H-Bridge DC Motor Direction Control, Power OR-ing for Redundant Supplies, PWM Speed Control for DC Fans, Battery Reverse-Polarity Protection, Buck/Boost Converter High-Side Switch.
High-Side Load Switch in 12V/24V Automotive
The IRF5305PBF is well suited as a high-side load switch in 12V and 24V automotive systems where the P-Channel topology eliminates the need for a charge pump or bootstrap high-side driver. With -55V VDS it provides more than 2x margin over a 24V industrial bus and handles -31A continuous current at TC=25C, sufficient for driving lamps, solenoids, and motor loads. Typical implementation places the IRF5305PBF between the 12V/24V supply and the load, with the source tied to the supply rail, the drain to the load, and the gate pulled to ground (logic-low turns on) via a small gate resistor of 10-100 Ohm. The 60 mOhm RDS(on) at -10V VGS keeps conduction losses manageable, and the 42 nC gate charge allows PWM dimming up to several kHz directly from a microcontroller GPIO through a discrete BJT or MOSFET gate driver.
Рекомендуется
H-Bridge DC Motor Direction Control
The IRF5305PBF is commonly deployed as the high-side switch in H-bridge motor direction-control circuits, paired with N-Channel MOSFETs (such as the IRF540N) on the low side. The P-Channel high-side design lets the gate be driven from the same ground-referenced 0-10V PWM signal used for the low-side N-Channel, simplifying the gate-driver stage. With -31A continuous rating and 110W power dissipation, the IRF5305PBF can drive medium-power DC motors up to several hundred watts at 12V or 24V. The HEXFET avalanche-rated design absorbs the back-EMF energy during motor commutation when paired with proper freewheeling diodes, and the ruggedness of the TO-220AB package provides the thermal headroom needed for repetitive motor-startup surges where peak current may exceed three times the steady-state value.
Рекомендуется
Power OR-ing for Redundant Supplies
The IRF5305PBF is a strong choice for power OR-ing in redundant power-supply systems where two or more input rails must feed a common load with reverse-current blocking. Connected source-to-supply, drain-to-load, with the gate pulled to ground, the device turns on only when its source is at the highest potential; if a competing supply rises higher the device self-biases off because its VGS rises above the threshold. The 60 mOhm RDS(on) keeps forward voltage drop low - around 0.6V at 10A - and the -55V rating gives wide margin for 24V and 48V telecom/datacom OR-ing architectures. For high-current (>30A) redundant systems, two IRF5305PBF devices in parallel share the load thanks to positive RDS(on) temperature coefficient that aids current sharing.
Рекомендуется
PWM Speed Control for DC Fans
The IRF5305PBF works effectively as a high-side PWM switch for brushed-DC fan speed control in industrial enclosures, 3D printers, and server cooling systems. P-Channel high-side switching keeps the fan's negative terminal at system ground, eliminating ground loops and radiated EMI that complicate low-side switching. The 42 nC gate charge allows PWM frequencies up to 25 kHz, well above the audible range, for silent fan operation; the device is fully enhanced at VGS=-10V, easily produced by a microcontroller GPIO through a small BJT level-shifter or a dedicated gate-driver IC. At a typical fan current of 1-3A the conduction loss in the 60 mOhm RDS(on) is negligible (<0.2W), and the TO-220AB tab can be left unheatsinked or attached to a small clip-on heatsink.
Рекомендуется
Battery Reverse-Polarity Protection
The IRF5305PBF can implement a low-loss reverse-polarity protection circuit for 12V lead-acid or lithium battery systems, replacing a Schottky diode and saving up to 1W of dissipation at 10A load. Wired source-to-battery, drain-to-load, with the gate tied to ground through a resistor and protected by a Zener to VGS(max)=20V, the MOSFET conducts in the forward direction and self-biases off if the battery is reversed. The 60 mOhm RDS(on) at -10V VGS gives a forward drop of only -0.6V at 10A, dramatically reducing wasted heat compared to a diode. The -55V VDS also withstands load-dump transients common in 12V automotive systems (which can briefly reach 40V), making the IRF5305PBF a robust choice for battery-protection designs.
Рекомендуется
Buck/Boost Converter High-Side Switch
The IRF5305PBF functions as the high-side switch in non-isolated buck and boost converters, particularly in 12V-input automotive or industrial systems. The P-Channel high-side topology eliminates the bootstrap capacitor and high-side gate-drive circuitry required by an N-Channel high-side switch, simplifying the design. With -55V VDS, -31A peak current handling, and 42 nC total gate charge, the IRF5305PBF supports switching frequencies up to 100 kHz in moderate-power converters (50-200W). The HEXFET avalanche rating (EAS) absorbs the energy stored in the inductor and output capacitance during switch turn-off, contributing to converter reliability. Designers should heatsink the TO-220AB tab to keep junction temperature below 125C for long-term reliability under continuous switching loads.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF5305PBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF5305STRLPBF | IRFR5305TRLPBF | IRF4905PBF | FQP47P06 | FQP50P06 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | onsemi |
| Package | TO-220AB through-hole | D2PAK (TO-263) SMD | DPAK (TO-252) SMD | TO-220AB through-hole (same) | TO-220AB through-hole (same) | TO-220AB through-hole (same) |
| Drain-to-Source Voltage (VDS) | -55 V | -55 V (same) | -55 V (same) | -55 V (same) | -60 V (+9%) | -60 V (+9%) |
| Continuous Drain Current (ID) | -31 A | -31 A (same) | -31 A (same) | -74 A (+139%) | -47 A (+52%) | -50 A (+61%) |
| On-Resistance RDS(on) at VGS=-10V | 60 mOhm (typical) | 60 mOhm (same) | 60 mOhm (same) | 20 mOhm (-67%) | 26 mOhm (-57%) | 22 mOhm (-63%) |
| Total Gate Charge (Qg) | 42 nC | 42 nC (same) | 42 nC (same) | 180 nC (+329%) | 110 nC (+162%) | 120 nC (+186%) |
| Maximum Power Dissipation | 110 W | 3.8 W (SMD package, much lower) | 2.5 W (SMD package, much lower) | 200 W (+82%) | 120 W (+9%) | 120 W (+9%) |
| RoHS Compliant | Yes (PBF suffix) | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 100, USD, as of 2026-09-13) | $0.78 | $1.05 | $0.85 | $1.65 | $0.95 | $1.10 |
Ключевые отличия
- Industry-standard TO-220AB P-Channel HEXFET with widest cross-brand drop-in support (против onsemi FQP47P06)
- Through-hole TO-220AB package allows higher continuous power dissipation than SMD equivalents (против IRF5305STRLPBF (D2PAK))
- Lower gate charge (42 nC) simplifies gate-driver design versus higher-current alternatives (против IRF4905PBF)
Заметки по проектированию
Estimated: at continuous -10A load with VGS=-10V, conduction loss is roughly I^2 * RDS(on) = 100 * 0.060 = 6W. The TO-220AB package has typical RthJC of ~1.0 C/W, so junction temperature rise above the case is ~6C, but junction-to-ambient RthJA without a heatsink is ~62 C/W, giving a ~372C rise above 25C ambient - far exceeding the 175C limit. A heatsink with RthSA < 5 C/W is required; alternatively a clip-on heatsink with thermal compound on the tab will suffice. Estimate inputs: I=-10A, RDS(on)=60 mOhm, TA=25C, RthJA=62 C/W (no heatsink).
When using the through-hole TO-220AB package, ensure the mounting hole has at least 3mm clearance around the tab for proper heatsink mounting and electrical isolation. Use a mica or silicone insulator pad between the tab and the heatsink if the heatsink is grounded, or mount the heatsink floating with thermal epoxy. For SMD variants (D2PAK/DPAK), ensure the drain-pad copper area on the PCB is at least 1 square inch (645 mm^2) to spread heat; without adequate copper the SMD package cannot dissipate the same power as the through-hole version.
Do not exceed the maximum VGS of ±20V - even brief transients above this can puncture the gate oxide. Add a 10-20V Zener diode from gate to source (with cathode at gate) for protection against inductive transients on the gate-driver line. Also note that the IRF5305PBF is NOT logic-level: driving the gate with -5V (logic low of a 5V system) leaves the device in linear region with very high RDS(on); ensure the gate driver pulls to at least -10V for full enhancement. Finally, the body diode of the IRF5305PBF is relatively slow - for high-frequency switching applications add an external Schottky or fast-recovery diode in parallel with the body diode.
Minimize the gate-loop and drain-loop inductance by keeping the gate-driver trace short and direct, and using a ground plane under the source pin. Use a 10-100 Ohm gate resistor to damp ringing on the gate waveform; this resistor also limits peak gate current from the driver. For high-current applications keep the source and drain copper pours wide (at least 50 mils per ampere) and use 2 oz copper if possible. Place any input/output decoupling capacitors as close to the source/drain pins as the package geometry allows.
Информация о соответствии
PBF suffix confirms lead-free (Pb-free) plating compliant with EU RoHS Directive. REACH compliance per Infineon product declaration. Halogen-free status not stated in available data. Not AEC-Q100 qualified (industrial/consumer grade). Conflict-minerals compliance per Infineon policy.
