IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon
MPN: IRF5305STRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
Drop-in alternatives for IRF5305STRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF5305SPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF5305STRR
✅ Drop-In📋 Reference alternative (not in catalog)
IRF5305STRL
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR5305TRLPBF
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IRF5305STRLPBF Maximum Ratings & Electrical Characteristics
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A |
| RDS(on) max at VGS=-10V | 60 mOhm |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Maximum Power Dissition at Tc | 110 W |
| Maximum Power Dissipation at TA | 3.8 W |
| Package | TO-263 / D2PAK (surface mount) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (fifth generation), IR MOSFET |
| Packaging | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) |
IRF5305STRLPBF Pin Configuration
| Pin 1 | Gate — Gate drive input; referenced to Source; logic-level compatible with 5V and 3.3V |
| Pin 2 | Drain — Drain terminal; electrically connected to the metal tab/back pad for heatsinking |
| Pin 3 | Source — Source terminal; reference for gate drive and return path for load current |
| Pin Tab | Drain — Back-tab metal pad connected to Drain; solder to PCB copper pour for thermal dissipation |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRF5305STRLPBF is suitable for 6 applications: Battery Protection & Power-Path Management, High-Side Load Switching for Motors and Solenoids, Reverse-Polarity Protection Circuit, DC-DC Converter High-Side Switch, Power ORing for Redundant Supplies, Portable and Battery-Powered Tools.
Battery Protection & Power-Path Management
The IRF5305STRLPBF is widely used as the high-side P-channel disconnect MOSFET in single-cell and multi-cell Li-ion battery management systems, where its -55V VDS, -31A continuous drain current, and logic-level VGS(th) enable both over-current protection and reverse-polarity blocking from a 5V microcontroller GPIO. Its 60 mOhm R_DS(on) results in only 60 mV drop at 1A load and approximately 1.8V drop at 30A, preserving battery run-time in portable tools, e-bikes, and UPS modules. The D2PAK tab dissipates heat directly into the PCB copper pour, eliminating an external heatsink in compact handheld designs.
Recommended
High-Side Load Switching for Motors and Solenoids
In 12V and 24V automotive/industrial loads, the IRF5305STRLPBF drives DC motors, solenoids, relays, and valve coils from the high side, eliminating ground-loop issues and allowing low-side current sensing with a simple shunt. Per the Infineon datasheet the device is avalanche-rated (UIS tested) and exhibits a soft-recovery body diode, both critical for inductive loads that generate back-EMF spikes when switched off. The -55V VDS rating also provides substantial transient margin against 24V bus load-dump events up to 35V.
Recommended
Reverse-Polarity Protection Circuit
The IRF5305STRLPBF serves as an ideal reverse-polarity protection (RPP) device when placed in series with the supply rail and oriented with Source toward the load: under correct polarity the gate is pulled to ground through a resistor, fully enhancing the P-channel and dropping only I*R_DS(on). Under reversed polarity the gate-source becomes reverse biased, the MOSFET stays off, and the load is protected within microseconds. The 60 mOhm R_DS(on) is far lower than a Schottky-diode drop, improving efficiency by 3-5% in 12V systems where diode-based RPP would otherwise dissipate 0.4V x I.
Recommended
DC-DC Converter High-Side Switch
The IRF5305STRLPBF can be used as the high-side P-channel switch in buck-derived and inverting DC-DC converter topologies where the input voltage is below 55V. Its low gate charge of approximately 42-63 nC (per distributor listings) keeps switching losses modest at frequencies up to 100 kHz, while the 110W TC-rated dissipation supports sustained operation at moderate duty cycles. The logic-level VGS(th) allows direct PWM drive from a 5V controller without a gate-driver IC.
Recommended
Power ORing for Redundant Supplies
In redundant 12V/24V supply architectures, two IRF5305STRLPBF devices wired source-to-source form a low-loss diode-OR circuit that replaces traditional ORing Schottky diodes, reducing forward drop from ~0.4V to ~60 mV at full load and improving efficiency by 3-4% in telecom and server backplane applications. The device's -55V rating provides ample headroom above 24V nominal bus voltages with transient margin for hot-swap events.
Recommended
Portable and Battery-Powered Tools
The IRF5305STRLPBF is a strong fit for 18V-36V cordless tools, e-bike controllers, and other portable battery-powered systems where its -55V VDS, -31A continuous ID, and logic-level VGS(th) provide direct microcontroller drive without a charge pump. The 60 mOhm R_DS(on) keeps conduction losses low enough that the device can be used on 1-2 square inches of FR4 copper without external heatsinking for typical 5-10A continuous loads.
Recommended
Recommended Products Summary
Engineering reference data for IRF5305STRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF5305SPBF | IRF5305STRR | IRF5305STRL | IRFR5305TRLPBF |
|---|---|---|---|---|---|
| Package | TO-263 / D2PAK (SMT) | TO-263 / D2PAK (SMT) - same | TO-263 / D2PAK (SMT) - same | TO-263 / D2PAK (SMT) - same | D-PAK / TO-252 (smaller, NOT pin-compatible with D2PAK) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A | -31 A | -31 A | -31 A | -31 A (D-PAK derates lower due to smaller tab) |
| RDS(on) max at VGS=-10V | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm | 60 mOhm |
| Total Gate Charge (Qg) | 42-63 nC (varies by distributor listing) | 42-63 nC | 42-63 nC | 42-63 nC | 42-63 nC |
| Maximum Power Dissipation at TC | 110 W | 110 W | 110 W | 110 W | 110 W (but smaller package derates power in practice) |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) | Yes | No (SnPb finish) | Yes |
| Packaging Format | Tape & Reel (left orientation) | Tube | Tape & Reel (right orientation) | Tape & Reel (non-Pb-free) | Tape & Reel (D-PAK) |
Key Differentiators
- Tape-and-reel orientation suffix (TRL vs TRR) (vs IRF5305STRR)
- Lead-free (Pb-free) finish (vs IRF5305STRL)
- Larger D2PAK thermal mass vs D-PAK (vs IRFR5305TRLPBF)
Design Notes
Estimated: at VGS=-10V, VDS=-30V, ID=-10A continuous on the D2PAK tab with a 1-square-inch FR4 copper pour (theta_JA approximately 50 C/W), the junction temperature rise above ambient is approximately 10A x 0.060 Ohm x 50 C/W = 30 C. For continuous operation above 15A, expand the PCB copper area to at least 4 square inches or attach an external heatsink to keep Tj below 150 C. The datasheet thermal-resistance curves and SOA graph must be consulted for the specific application duty cycle.
The D2PAK drain tab is electrically connected to the Drain pin; the PCB copper pad beneath the tab must be sized both for current carrying (at minimum 60 mOhm x I_load conduction loss budget) and for thermal dissipation. Use at least 2 oz copper on the drain pad and stitch thermal vias to the opposite-side ground plane. Place the gate-drive resistor (typically 10-100 ohm) within 5 mm of pin 1 to suppress parasitic-oscillation ringing during fast switching transitions.
Do not exceed VGS ratings of +/- 20V absolute maximum - use a 10V-15V Zener gate-source clamp when the gate is driven by a long cable or inductive path. For P-channel high-side switching, ensure the load is referenced between Source and ground (not Drain and ground), otherwise the gate-drive becomes non-trivial. The body diode has a modest reverse-recovery charge - if used in a half-bridge, pair with a fast-recovery or Schottky freewheel diode to minimize dead-time losses.
Compliance Information
Pb-free PBF suffix confirms RoHS-compliant lead-free plating. Not AEC-Q100 qualified as standard; for automotive grade contact Infineon about IRF5305STRLPBF-A variants. Reach and conflict-mineral statements per Infineon's product compliance page.
