IRF7313TRPBF - Dual N-Channel 30V 6.5A MOSFET SO-8 | Infineon
Артикул: IRF7313TRPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.75 | $0,75 |
| 10 | $0.62 | $6,20 |
| 100 | $0.48 | $48,00 |
| 500 | $0.38 | $190,00 |
| 1.000 | $0.31 | $310,00 |
| 3.000 | $0.27 | $810,00 |
IRF7313TRPBF Обзор
A dual N-channel MOSFET array belongs to the discrete MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, which sits within the broader power semiconductor taxonomy (MOSFET -> power transistor -> discrete semiconductor). It is widely used as a building block for synchronous switching, load switching, and small motor control where space is at a premium. Generation V (Gen V) IR MOSFETs use advanced trench process technology to deliver lower RDS(on) per unit silicon area than legacy planar devices.
Key features include a low on-resistance of 29 mOhm maximum at VGS=10V, a logic-level gate drive compatibility threshold (VGS(th) in the 1V-2.5V range), fully avalanche-rated silicon, and a dual-die common-source connection. The SO-8 package exposes the drain tab for both MOSFETs via the standard 8-pin land pattern, providing excellent thermal coupling to PCB copper. The Pbf suffix indicates lead-free, RoHS-compliant termination plating.
The IRF7313TRPBF's Generation V process technology achieves lower gate charge (Qg) and reduced Miller plateau voltage compared to its predecessors, which reduces switching losses at high frequencies. This makes the part well suited to DC-DC converter synchronous rectifiers on the low-side switch position and small brushless DC (BLDC) motor half-bridges up to a few hundred kHz. The avalanche rating gives designers headroom against inductive kickback in motor and solenoid applications.
Typical applications include DC-DC buck converters in notebook and server power rails, battery protection and load switching in portable equipment, low-voltage synchronous rectifiers on the secondary side of isolated power supplies, and small motor drivers for fans, pumps, and toys. Its SO-8 footprint and 30V rating align with 12V and 19V bus architectures commonly used in computing and telecom systems.
When designing with the IRF7313TRPBF, ensure the gate drive swing reaches at least 4.5V at the gate pin for full enhancement and minimum RDS(on). Use wide PCB copper pours on pins 5/6/7/8 (drain tabs) to keep junction temperature within the 150C maximum rating. Place a gate-source resistor of 10k to 100k ohms on each gate to prevent unwanted turn-on from dv/dt coupling.
This page synthesizes current distributor pricing, parametric drop-in alternatives, and practical PCB design notes beyond what is shown in the manufacturer's datasheet. All specifications are extracted from the official Infineon IRF7313 datasheet and verified against DigiKey and Mouser listings as of 2026-09-10.
Аналоги без доработки для IRF7313TRPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF7313TRPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Package, Operating Temperature Range, Configuration, Manufacturer.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF7313PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AUIRF7313Q
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
NTMFS4934N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
Si4910DY
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI4914DY
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7389TR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7313TRPBF Максимальные параметры и электрические характеристики
| Manufacturer | Infineon (formerly International Rectifier) |
| Part Number | IRF7313TRPBF |
| Technology | IR MOSFET Generation V (HEXFET Fifth Generation) |
| Transistor Configuration | Dual N-Channel (Independent) |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) max | 6.5 A per channel |
| On-Resistance (RDS(on)) max | 29 mOhm at VGS=10V |
| Power Dissipation (PD) max | 2 W |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (typical range) |
| Диапазон рабочих температур | -55C to +150C (junction) |
| Корпус | 8-pin SOIC (SO-8) surface mount |
| Тип монтажа | Surface Mount |
| Lead-Free / Pbf | Yes (lead-free plating) |
| Avalanche Rated | Yes |
| Уровень MSL | 1 |
| Qualification Standard | Consumer market (per IR datasheet) |
| Shipping Media | Tape & Reel (TRPBF suffix) |
Конфигурация выводов IRF7313TRPBF
| Контакт 1 | G1 — Gate of Q1 (N-channel MOSFET 1) |
| Контакт 2 | S1 — Source of Q1 (N-channel MOSFET 1) |
| Контакт 3 | S1 — Source of Q1 (N-channel MOSFET 1, second source pin) |
| Контакт 4 | G2 — Gate of Q2 (N-channel MOSFET 2) |
| Контакт 5 | D2 — Drain of Q2 / Drain tab (N-channel MOSFET 2) |
| Контакт 6 | D2 — Drain of Q2 / Drain tab (N-channel MOSFET 2) |
| Контакт 7 | D1 — Drain of Q1 / Drain tab (N-channel MOSFET 1) |
| Контакт 8 | D1 — Drain of Q1 / Drain tab (N-channel MOSFET 1) |
Область безопасной работы (DC)
Типичное применение
IRF7313TRPBF подходит для 8 применениеs: Synchronous Rectifier in 12V Buck Converters, Notebook and Server VRM Power Rails, Battery Protection and Load Switching in Portable Devices, Low-Voltage BLDC and Brushed Motor Half-Bridges, Secondary-Side Synchronous Rectifier in Isolated Power Supplies, Automotive 12V/24V Load Switching and Lighting, E-Fuse and Hot-Swap Controllers for Distributed Power, Industrial PLC Logic-Level Switching Relays.
Synchronous Rectifier in 12V Buck Converters
The IRF7313TRPBF serves as a low-side synchronous rectifier in non-isolated buck converters operating from a 12V or 19V bus. Its 29 mOhm RDS(on) at VGS=10V keeps conduction losses under 200 mW per channel at 5A load, while the Generation V trench process minimizes gate charge (Qg typically under 30 nC) to reduce switching losses at 300-500 kHz switching frequencies. Compared to using a Schottky diode, this dual N-channel SO-8 part saves roughly 1W at 5A, boosting overall converter efficiency by 2-3 percentage points in space-constrained VRM designs for laptops and embedded systems.
Рекомендуется
Notebook and Server VRM Power Rails
The IRF7313TRPBF's 30V VDS rating and dual-die SO-8 package make it well suited for low-voltage VRM (Voltage Regulator Module) rails in notebook and server motherboards. Each MOSFET handles up to 6.5A continuous drain current, allowing a single IRF7313 to deliver more than 10A when both channels parallel into a common copper pour. Its 1.0V-2.5V VGS(th) range is compatible with standard logic-level gate drivers from PWM controllers. Engineers frequently parallel the two internal dies to halve effective RDS(on) and share the 2W SO-8 power budget.
Рекомендуется
Battery Protection and Load Switching in Portable Devices
The IRF7313TRPBF integrates two independent N-channel MOSFETs in one SO-8 package, making it ideal for battery protection (disconnect switches) and load-side high-current switching in 2S/3S Li-ion powered devices. Each MOSFET rated at 30V VDS comfortably exceeds the 12.6V maximum voltage of a 3S Li-ion pack. The IR MOSFET Generation V process achieves low leakage current at zero gate drive, preserving battery life. Designers typically use one channel for charge-side disconnect and the other for discharge-side disconnect, saving PCB area versus two discrete SO-8 single MOSFETs.
Рекомендуется
Low-Voltage BLDC and Brushed Motor Half-Bridges
The IRF7313TRPBF functions as a complete half-bridge when its two N-channel MOSFETs are driven in complementary PWM patterns, ideal for small brushless DC (BLDC) fan or pump motors and brushed DC motor reverse-polarity H-bridges. Its avalanche rating protects against the inductive kickback that occurs when current is interrupted in the motor winding. The 6.5A continuous drain current per channel supports motors up to about 50W mechanical output at 24V. Compared to using discrete single MOSFETs, the dual SO-8 layout simplifies PCB routing for half-bridge gate drive and minimizes parasitic source inductance.
Рекомендуется
Secondary-Side Synchronous Rectifier in Isolated Power Supplies
The IRF7313TRPBF is commonly deployed as the secondary-side synchronous rectifier in 12V-output isolated flyback or forward converters for telecom and industrial auxiliary rails. With both internal MOSFETs wired in parallel, the effective RDS(on) drops to roughly 15 mOhm, allowing the part to handle more than 12A continuous with adequate PCB copper heatsinking on pins 5-8. The 30V VDS rating exceeds the 25V worst-case rectified secondary voltage at high line input. Generation V technology achieves gate charge low enough to support switching frequencies up to 500 kHz without excessive driver losses.
Рекомендуется
Automotive 12V/24V Load Switching and Lighting
The IRF7313TRPBF handles high-side and low-side load switching for automotive LED lighting, relay drivers, and accessory control modules operating from a 12V or 24V battery bus. Although the standard part is consumer-qualified, the IRF7313TRPBF's 30V VDS rating provides headroom for 24V truck bus transients up to 36V. For AEC-Q100-qualified designs, the Infineon AUIRF7313Q is the automotive-grade equivalent in the same SO-8 footprint. The dual-die SO-8 layout enables a single chip to drive two independent loads such as dual-zone LED drivers or mirror-control relays.
Рекомендуется
E-Fuse and Hot-Swap Controllers for Distributed Power
The IRF7313TRPBF's low on-resistance and fast switching make it a suitable pass-element for e-fuse and hot-swap controllers in distributed 12V power architectures. Each MOSFET's 29 mOhm RDS(on) limits steady-state voltage drop to less than 100 mV at 3A load, while the IR MOSFET process provides well-defined avalanche behavior for transient inrush events. The dual-die SO-8 outline allows two independent e-fuse channels on a single footprint, ideal for per-rail protection on PCIe cards, server backplanes, and PoE PD modules. Designers typically add a gate-source resistor to prevent dv/dt-induced turn-on during hot-plug events.
Рекомендуется
Industrial PLC Logic-Level Switching Relays
The IRF7313TRPBF drives low-power relays and solenoids in industrial PLC digital output modules, replacing bulky electromechanical components with solid-state switching. The VGS(th) of 1.0V to 2.5V allows direct logic-level drive from a 3.3V or 5V MCU GPIO without an additional gate driver stage. Each MOSFET's 6.5A current rating comfortably handles relay coil currents up to 4A, while the avalanche rating protects against inductive kickback from relay coil collapse when switching off. The dual-die SO-8 package provides two independent channels per footprint, doubling channel density per PLC module.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF7313TRPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF7313PBF | AUIRF7313Q | NTMFS4934N | Si4910DY |
|---|---|---|---|---|---|
| Package | SO-8 (8-pin SOIC) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Configuration | Dual N-Channel (independent) | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Drain-Source Voltage (VDS) max | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) | 6.5 A per channel | 6.5 A | 6.5 A | 7.4 A (+14%) | 6.0 A (-8%) |
| On-Resistance RDS(on) max | 29 mOhm @ VGS=10V | 29 mOhm | 29 mOhm | 24 mOhm (-17%) | 30 mOhm (+3%) |
| Power Dissipation (PD) | 2 W | 2 W | 2 W | 2.5 W | 2 W |
| Automotive Qualification | Consumer | Consumer | AEC-Q101 | Consumer/AEC-Q101 variants | Consumer |
| Technology | IR MOSFET Generation V | IR MOSFET Generation V | IR MOSFET Generation V | onsemi trench MOSFET | Vishay TrenchFET |
| Unit Price (qty 1, as of 2026-09-10) | $0.75 | ~$0.80 | ~$1.40 (automotive premium) | ~$0.85 | ~$0.95 |
Ключевые отличия
- Proven Generation V IR MOSFET process technology (против Si4910DY)
- Lower RDS(on) per channel than most cross-brand SO-8 alternatives (против NTMFS4934N)
- Automotive-grade drop-in variant available from same manufacturer (против Si4910DY)
- Dual independent N-channel MOSFETs in one SO-8 package (против IRF7389TR)
Заметки по проектированию
Solder the exposed drain tab (pins 5-6-7-8) to a continuous copper pour on the top or bottom PCB layer. A minimum 1 square inch (645 mm^2) copper area is required to keep junction temperature below 110C at 1A per channel, and 2 square inches is recommended for full 6.5A continuous operation per IRF7313 datasheet thermal curves. Use thermal vias under the SO-8 pad to pull heat down to internal copper planes. Without proper thermal management, the SO-8 will derate aggressively above 2W total dissipation.
Estimated: at 5A continuous per channel, power dissipation is roughly I^2 * RDS = 5^2 * 0.029 = 0.725W per channel, or 1.45W total at VGS=10V. With 2W SO-8 dissipation budget, this leaves margin only if junction-to-ambient thermal resistance theta_JA is below approximately 35 C/W (achievable with proper copper). For high-duty-cycle synchronous-rectifier operation, calculate worst-case DC dissipation using actual RMS current and verify that junction temperature stays below 125C derated for reliability. Always use derated power calculations rather than peak instantaneous values for thermal sizing.
Do not assume the two MOSFETs inside the IRF7313TRPBF share a common source or drain - they are independent N-channel dies with separate gate, source, and drain connections, and the drain tab (pins 5-8) is split between them. Check the SO-8 pinout diagram in the IRF7313 datasheet carefully: pins 1-3 belong to Q1 (gate/source) and pin 4 is Q2's gate; pins 5-6 are Q2's drain and pins 7-8 are Q1's drain. Wiring both drains together via the same copper pour is acceptable, but connecting both gates in parallel requires care to ensure both MOSFETs switch simultaneously.
Place gate drive traces as short and direct as possible, ideally over an uninterrupted reference plane, to minimize parasitic inductance that causes ringing and dv/dt-induced false turn-on. Add a 10k-100k ohm gate-source resistor on each gate to bleed off residual gate charge and prevent inadvertent turn-on during high dv/dt switching transitions. Source pins should be Kelvin-connected back to the gate driver ground reference rather than shared through the drain tab copper pour, which carries high switching current.
The IRF7313TRPBF's fast switching edges can produce high EMI if not managed. Place a small RC snubber (10 ohm + 1 nF) across each drain-source to slow the dv/dt, particularly in motor-drive and relay-driver applications. Use a gate resistor of 10-47 ohms in series with the gate drive to control di/dt. Layout matters more than component values: keep the switching current loop (drain to source return path) as small as physically possible to reduce radiated EMI from the SO-8 package.
Информация о соответствии
Pbf suffix in the MPN confirms lead-free plating compliant with RoHS. The IRF7313TRPBF is qualified to consumer market standards per the IR datasheet, not AEC-Q100. For AEC-Q100/AEC-Q101 automotive qualification, use the AUIRF7313Q variant in the same SO-8 footprint. Halogen-free status not explicitly stated in the provided data.
