IRFP4768PBF - 250V 93A N-Channel MOSFET TO-247AC | Infineon
Артикул: IRFP4768PBF ⚠ Последняя закупка| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $12.41 | $12,41 |
| 10 | $11.28 | $112,80 |
| 25 | $10.86 | $271,50 |
| 100 | $10.1 | $1.010,00 |
| 500 | $9.42 | $4.710,00 |
| 1.000 | $8.85 | $8.850,00 |
IRFP4768PBF Обзор
A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-to-source current through a gate-generated electric field. Within the power-electronics hierarchy, it serves as the fundamental switching element of DC-DC converters, motor drives, inverters, and switched-mode power supplies (SMPS), where it is preferred over bipolar transistors for its fast switching, low gate-drive power, and high efficiency.
Key features include the low RDS(on) of 17.5 mOhm, which minimizes conduction losses, and a total gate charge of 180 nC that supports efficient high-frequency switching. The device tolerates a gate-to-source voltage of plus/minus 20V, offers improved gate, avalanche, and dynamic dV/dt ruggedness, and is fully characterized for capacitance and avalanche SOA. The enhanced body diode dV/dt and di/dt capability reduce losses in bridge topologies.
Technically, the part belongs to the IR MOSFET HEXFET family using planar stripe geometry manufactured on Infineon's advanced power MOSFET process. The junction-to-case thermal resistance of 0.24 C/W enables the 520W rating with proper heatsinking, and the TO-24AC package allows direct mounting to a heat sink for high-power designs.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched and high-frequency circuits, DC-DC converters, motor control, power factor correction (PFC), and welding equipment. The 250V rating suits off-line and 48V-bus-derived systems with margin.
Design tip: drive the gate with 10-12V to fully enhance the channel and minimize RDS(on), use a gate resistor to control switching speed and EMI, and provide adequate heatsinking since the PbF package is RoHS-compliant and lead-free.
Аналоги без доработки для IRFP4768PBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
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IRFP4227PBF
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✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IRFP4768PBF Максимальные параметры и электрические характеристики
| Polarity | N-Channel |
| Drain-to-Source Breakdown Voltage (VDSS) | 250 V |
| Continuous Drain Current (ID) at Tc=25C | 93 A |
| RDS(on) Max | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | 520 W |
| Gate-to-Source Voltage Max (VGS) | +/-20 V |
| Total Gate Charge (Qg) | 180 nC |
| Gate Threshold Voltage (Vth) | 5 V |
| Thermal Resistance Junction-to-Case | 0.24 C/W |
| Корпус | TO-247AC |
| Тип монтажа | Through Hole |
| Technology | IR MOSFET (HEXFET) |
| Avalanche Ruggedness | Improved gate, avalanche and dynamic dV/dt ruggedness |
| Body Diode | Enhanced dV/dt and di/dt capability |
| Configuration | Single MOSFET |
| Статус RoHS | Compliant (PbF) |
| Lead Status | Lead-free |
Конфигурация выводов IRFP4768PBF
| Контакт 1 | Gate — Gate terminal - drive with 10-12V for full enhancement; abs max +/-20V |
| Контакт 2 | Drain — Drain terminal, also connected to the metal mounting tab |
| Контакт 3 | Source — Source terminal; body diode from source to drain |
Область безопасной работы (DC)
Типичное применение
IRFP4768PBF подходит для 6 применениеs: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), Motor Drives and Inverters, Power Factor Correction (PFC), DC-DC Converters, Welding Equipment.
Synchronous Rectification in SMPS
The IRFP4768PBF fits high-efficiency SMPS synchronous rectification because its 17.5 mOhm RDS(on) cuts conduction loss at high output current, and its enhanced body diode with improved dV/dt and di/dt ruggedness absorbs reverse-recovery stress in buck-derived topologies. Placed as the rectifier element replacing a Schottky diode, it operates at 10-12V gate drive for full enhancement, with 180 nC gate charge setting the driver current requirement. Compared with diode rectification, this typically improves converter efficiency by several percentage points at 48V-output server and telecom power levels.
Рекомендуется
Uninterruptible Power Supply (UPS)
In UPS output stages and battery converters, the IRFP4768PBF provides 250V VDSS for bus margin and 93A continuous current for inverter output stages. The improved avalanche and dynamic dV/dt ruggedness helps it survive inductive-load switching transients typical of line-interactive and double-conversion UPS designs. Mounted on a heatsink via the TO-247AC tab with 0.24 C/W junction-to-case thermal resistance, it handles the 520W dissipation envelope at Tc=25C, enabling compact high-power inverter bridges.
Рекомендуется
Motor Drives and Inverters
The IRFP4768PBF serves DC bus voltages up to 250V in industrial motor drives and inverters, where its 93A rating and 17.5 mOhm RDS(on) minimize loss during heavy-load operation. The fully characterized avalanche SOA supports hard-switched PWM bridges, and the enhanced body diode handles freewheeling current in half-bridge configurations. A gate resistor of 4.7 to 22 Ohm controls switching speed and EMI. Per VBsemi application guidance, the domestic alternative VBGP1252N offers 16 mOhm and 100A for higher-efficiency, higher-density drive designs.
Рекомендуется
Power Factor Correction (PFC)
In boost-PFC front ends of industrial power supplies, the IRFP4768PBF operates from rectified mains up to approximately 400V bus where the 250V class suits half-bridge and lower-bus PFC stages or stage-1 converters on 200V-class systems. Its 180 nC gate charge enables switching at 50-150 kHz with a strong driver, while low RDS(on) limits conduction loss at peak inductor current. The improved gate and avalanche ruggedness, per Infineon datasheet PD-97379, supports the hard-switched turn-off events inherent to boost PFC under line-transient conditions.
Рекомендуется
DC-DC Converters
High-current isolated and non-isolated DC-DC converters use the IRFP4768PBF as the primary switching element where 250V standoff covers off-line-derived intermediate bus architectures. The 17.5 mOhm RDS(on) minimizes loss in full-bridge and push-pull primaries, and the fast body diode reduces dead-time losses. Because it is a through-hole TO-247AC device, prototyping is straightforward and thermal interfaces are easily serviced. Designers should verify 10-12V gate drive to hold RDS(on) at its specified maximum under all load and temperature conditions.
Рекомендуется
Welding Equipment
Inverter-based welding power sources demand high peak current and rugged switching devices; the IRFP4768PBF delivers 93A continuous rating, 520W dissipation capability, and improved avalanche energy ruggedness suited to arc-load transients. The fully characterized avalanche SOA in the Infineon datasheet lets designers validate clamp-less operation margins. Paralleling multiple TO-247AC devices is common for output rectification and primary bridges; layout symmetry and individual gate resistors prevent current-hogging. The through-hole package simplifies field service in industrial welding environments.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRFP4768PBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRFP4868PBFXKMA1 | IRFP4768 | IRFP4227PBF | VBGP1252N |
|---|---|---|---|---|---|
| Package | TO-247AC | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247-3 - compatible |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Will Semiconductor |
| VDSS | 250 V | 250 V (verify new datasheet) | 250 V | 200 V | 250 V |
| RoHS / Lead-Free | Yes (PbF) | Yes | No (non-PbF) | Yes (PbF) | Yes |
Ключевые отличия
- Low conduction loss at 250V class (против IRFP4227PBF)
- Improved ruggedness features (против IRFP4768 (non-PbF))
- Domestic alternative with higher ratings (против VBGP1252N)
Заметки по проектированию
The IRFP4768PBF is rated 520W at Tc=25C, but that assumes an ideal infinite heatsink. Real designs must budget the case-to-ambient path: with 0.24 C/W junction-to-case, a 30W dissipation raises the junction only about 7C above the case, so heatsink selection dominates. Use thermal grease or a phase-change pad on the TO-247AC tab and verify case temperature under worst-case load; keep junction below 150C with margin.
Drive the gate with 10-12V to fully enhance the channel and achieve the 17.5 mOhm RDS(on) maximum. At 180 nC total gate charge, driver peak current sets switching time: a 2A driver switches in roughly 90 ns. Use a gate resistor (typically 4.7 to 22 Ohm) to damp ringing and control EMI; split resistors for turn-on/turn-off can independently optimize efficiency and spike suppression.
The part is being discontinued under Infineon notice PD_358_25 with IRFP4868PBFXKMA1 as the recommended replacement. Do not start new designs on IRFP4768PBF without a second-source plan. Also note IRFP4768 (non-PbF) is not RoHS-compliant for new products. Verify the replacement datasheet values for VDSS, RDS(on), and gate charge before releasing the BOM change.
Информация о соответствии
PbF suffix denotes lead-free, RoHS-compliant terminal finish. Not an automotive AEC-Q100 part. REACH/halogen status not stated in provided data.
