IRFP4768PBF - 250V 93A N-Channel MOSFET | Infineon
MPN: IRFP4768PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.42 | $8.42 |
| 10 | $7.58 | $75.80 |
| 100 | $6.74 | $674.00 |
| 500 | $5.91 | $2,955.00 |
| 1,000 | $5.07 | $5,070.00 |
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IRFP4768PBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 250 V |
| Continuous Drain Current (ID) | 93 A (Tc=25°C) |
| Drain-Source On-State Resistance (RDS(on)) | 17.5 mΩ max |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 180 nC |
| Power Dissipation (PD) | 520 W (Tc=25°C) |
| Package | TO-247AC |
| Mounting Type | Through Hole |
| Technology | IR MOSFET™ |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.24 °C/W |
| Operating Temperature Range | -55°C to +175°C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Gate Threshold Voltage (VGS(th)) | 5 V (typical) |
IRFP4768PBF Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain connection |
| Pin 3 | Source — Source connection |
Safe Operating Area
Typical Applications
IRFP4768PBF is suitable for 6 applications: Synchronous Rectification in SMPS, DC-DC Converters, Motor Drives, Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), Welding Equipment.
Synchronous Rectification in SMPS
The IRFP4768PBF is ideal for synchronous rectification in switched-mode power supplies due to its low RDS(on) of 17.5mΩ, which minimizes conduction losses. Its 250V drain-source voltage rating allows it to handle the high voltage stresses in rectifier circuits. The fast switching speed and low gate charge (180nC) enable efficient operation at high frequencies, improving overall power supply efficiency. In a typical SMPS, the MOSFET replaces a Schottky diode, reducing forward voltage drop and increasing efficiency by 2-5%. The TO-247AC package ensures adequate heat dissipation, making it suitable for power supplies up to 1kW.
Recommended
DC-DC Converters
In DC-DC converters, the IRFP4768PBF serves as a high-side or low-side switch. Its 250V breakdown voltage is suitable for 48V input converters, while the 93A current rating supports high-power outputs. The low RDS(on) reduces conduction losses, and the fast switching characteristics minimize switching losses, enabling high conversion efficiency. The device's robust thermal performance allows continuous operation at high power levels. For example, in a 48V to 12V buck converter, the IRFP4768PBF can handle output currents up to 90A with proper heatsinking. Its compatibility with standard gate drivers simplifies circuit design.
Recommended
Motor Drives
The IRFP4768PBF is well-suited for motor drive applications, including brushless DC (BLDC) motors and industrial AC drives. Its high current rating (93A) and voltage rating (250V) make it capable of driving motors in the 1-5kW range. The low RDS(on) reduces heat generation, and the fast switching speed enables efficient PWM control. In a three-phase inverter, the MOSFET's body diode provides freewheeling current path, and its fast reverse recovery reduces switching losses. The TO-247AC package allows for easy mounting on heatsinks, ensuring reliable operation in harsh industrial environments.
Recommended
Uninterruptible Power Supplies (UPS)
In UPS systems, the IRFP4768PBF is used in inverter and battery charger stages. Its 250V rating is suitable for 120V/230V AC systems, and the 93A current capability supports high-power inverters. The low RDS(on) improves efficiency, reducing energy losses and heat generation. The device's ruggedness ensures reliable operation during load transients and battery charging. In a typical UPS inverter, the MOSFET switches at 20kHz, and its fast switching speed minimizes losses. The TO-247AC package allows for efficient cooling, ensuring long-term reliability in continuous operation.
Recommended
Power Factor Correction (PFC)
The IRFP4768PBF is an excellent choice for power factor correction circuits, where high voltage and current handling are required. Its 250V rating is suitable for boost converters operating from 120V/230V AC mains. The low RDS(on) reduces conduction losses, and the fast switching speed enables high-frequency operation, reducing the size of magnetic components. In a typical PFC boost converter, the MOSFET operates at 100kHz, and its low gate charge (180nC) simplifies gate drive design. The device's high power dissipation capability (520W) ensures reliable operation under high load conditions.
Recommended
Welding Equipment
In welding equipment, the IRFP4768PBF is used in the inverter stage to convert DC to high-frequency AC. Its high current (93A) and voltage (250V) ratings make it suitable for welding machines with output currents up to 200A. The low RDS(on) reduces power losses, and the fast switching speed enables high-frequency operation, reducing transformer size. The device's ruggedness ensures reliable operation in harsh environments with high vibration and temperature. The TO-247AC package allows for efficient heatsinking, ensuring continuous operation during heavy welding tasks.
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Recommended Products Summary
Engineering reference data for IRFP4768PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFP4868PBF | IRFP4768 | IRFP4468PBF |
|---|---|---|---|---|
| Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Breakdown Voltage | 250 V | 300 V | 250 V | 100 V |
| Continuous Drain Current | 93 A | 70 A | 93 A | 195 A |
| RDS(on) Max | 17.5 mΩ | 25 mΩ | 17.5 mΩ | 2.6 mΩ |
| Total Gate Charge | 180 nC | 150 nC | 180 nC | 360 nC |
| Power Dissipation | 520 W | 520 W | 520 W | 520 W |
| Gate Threshold Voltage | 5 V | 5 V | 5 V | 5 V |
Key Differentiators
- Lower RDS(on) compared to IRFP4868PBF (vs IRFP4868PBF)
- Higher current rating than IRFP4868PBF (vs IRFP4868PBF)
- Lead-free version available (vs IRFP4768)
Design Notes
The IRFP4768PBF can dissipate up to 520W at Tc=25°C, but this requires an effective heatsink. The thermal resistance junction-to-case is 0.24°C/W, so with a heatsink of 0.5°C/W, the total thermal resistance is 0.74°C/W. At 200W dissipation, the junction temperature rise would be 148°C, which is close to the maximum rating. Ensure adequate airflow or a larger heatsink for continuous high-power operation.
For through-hole TO-247AC packages, ensure the leads are soldered properly and the tab is connected to the heatsink with thermal compound. Use a low-inductance gate drive layout to minimize ringing. Place a gate resistor (typically 10Ω) close to the gate pin to dampen oscillations. Keep the source connection short to reduce common-source inductance.
Do not exceed the maximum gate-to-source voltage of ±20V, as this can damage the gate oxide. Ensure the gate drive voltage is at least 10V to achieve the specified RDS(on). Also, be aware of the body diode's reverse recovery characteristics; in bridge topologies, consider using a Schottky diode in parallel if needed. Always operate within the SOA to avoid thermal runaway.
Compliance Information
RoHS compliant and lead-free per Infineon datasheet. Not AEC-Q100 qualified; for automotive use, contact Infineon for approval.
